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SPP16N50C3HKSA1

Description
MOSFET Order Manufacturer Part Number SPP16N50C3
CategoryDiscrete semiconductor    The transistor   
File Size720KB,14 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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SPP16N50C3HKSA1 Overview

MOSFET Order Manufacturer Part Number SPP16N50C3

SPP16N50C3HKSA1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
Objectid1299749829
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
Factory Lead Time1 week
compound_id153826402
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)460 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)16 A
Maximum drain-source on-resistance0.28 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)48 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
SPP16N50C3
SPI16N50C3, SPA16N50C3
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Improved transconductance
P-TO220-3-31
1
2
3
V
DS
@
T
jmax
R
DS(on)
I
D
PG-TO220FP
PG-TO262
560
0.28
16
PG-TO220
2
V
A
1
23
P-TO220-3-1
PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
Type
SPP16N50C3
SPI16N50C3
Package
PG-TO220
Ordering Code
Q67040-S4583
Marking
16N50C3
16N50C3
16N50C3
PG-TO262
PG-TO220FP
Q67040-S4582
SP000216351
SPA16N50C3
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
SPP_I
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
I
D
A
16
10
16
1)
10
1)
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
=8,
V
DD
=50V
I
D puls
48
48
A
E
AS
460
460
mJ
Avalanche energy, repetitive
t
AR
limited by
T
jmax
2)
I
D
=16A,
V
DD
=50V
E
AR
I
AR
0.64
16
0.64
16
A
Avalanche current, repetitive
t
AR
limited by
T
jmax
Gate source voltage
V
GS
±20
±
30
±20
±
30
V
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
V
GS
P
tot
160
34
W
Operating and storage temperature
Reverse diode dv/dt
6)
T
j ,
T
stg
dv/dt
-55...+150
15
°C
V/ns
Rev.
3.2
p
age 1
2009-12-22

SPP16N50C3HKSA1 Related Products

SPP16N50C3HKSA1 SPP16N50C3XKSA1 SPA16N50C3XKSA1 SPI16N50C3XKSA1 SPI16N50C3HKSA1 SPA16N50C3
Description MOSFET Order Manufacturer Part Number SPP16N50C3 MOSFET N-Ch 560V 16A TO220-3 MOSFET LOW POWER_LEGACY MOSFET N-Ch 560V 16A I2PAK-3 MOSFET N-CH 560V 16A TO-262 Drain-source voltage (Vdss): 560V Continuous drain current (Id) (at 25°C): 16A (Tc) Gate-source threshold voltage: 3.9V @ 675uA Drain-source on-resistance: 280mΩ @ 10A, 10V Maximum power consumption Dispersed (Ta=25°C): 34W (Tc) Type: N channel N channel, 560V, 16A, 0.28Ω@10V
Configuration SINGLE WITH BUILT-IN DIODE Single SINGLE WITH BUILT-IN DIODE Single SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Is it lead-free? Lead free - Lead free - Lead free Lead free
Is it Rohs certified? conform to - conform to - conform to conform to
Maker Infineon - Infineon - Infineon Infineon
Parts packaging code TO-220AB - TO-220AB - TO-262AA TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 - FLANGE MOUNT, R-PSFM-T3 - IN-LINE, R-PSIP-T3 GREEN, PLASTIC, TO-220FP, 3 PIN
Contacts 3 - 3 - 3 3
Reach Compliance Code compliant - compliant - compliant compliant
Other features AVALANCHE RATED - AVALANCHE RATED - AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 460 mJ - 460 mJ - 460 mJ 460 mJ
Minimum drain-source breakdown voltage 500 V - 500 V - 500 V 500 V
Maximum drain current (ID) 16 A - 16 A - 16 A 16 A
Maximum drain-source on-resistance 0.28 Ω - 0.28 Ω - 0.28 Ω 0.28 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB - TO-220AB - TO-262AA TO-220AB
JESD-30 code R-PSFM-T3 - R-PSFM-T3 - R-PSIP-T3 R-PSFM-T3
Number of components 1 - 1 - 1 1
Number of terminals 3 - 3 - 3 3
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C - 150 °C - 150 °C 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR - RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT - FLANGE MOUNT - IN-LINE FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL - N-CHANNEL - N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 48 A - 48 A - 48 A 48 A
Certification status Not Qualified - Not Qualified - Not Qualified Not Qualified
surface mount NO - NO - NO NO
Terminal form THROUGH-HOLE - THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE - SINGLE - SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING - SWITCHING - SWITCHING SWITCHING
Transistor component materials SILICON - SILICON - SILICON SILICON
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