BLL6G1214L-250;
BLL6G1214LS-250
LDMOS L-band radar power transistor
Rev. 2 — 24 June 2013
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to
1.4 GHz range.
Table 1.
Test information
Typical RF performance at T
case
= 25
C; t
p
= 1 ms;
= 10 %; I
Dq
= 150 mA; in a class-AB
production test circuit.
Test signal
pulsed RF
f
(GHz)
1.2 to 1.4
V
DS
(V)
36
P
L
(W)
250
G
p
(dB)
15
D
(%)
45
t
r
(ns)
15
t
f
(ns)
5
1.2 Features and benefits
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1.2 GHz to 1.4 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency
range
NXP Semiconductors
BLL6G1214L(S)-250
LDMOS L-band radar power transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLL6G1214L-250 (SOT502A)
1
3
2
2
3
sym112
1
BLL6G1214LS-250 (SOT502B)
1
2
3
drain
gate
source
[1]
1
3
2
2
1
3
sym112
[1]
Connected to flange
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLL6G1214L-250
BLL6G1214LS-250
-
-
flanged ceramic package; 2 mounting holes; 2 leads
earless flanged ceramic package; 2 leads
Version
SOT502A
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
-
Max
89
+11
+150
200
Unit
V
V
C
C
BLL6G1214L-250_1214LS-250
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 24 June 2013
2 of 15
NXP Semiconductors
BLL6G1214L(S)-250
LDMOS L-band radar power transistor
5. Thermal characteristics
Table 5.
Symbol
R
th(j-case)
Z
th(j-c)
Thermal characteristics
Parameter
thermal resistance from
junction to case
transient thermal impedance
from junction to case
Conditions
T
case
= 85
C;
P
L
= 250 W
T
case
= 85
C;
P
L
= 250 W
t
p
= 1000
s;
= 10 %
t
p
= 100
s;
= 10 %
t
p
= 200
s;
= 10 %
t
p
= 300
s;
= 10 %
t
p
= 100
s;
= 20 %
[1]
[1]
Typ
0.244
Unit
K/W
0.124
0.059
0.077
0.088
0.078
K/W
K/W
K/W
K/W
K/W
Z
th(j-c)
values are calculated from results obtained with ANSYS simulations and confirmed with
IR measurements during development stage. During production: guaranteed by design.
6. Characteristics
Table 6.
DC Characteristics
T
j
= 25
C
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 20 V; I
D
= 336 mA
V
GS
= 0 V; V
DS
= 42 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 336 mA
Min
91.5
1.4
-
50
-
51.6
-
Typ
-
1.9
-
59
-
-
-
Max
2.4
4.2
-
420
-
127
Unit
V
A
A
nA
mS
m
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 3.36 mA
105.5 V
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 11.7 A
Table 7.
AC Characteristics
T
j
= 25
C
Symbol Parameter
C
iss
C
oss
C
rss
input capacitance
output capacitance
Conditions
V
GS
= 0 V; V
DS
= 40 V; f = 1 MHz
V
GS
= 0 V; V
DS
= 40 V; f = 1 MHz
Min Typ Max Unit
-
-
-
285 -
90
3
-
-
pF
pF
pF
reverse transfer capacitance V
GS
= 0 V; V
DS
= 40 V; f = 1 MHz
Table 8.
RF characteristics
Test signal: pulsed RF; t
p
= 1 ms;
= 10 %; RF performance at V
DS
= 36 V; I
Dq
= 150 mA;
T
case
= 25
C; unless otherwise specified, in a class-AB production test circuit.
Symbol
P
L
f
range
t
p
Parameter
output power
frequency range
pulse duration
= 10 %
= 20 %
BLL6G1214L-250_1214LS-250
All information provided in this document is subject to legal disclaimers.
Conditions
Min
250
-
-
Typ Max
-
-
-
-
1
100
Unit
W
ms
s
1200 -
1400 MHz
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 24 June 2013
3 of 15
NXP Semiconductors
BLL6G1214L(S)-250
LDMOS L-band radar power transistor
Table 8.
RF characteristics
…continued
Test signal: pulsed RF; t
p
= 1 ms;
= 10 %; RF performance at V
DS
= 36 V; I
Dq
= 150 mA;
T
case
= 25
C; unless otherwise specified, in a class-AB production test circuit.
Symbol
D
t
r
t
f
G
p
RL
in
[1]
Parameter
drain efficiency
rise time
fall time
power gain
input return loss
Conditions
P
L
= 250 W
P
L
= 250 W
[1]
[1]
Min
42
-
-
13
-
-
Typ Max
45
-
-
15
-
-
-
200
200
-
0.6
7
Unit
%
ns
ns
dB
dB
dB
P
droop(pulse)
pulse droop power
The rise and fall time of the input circuit will be 5 ns maximum.
7. Test information
7.1 Ruggedness in class-AB operation
The BLL6G1214L-250 and BLL6G1214LS-250 are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
DS
= 36 V; I
Dq
= 150 mA; P
L
= 250 W; t
p
= 1 ms;
= 10 %.
7.2 Impedance information
Table 9.
Typical impedance
Typical values unless otherwise specified.
f
GHz
1.2
1.3
1.4
Z
S
1.077
j2.78
1.352
j2.949
1.881
j2.640
Z
L
1.288
j1.014
1.139
j1.086
1.038
j1.132
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
BLL6G1214L-250_1214LS-250
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 24 June 2013
4 of 15
NXP Semiconductors
BLL6G1214L(S)-250
LDMOS L-band radar power transistor
7.3 Circuit information
Printed-Circuit Board (PCB): Duroid 6010;
r
= 10.15; thickness = 0.64 mm;
thickness copper plating = 35
m.
See
Table 10
for a list of components.
Fig 2.
Component layout for application circuit
Table 10. List of components
For test circuit see
Figure 2.
Component
C1, C2, C3, C4, C7
C5, C8
C6, C9
C10
C11
R1
[1]
[2]
[3]
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
resistor
Value
56 pF
200 pF
1 nF
10
F,
20 V
22
F,
63 V
10
[1]
[2]
[3]
Remarks
SMD 0603
American Technical Ceramics type 100A or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
American Technical Ceramics type 700A or capacitor of same quality.
BLL6G1214L-250_1214LS-250
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 24 June 2013
5 of 15
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