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BD441

Description
Bipolar Transistors - BJT 4A 80V 36W NPN
CategoryDiscrete semiconductor    The transistor   
File Size70KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BD441 Overview

Bipolar Transistors - BJT 4A 80V 36W NPN

BD441 Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Contains lead
MakerON Semiconductor
package instructionPLASTIC, CASE 77-09, 3 PIN
Contacts3
Manufacturer packaging code77-09
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)4 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-225AA
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)240
Polarity/channel typeNPN
Maximum power dissipation(Abs)36 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
BD435G, BD437G, BD439G,
BD441G
Plastic Medium-Power
Silicon NPN Transistors
This series of plastic, medium−power silicon NPN transistors can be
used for amplifier and switching applications.
Features
http://onsemi.com
Complementary Types are BD438 and BD442
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
BD435G
BD437G
BD439G
BD441G
Collector−Base Voltage
BD435G
BD437G
BD439G
BD441G
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
32
45
60
80
V
CBO
32
45
60
80
V
EBO
I
C
I
B
P
D
36
288
T
J
, T
stg
– 55 to + 150
W
W/°C
°C
5.0
4.0
1.0
Vdc
Adc
Adc
Vdc
Value
Unit
Vdc
4.0 AMPERES
POWER TRANSISTORS
NPN SILICON
COLLECTOR 2, 4
BASE 3
EMITTER 1
TO−225
CASE 77−09
STYLE 1
1 2
3
MARKING DIAGRAM
YWW
BD4xxG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
3.5
Unit
°C/W
Y
WW
BD4xx
G
= Year
= Work Week
= Device Code
xx = 35, 37, 37T, 39, 41
= Pb−Free Package
ORDERING INFORMATION
Device
BD435G
BD437G
BD437TG
BD439G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
BD441G
Package
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
Shipping
500 Units/Box
500 Units/Box
50 Units/Rail
500 Units/Box
500 Units/Box
©
Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 17
Publication Order Number:
BD437/D

BD441 Related Products

BD441 BD439 BD437T BD437
Description Bipolar Transistors - BJT 4A 80V 36W NPN Bipolar Transistors - BJT 4A 60V 36W NPN Bipolar Transistors - BJT 4A 45V 36W NPN Bipolar Transistors - BJT 4A 45V 36W NPN
package instruction PLASTIC, CASE 77-09, 3 PIN PLASTIC, CASE 77-09, 3 PIN PLASTIC, CASE 77-09, 3 PIN PLASTIC, CASE 77-09, 3 PIN
Contacts 3 3 3 3
Manufacturer packaging code 77-09 77-09 CASE 77-09 77-09
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 4 A 4 A 4 A 4 A
Collector-emitter maximum voltage 80 V 60 V 45 V 45 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 15 25 40 40
JEDEC-95 code TO-225AA TO-225AA TO-225AA TO-126
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0 e0 e0
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) 240 240 240 NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 36 W 36 W 36 W 36 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 30 30 30 NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 3 MHz 3 MHz 3 MHz 2 MHz
Brand Name ON Semiconductor ON Semiconductor - ON Semiconductor
Is it lead-free? Contains lead Contains lead - Contains lead
Maker ON Semiconductor ON Semiconductor - ON Semiconductor
transistor applications SWITCHING SWITCHING SWITCHING -

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