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BU900TP

Description
Darlington Transistors NPN Power TRILINTON
CategoryDiscrete semiconductor    The transistor   
File Size138KB,8 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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BU900TP Overview

Darlington Transistors NPN Power TRILINTON

BU900TP Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
package instructionROHS COMPLIANT PACKAGE-3
Contacts3
Reach Compliance Codeunknown
Maximum collector current (IC)5 A
Collector-emitter maximum voltage370 V
ConfigurationDARLINGTON, 3 TRANSISTORS WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)7000
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)55 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
BU900TP
NPN power TRILINTON™
Features
Integrated high voltage active clamping zener
Clamping energy capability 100% tested
Very high current gain
Applications
1
Engine ignition control
Switching regulators
Motor control
Light ballast
Description
The BU900TP is a planar, monolithic, high voltage
power TRILINTON™ with a built-in active Zener
clamping circuit. This device has been specifically
designed for unclamped, inductive applications
such as ignition systems, switching regulators,
and wherever high voltage and high robustness is
required.
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Device summary
Part number
BU900TP
Marking
Package
SOT-82
BU900TP
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Internal schematic diagram
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Packaging
Tube
November 2008
Rev 2
1/8
www.st.com
8

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