BU900TP
NPN power TRILINTON™
Features
■
■
■
Integrated high voltage active clamping zener
Clamping energy capability 100% tested
Very high current gain
Applications
■
■
■
■
1
Engine ignition control
Switching regulators
Motor control
Light ballast
Description
The BU900TP is a planar, monolithic, high voltage
power TRILINTON™ with a built-in active Zener
clamping circuit. This device has been specifically
designed for unclamped, inductive applications
such as ignition systems, switching regulators,
and wherever high voltage and high robustness is
required.
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
Table 1.
Device summary
Part number
BU900TP
Marking
Package
SOT-82
BU900TP
b
O
Figure 1.
so
te
le
ro
P
SOT-82
uc
d
2
3
s)
t(
Internal schematic diagram
P
e
od
r
s)
t(
uc
Packaging
Tube
November 2008
Rev 2
1/8
www.st.com
8
Electrical ratings
BU900TP
1
Electrical ratings
Table 2.
Symbol
V
CES
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
J
Absolute maximum rating
Parameter
Collector-emitter voltage (V
BE
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Collector peak current (t
P
< 5ms)
Base current
Total dissipation at T
c
= 25°C
Storage temperature
Max. operating junction temperature
Value
370
13
5
8
1
55
Unit
V
V
A
Table 3.
Symbol
Thermal data
Parameter
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
R
thj-case
Thermal resistance junction-case
b
O
so
te
le
r
P
d
o
-65 to 150
150
uc
s)
t(
A
A
W
P
e
od
r
Value
2.27
ct
u
s)
(
°C
°C
Unit
°C/W
2/8
BU900TP
Electrical characteristics
2
Electrical characteristics
(T
case
= 25°C unless otherwise specified)
Table 4.
Symbol
I
EBO
I
CES
Electrical characteristics
Parameter
Emitter cut-off current
(I
C
= 0)
Collector cut-off current
(V
BE
= 0)
Collector-emitter
breakdown voltage
(V
BE
= 0)
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
DC current gain
Secondary breakdown
energy
Test Conditions
V
EB
= 13 V
V
CE
= 370 V
Min.
Typ.
Max.
100
100
Unit
µA
µA
V
(BR)CES
I
C
= 50 mA
I
C
= 2.5 A
I
C
= 3 A
I
C
= 3 A
I
C
= 1 A
I
C
= 4 A
_ _
_
_
I
B
= 1 mA
370
V
CE(sat) (1)
V
BE(sat) (1)
h
FE
E
s/b (1)
I
B
= 3 mA
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
1. Pulsed duration = 300
µs,
duty cycle
≤
1.5%
b
O
so
_
te
le
I
B
= 3 mA
ro
P
80
uc
d
660
s)
t(
4
4
V
V
CE
= 5 V 7000
L = 10 mH
P
e
od
r
s)
t(
uc
3.5
V
V
V
mJ
3/8
Electrical characteristics
BU900TP
2.1
Electrical characteristics (curves)
Figure 2.
DC current gain
Figure 3.
Collector-emitter saturation
voltage
Figure 4.
Collector-emitter saturation
voltage
Figure 5.
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
b
O
so
te
le
Base-emitter saturation
voltage
ro
P
uc
d
s)
t(
P
e
od
r
s)
t(
uc
4/8
BU900TP
Package mechanical data
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at:
www.st.com
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(s
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P
b
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te
le
so
b
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b
O
so
te
le
ro
P
uc
d
s)
t(
P
e
od
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s)
t(
uc
5/8