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GSH10A10

Description
Schottky Barrier Diode
CategoryDiscrete semiconductor    diode   
File Size43KB,6 Pages
ManufacturerNihon Inter Electronics Corporation
Websitehttp://www.niec.co.jp
Download Datasheet Parametric Compare View All

GSH10A10 Overview

Schottky Barrier Diode

GSH10A10 Parametric

Parameter NameAttribute value
MakerNihon Inter Electronics Corporation
Parts packaging codeTO-220AC
package instructionR-PSFM-T2
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.88 V
JEDEC-95 codeTO-220AC
JESD-30 codeR-PSFM-T2
Maximum non-repetitive peak forward current180 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
SBD
T y p e :
C10T04QH-11A
C10T04QH-
OUTLINE DRAWING
FEATURES
*Tabless TO-220
*Dual Diodes – Cathode Common
*Low Forward Voltage Drop
*High Surge Capability
*Tj=150
°C
operation
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage
Repetitive Peak Surge Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Approx Net Weight:
1.45g
Symbol
V
RRM
V
RRSM
I
O
I
F(RMS)
I
FSM
T
jw
T
stg
C10T04QH-11A
40
45(pulse width
1µs duty
1/50)
50 Hz Full Sine Wave
10
Tc=128°C
Resistive Load
11.1
50Hz Full Sine Wave ,1cycle
120
Non-repetitive
-40 to +150
-40 to +150
Unit
V
V
A
A
A
°C
°C
Electrical
Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
Symbol
I
RM
V
FM
Conditions
Tj= 25°C, V
RM
= V
RRM
per arm
Tj= 25°C, I
FM
= 5 A
per arm
Min.
-
-
-
Typ.
-
-
-
Max.
1
0.61
3
Unit
mA
V
°C
/W
Rth
(
j-c) Junction to Case

GSH10A10 Related Products

GSH10A10 C10T04QH-11A
Description Schottky Barrier Diode Schottky Barrier Diode
Maker Nihon Inter Electronics Corporation Nihon Inter Electronics Corporation
Parts packaging code TO-220AC SFM
package instruction R-PSFM-T2 R-PSIP-T3
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
application GENERAL PURPOSE GENERAL PURPOSE
Shell connection CATHODE CATHODE
Configuration SINGLE COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.88 V 0.61 V
JESD-30 code R-PSFM-T2 R-PSIP-T3
Maximum non-repetitive peak forward current 180 A 120 A
Number of components 1 2
Phase 1 1
Number of terminals 2 3
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C
Maximum output current 10 A 10 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT IN-LINE
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 100 V 40 V
surface mount NO NO
technology SCHOTTKY SCHOTTKY
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
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