SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 FEBRUARY 1996
COMPLEMENTARY TYPE
BSP31 BSP41
BSP33 BSP43
Device type in full
C
BSP31
BSP33
PARTMARKING DETAIL
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
Collector-Base
BSP31
Breakdown Voltage BSP33
Collector-Emitter
BSP31
Breakdown Voltage BSP33
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
MIN.
-70
-90
-60
-80
-5
-100
-50
-0.25
-0.5
-1.0
-1.2
30
100
50
300
20
120
100
500
650
pF
pF
MHz
ns
ns
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
TOT
T
j
:T
stg
MAX.
UNIT
V
V
V
V
µ
A
BSP31
-70
-60
-5
-2
-1
2
BSP33
-90
-80
UNIT
V
V
V
A
A
W
°C
-55 to +150
CONDITIONS.
I
C
=-100
µ
A
I
C
=-100
µ
A
I
C
=-10mA
I
C
=-10mA
I
E
=-10
µ
A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
nA
V
V
V
V
V
CB
=-60V
V
CB
=-60V, T
amb
=125°C
I
C
=-150mA, I
B
=-15mA
I
C
=-500mA, I
B
=-50mA
I
C
=-150mA, I
B
=-15mA
I
C
=-500mA, I
B
=-50mA
I
C
=-100
µ
A, V
CE
=-5V
I
C
=-100mA, V
CE
=-5V
I
C
=-500mA, V
CE
=-5V
V
CB
=-10V, f =1MHz
V
EB
=-0.5V, f =1MHz
I
C
=-50mA, V
CE
=-10V
f =35MHz
V
CC
=-20V, I
C
=-100mA
I
B1
=-I
B2
=-5mA
Collector-Emitter Saturation V
CE(sat)
Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Collector Capacitance
Emitter Capacitance
Transition Frequency
Turn-On Time
Turn-Off Time
V
BE(sat)
h
FE
C
c
C
e
f
T
T
on
T
off
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
3 - 62
Renesas Electronics MCUs
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