M1MA151KT1,
M1MA152KT1
Preferred Device
Single Silicon Switching
Diodes
These Silicon Epitaxial Planar Diodes are designed for use in ultra
high speed switching applications. These devices are housed in the
SC−59 package which is designed for low power surface mount
applications.
Features
http://onsemi.com
•
Fast t
rr
, < 3.0 ns
•
Low C
D
, < 2.0 pF
•
Available in 8 mm Tape and Reel
SC−59 PACKAGE SINGLE
SILICON SWITCHING DIODES
40/80 V−100 mA
SURFACE MOUNT
3 CATHODE
Use M1MA151/2KT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2KT3 to order the 13 inch/10,000 unit reel.
•
Pb−Free Packages are Available
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Reverse Voltage
M1MA151KT1
M1MA152KT1
Peak Reverse Voltage
M1MA151KT1
M1MA152KT1
Forward Current
Peak Forward Current
Peak Forward Surge Current
I
F
I
FM
I
FSM
(Note 1)
V
RM
Symbol
V
R
Value
40
80
40
80
100
225
500
mAdc
mAdc
mAdc
Vdc
Unit
Vdc
1
ANODE
2
NO CONNECTION
SC−59
CASE 318D
THERMAL CHARACTERISTICS
Rating
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
P
D
T
J
T
stg
Max
200
150
−55
to + 150
Unit
mW
°C
°C
Mx
x
MARKING DIAGRAM
Mx
M
G
1
= Device Code
= H for 151
I for 152
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. t = 1 SEC
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2012
July, 2012
−
Rev. 8
1
Publication Order Number:
M1MA151KT1/D
M1MA151KT1, M1MA152KT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
Characteristic
Reverse Voltage Leakage Current
M1MA151KT1
M1MA152KT1
Forward Voltage
Reverse Breakdown Voltage
M1MA151KT1
M1MA152KT1
Diode Capacitance
Reverse Recovery Time (Figure 1)
2. t
rr
Test Circuit
C
D
t
rr
(Note 2)
V
R
= 0, f = 1.0 MHz
I
F
= 10 mA, V
R
= 6.0 V,
R
L
= 100
W,
I
rr
= 0.1 I
R
V
F
V
R
Symbol
I
R
Condition
V
R
= 35 V
V
R
= 75 V
I
F
= 100 mA
I
R
= 100
mA
Min
−
−
−
40
80
−
−
Max
0.1
0.1
1.2
−
−
2.0
3.0
pF
ns
Vdc
Vdc
Unit
mAdc
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
t
r
t
p
OUTPUT PULSE
t
rr
I
F
t
t
A
R
L
10%
I
rr
= 0.1 I
R
90%
V
R
t
p
= 2
ms
t
r
= 0.35 ns
I
F
= 10 mA
V
R
= 6 V
R
L
= 100
W
Figure 1. Reverse Recovery Time Equivalent Test Circuit
ORDERING INFORMATION
Device
M1MA151KT1
M1MA151KT1G
M1MA152KT1
M1MA152KT1G
Package
SC−59
SC−59
(Pb−Free)
SC−59
SC−59
(Pb−Free)
Shipping
†
3000 Units / Tape & Reel
3000 Units / Tape & Reel
3000 Units / Tape & Reel
3000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
M1MA151KT1, M1MA152KT1
PACKAGE DIMENSIONS
SC*
59
04
CASE 318D*
ISSUE H
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
DIM
A
A1
b
c
D
E
e
L
H
E
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
MILLIMETERS
NOM
MAX
1.15
1.30
0.06
0.10
0.43
0.50
0.14
0.18
2.90
3.10
1.50
1.70
1.90
2.10
0.40
0.60
2.80
3.00
MIN
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
INCHES
NOM
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
H
E
3
1
2
E
b
e
C
L
A
A1
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
SCALE 10:1
mm
inches
*For additional information on our Pb
*
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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PUBLICATION ORDERING INFORMATION
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For additional information, please contact your local
Sales Representative
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3
M1MA151KT1/D