Ordering number : EN6561C
5LN01S
N-Channel Small Signal MOSFET
50V, 0.1A, 7.8
Ω
, Single SMCP
Features
•
•
•
http://onsemi.com
Low ON-resistance
Ultrahigh-speed switching
1.5V drive
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
Conditions
Ratings
50
±10
0.1
0.4
0.15
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
*
Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7027-004
5LN01S-TL-E
0.4
0.3
Ordering & Package Information
Device
5LN01S-TL-E
Package
SMCP
SC-75, SOT-416
Shipping
3,000pcs./reel
memo
Pb-Free
0.4
0.2
1.6
0.8
Packing Type: TL
Marking
1
2
1.6
0.5 0.5
LOT No.
LOT No.
3
TL
YB
0 to 0.1
0.1 MIN
1 : Gate
2 : Source
3 : Drain
SMCP
0.75
0.6
0.1
Electrical Connection
3
1
2
Semiconductor Components Industries, LLC, 2013
July, 2013
71713 TKIM TC-00002957/62712 TKIM/41006PE MSIM TB-00002188/ No.6561-1/6
81000 TS(KOTO) TA-2049
5LN01S
Electrical Characteristics
at Ta=25°C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=100mA, VGS=0V
VDS=10V, VGS=10V, ID=100mA
See specified Test Circuit.
VDS=10V, f=1MHz
Conditions
ID=1mA, VGS=0V
VDS=50V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=100μA
VDS=10V, ID=50mA
ID=50mA, VGS=4V
ID=30mA, VGS=2.5V
ID=10mA, VGS=1.5V
0.4
0.13
0.18
6
7.1
10
6.6
4.7
1.7
18
42
190
105
1.57
0.20
0.32
0.85
1.2
7.8
9.9
20
Ratings
min
50
1
±10
1.3
typ
max
Unit
V
μA
μA
V
S
Ω
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
VIN
VIN
D
G
5LN01S
P.G
50Ω
S
VDD=25V
ID=50mA
RL=500Ω
VOUT
4V
0V
PW=10μs
D.C.≤1%
No.6561-2/6
5LN01S
0.10
0.09
0.08
ID -- VDS
3.5V
4.0V
0.20
ID -- VGS
VDS=10V
C
2.0
0.16
Ta=
--25
°
C
V
2.0
Drain Current, ID -- A
VGS=1.5V
0.18
Drain Current, ID -- A
0.07
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
6.0
V
0.06
0.05
0.04
0.03
0.02
0.01
0
0
0.2
0.4
0.6
0.8
1.0
IT00054
100
7
0
0.5
1.0
1.5
75
°
C
25
°
2.5
3.0
IT00055
Drain to Source Voltage, VDS -- V
12
RDS(on) -- VGS
Gate to Source Voltage, VGS -- V
RDS(on) -- ID
Ta=25°C
Static Drain to Source
On-State Resistance, RDS(on) --
Ω
VGS=4V
Static Drain to Source
On-State Resistance, RDS(on) --
Ω
11
10
9
8
7
6
5
4
3
2
0
1
2
3
4
5
6
7
8
9
10
5
3
2
50mA
ID=30mA
10
7
5
3
2
Ta=75°C
25°C
--25°C
1.0
0.01
2
3
5
7
0.1
2
3
Gate to Source Voltage, VGS -- V
100
7
IT00056
100
7
RDS(on) -- ID
Drain Current, ID -- A
IT00057
RDS(on) -- ID
VGS=2.5V
Static Drain to Source
On-State Resistance, RDS(on) --
Ω
VGS=1.5V
Static Drain to Source
On-State Resistance, RDS(on) --
Ω
5
3
2
5
3
2
10
7
5
3
2
Ta=75°C
25°C
--25°C
10
7
5
3
2
Ta=75°C
25°C
--25°C
1.0
0.01
2
3
5
7
0.1
2
3
1.0
0.001
2
3
5
7
0.01
2
3
IT00059
Drain Current, ID -- A
14
IT00058
1.0
RDS(on) -- Ta
Drain Current, ID -- A
|
y
fs
|
-- ID
12
Forward Transfer Admittance,
|
yfs
|
-- S
7
5
3
2
VDS=10V
Static Drain to Source
On-State Resistance, RDS(on) --
Ω
10
8
6
.5V
=2
V GS
.0V
4
A,
0m
S=
=3
, VG
ID
mA
=50
ID
-25
°
C
Ta= -
75
°
C
25
°
C
0.1
7
5
3
2
0.01
0.01
4
2
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
2
3
5
7
0.1
2
3
Ambient Temperature, Ta --
°C
IT00060
Drain Current, ID -- A
IT00061
No.6561-3/6
5LN01S
3
2
IS -- VSD
VGS=0V
Switching Time, SW Time -- ns
1000
7
5
3
2
SW Time -- ID
VDD=25V
VGS=4V
Source Current, IS -- A
0.1
td(off)
tf
7
5
Ta=
75
°
C
25
°
C
--25
°
C
100
7
5
3
2
3
2
tr
td(on)
0.01
0.5
0.6
0.7
0.8
0.9
1.0
1.1
IT00062
10
0.01
2
3
5
7
Diode Forward Voltage, VSD -- V
100
7
5
Ciss, Coss, Crss -- VDS
f=1MHz
Gate-to-Sourse Voltage, VGS -- V
Drain Current, ID -- A
10
9
8
7
6
5
4
3
2
1
0.1
IT00063
VGS -- Qg
VDS=10V
ID=100mA
Ciss, Coss, Crss -- pF
3
2
10
7
5
3
2
Ciss
Coss
Crss
1.0
0
5
10
15
20
25
30
35
40
45
50
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Drain to Source Voltage, VDS -- V
0.20
IT00064
Total Gate Charge, Qg -- nC
IT00065
PD -- Ta
Allowable Power Dissipation, PD -- W
0.15
0.10
0.05
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT01961
No.6561-4/6
5LN01S
Outline Drawing
5LN01S-TL-E
Mass (g) Unit
0.003 mm
* For reference
Land Pattern Example
Unit: mm
0.7
0.7
0.6
0.5
0.5
0.7
1.3
No.6561-5/6
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