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IPB80N06S2L11

Description
MOSFET MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size131KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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IPB80N06S2L11 Overview

MOSFET MOSFET

IPB80N06S2L11 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryMOSFET
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-263-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage55 V
Id - Continuous Drain Current80 A
Rds On - Drain-Source Resistance10.7 mOhms
Vgs - Gate-Source Voltage20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationSingle
Pd - Power Dissipation158 W
Channel ModeEnhancement
PackagingReel
Height4.4 mm
Length10 mm
Transistor Type1 N-Channel
Width9.25 mm
Fall Time13 ns
Rise Time32 ns
Typical Turn-Off Delay Time46 ns
Typical Turn-On Delay Time11 ns
Unit Weight0.079014 oz
IPB80N06S2L-11
IPP80N06S2L-11, IPI80N06S2L-11
OptiMOS
®
Power-Transistor
Features
• N-channel Logic Level - Enhancement mode
Product Summary
V
DS
R
DS(on),max
(SMD version)
55
10.7
80
V
mW
A
• Automotive AEC Q101 qualified
I
D
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
PG-TO263-3-2
PG-TO220-3-1
PG-TO262-3-1
Type
IPB80N06S2L-11
IPP80N06S2L-11
IPI80N06S2L-11
Package
PG-TO263-3-2
PG-TO220-3-1
PG-TO262-3-1
Ordering Code
SP0002-18177
SP0002-18175
SP0002-18176
Marking
2N06L11
2N06L11
2N06L11
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol
I
D
Conditions
T
C
=25 °C,
V
GS
=10 V
T
C
=100 °C,
V
GS
=10 V
2)
Pulsed drain current
2)
Avalanche energy, single pulse
2)
Gate source voltage
4)
Power dissipation
Operating and storage temperature
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
T
C
=25 °C
I
D
=80A
Value
80
58
320
280
±20
158
-55 ... +175
mJ
V
W
°C
Unit
A
Rev. 1.1
page 1
2010-10-26

IPB80N06S2L11 Related Products

IPB80N06S2L11 IPB80N06S2L-11 IPP80N06S2L11 IPI80N06S2L-11 IPI80N06S2L11
Description MOSFET MOSFET MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS MOSFET MOSFET MOSFET N-Ch 55V 80A I2PAK-3 OptiMOS MOSFET MOSFET
Configuration Single SINGLE WITH BUILT-IN DIODE Single SINGLE WITH BUILT-IN DIODE Single
Product Attribute Attribute Value - Attribute Value - Attribute Value
Manufacturer Infineon - Infineon - Infineon
Product Category MOSFET - MOSFET - MOSFET
Technology Si - Si - Si
Mounting Style SMD/SMT - Through Hole - Through Hole
Package / Case TO-263-3 - TO-220-3 - TO-262-3
Number of Channels 1 Channel - 1 Channel - 1 Channel
Transistor Polarity N-Channel - N-Channel - N-Channel
Vds - Drain-Source Breakdown Voltage 55 V - 55 V - 55 V
Id - Continuous Drain Current 80 A - 80 A - 80 A
Rds On - Drain-Source Resistance 10.7 mOhms - 11 mOhms - 11 mOhms
Vgs - Gate-Source Voltage 20 V - 20 V - 20 V
Minimum Operating Temperature - 55 C - - 55 C - - 55 C
Maximum Operating Temperature + 175 C - + 175 C - + 175 C
Pd - Power Dissipation 158 W - 158 W - 158 W
Channel Mode Enhancement - Enhancement - Enhancement
Packaging Reel - Tube - Tube
Height 4.4 mm - 15.65 mm - 9.45 mm
Length 10 mm - 10 mm - 10.2 mm
Transistor Type 1 N-Channel - 1 N-Channel - 1 N-Channel
Width 9.25 mm - 4.4 mm - 4.5 mm
Fall Time 13 ns - 13 ns - 13 ns
Rise Time 32 ns - 32 ns - 32 ns
Typical Turn-Off Delay Time 46 ns - 46 ns - 46 ns
Typical Turn-On Delay Time 11 ns - 11 ns - 11 ns
Unit Weight 0.079014 oz - 0.084199 oz - 0.211644 oz
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