BLF8G24LS-100V;
BLF8G24LS-100GV
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 2300 MHz to 2400 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
2300 to 2400
I
Dq
(mA)
900
V
DS
(V)
28
P
L(AV)
(W)
25
G
p
(dB)
19
D
(%)
32
ACPR
5M
(dBc)
29
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier;
5 MHz carrier spacing.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Decoupling leads to enable improved video bandwidth (90 MHz typical)
Designed for broadband operation (2300 MHz to 2400 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the
2300 MHz to 2400 MHz frequency range
BLF8G24LS-100(G)V
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
1
2
3
4
5
6
7
[1]
Pinning
Description
drain
gate
source
decoupling lead
decoupling lead
n.c.
n.c.
drain
gate
source
decoupling lead
decoupling lead
n.c.
n.c.
6
2
3
7
[1]
[1]
Simplified outline
Graphic symbol
BLF8G24LS-100V (SOT1244B)
4
1
5
6,7
2
1
4,5
3
3
aaa-003619
6
2
7
BLF8G24LS-100GV (SOT1244C)
4
1
5
1
6,7
2
3
aaa-003619
4,5
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLF8G24LS-100V
BLF8G24LS-100GV
-
-
Description
earless flanged ceramic package; 6 leads
earless flanged ceramic package; 6 leads
Version
SOT1244B
SOT1244C
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
[1]
Max
65
+13
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
BLF8G24LS-100V_24LS-100GV#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
2 of 17
BLF8G24LS-100(G)V
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 48 W
Typ
0.29
Unit
K/W
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
V
GS
= 0 V; I
D
= 1 mA
V
DS
= 10 V; I
D
= 153 mA
V
DS
= 28 V; I
D
= 900 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 153 mA
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 5.35 A
Min
65
1.5
1.6
-
-
-
-
-
Typ
-
1.9
2
-
29
-
1.27
0.1
Max Unit
-
2.3
2.4
4.2
-
420
-
-
V
V
V
A
A
nA
S
Table 7.
RF characteristics
Test signal: 2-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability
on the CCDF; f
1
= 2302.5 MHz; f
2
= 2307.5 MHz; f
3
= 2392.5 MHz; f
4
= 2397.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 900 mA; T
case
= 25
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol
G
p
D
RL
in
ACPR
5M
Parameter
power gain
drain efficiency
input return loss
adjacent channel power ratio (5 MHz)
Conditions
P
L(AV)
= 25 W
P
L(AV)
= 25 W
P
L(AV)
= 25 W
P
L(AV)
= 25 W
Min
18
29
-
-
Typ
19
32
17
29
Max
-
-
7
25
Unit
dB
%
dB
dBc
7. Test information
7.1 Ruggedness in class-AB operation
The BLF8G24LS-100V and BLF8G24LS-100GV are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
DS
= 28 V; I
Dq
= 900 mA; P
L
= 100 W; f = 2300 MHz.
BLF8G24LS-100V_24LS-100GV#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
3 of 17
BLF8G24LS-100(G)V
Power LDMOS transistor
7.2 Impedance information
Table 8.
Typical impedance
Measured load-pull data; I
Dq
= 900 mA; V
DS
= 28 V.
f
(MHz)
BLF8G24LS-100V
2300
2400
2500
BLF8G24LS-100GV
2300
2400
2500
[1]
Z
S
and Z
L
defined in
Figure 1.
Z
S
[1]
()
1.52
j4.32
2.54
j5.05
4.83
j5.28
1.60
j5.88
2.53
j6.66
4.53
j7.28
Z
L
[1]
()
1.96
j2.21
1.83
j2.03
1.76
j2.23
1.96
j4.12
1.81
j4.12
1.74
j4.33
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
BLF8G24LS-100V_24LS-100GV#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
4 of 17
BLF8G24LS-100(G)V
Power LDMOS transistor
7.3 VBW in a class-AB operation
The BLF8G24LS-100V and BLF8G24LS-100GV show 90 MHz (typical) video bandwidth
(IMD third-order intermodulation inflection point) in a class-AB test circuit in the 2.3 GHz to
2.4 GHz band at V
DS
= 28 V and I
Dq
= 0.9 A.
aaa-010683
-10
IMD
(dBc)
-20
IMD3
-30
IMD5
-40
(1)
(2)
(1)
(2)
-50
IMD7
(1)
(2)
-60
-70
1
10
carrier spacing (MHz)
10
2
V
DS
= 28 V; I
Dq
= 900 mA; f
c
= 2350 MHz.
(1) low
(2) high
Fig 2.
VBW capacity in class-AB test circuit
BLF8G24LS-100V_24LS-100GV#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
5 of 17
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