LM4040, LM4041
Precision Micro-Power
Shunt Voltage References
Description
LM4040 and LM4041 are precision two−terminal shunt mode
voltage references offered in factory programmed reverse breakdown
voltages of 1.225 V, 2.500 V, 3.000 V, 3.300 V, 4.096 V, and 5.000 V.
ON Semiconductor’s Charge Programmable floating gate
technology ensures precise voltage settings offering five grades of
initial accuracy; from 0.1% to 2%.
LM4040 and LM4041 operate over a shunt current range of 60
mA
to 15 mA with low dynamic impedance, and 100 ppm/°C temperature
coefficient ensuring stable reverse breakdown voltage accuracy over a
wide range of operating conditions.
These shunt regulators do not require an external stabilizing
capacitor but are stable with any capacitive load (up to 1
mF).
Offered in space saving SOT−23 and SC−70 packages LM4040 and
LM4041 are specified for operation over the full industrial
temperature range of −40°C to +85°C.
Features
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SOT−23 3 Lead
TB SUFFIX
CASE 527AG
SC−70 5 Lead
SD SUFFIX
CASE 419AC
MARKING DIAGRAMS
4xYM
G
4xA
G
•
Reverse Breakdown Voltages:
•
•
•
•
•
♦
1.225 V
♦
3.300 V
♦
2.500 V
♦
4.096 V
♦
3.000 V
♦
5.000 V
Accuracy Grades:
♦
A:
±0.1%
♦
D:
±1.0%
♦
B:
±0.2%
♦
E:
±2.0%
♦
C:
±0.5%
Operating Current: 60
mA
to 15 mA
Low Output Noise: 35
mV
(10 Hz to 10 KHz)
Small Package Size: SOT−23, SC−70
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
4x
A
Y
M
G
= Specific Device Code
=
(4L = LM4040, 4M = LM4041)
= Assembly Location Code
= Production Year
= Production Month
= Pb−Free Package
PIN CONNECTIONS
1
3
2
(SOT−23)
1
2
3
(SC−70)
4
5
Typical Applications
•
•
•
•
•
•
Mobile Handheld Devices
Industrial Process Control
Instrumentation
Laptop and Desktop PCs
Automotive
Energy Management
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
©
Semiconductor Components Industries, LLC, 2015
1
January, 2015 − Rev. 5
Publication Order Number:
LM4040/D
LM4040, LM4041
R
S
V
IN
LM4040
LM4041
V
R
Figure 1. Test Circuit
Table 1. PIN DESCRIPTIONS
Pin
SOT−23
1
2
3
SC−70
3
1
2
4
5
Name
V+
V−
NC
NIC
NIC
Positive voltage
Negative voltage
This pin must be left floating or connected to V−.
No Internal Connection. A voltage or signal applied to this pin will have no effect.
Function
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Reverse Current
Forward Current
Junction Temperature
Power Dissipation
Power Dissipation
SOT−23−3
SC−70−5
Rating
20
10
150
300
240
Unit
mA
mA
°C
mW
mW
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 3. RECOMMENDED OPERATING CONDITIONS
Parameter
I
REVERSE
Ambient Temperature Range
Rating
0.06 − 15
−40 to +85
Unit
mA
°C
Table 4. ESD SUSCEPTABILITY
Symbol
ESD
Human Body Model
Machine Model
Parameter
Min
2000
200
Units
V
V
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LM4040, LM4041
Table 5. DC ELECTRICAL CHARACTERISTICS
(I
R
= 100
mA,
T
A
= −40°C to +85°C, unless otherwise noted. Typical values are at T
A
= +25°C.)
Limits
Symbol
1.225 V
V
R
Reverse Breakdown Voltage
T
A
= +25°C
LM4041A (0.1%)
LM4041B (0.2%)
LM4041C (0.5%)
LM4041D (1.0%)
LM4041E (2.0%)
V
R
Reverse Breakdown Voltage
Tolerance
LM4041A
LM4041B
LM4041C
LM4041D
LM4041E
I
R_MIN
DV
R
/DT
Minimum Operating Current
Reverse Breakdown Voltage
Temperature Coefficient
I
R
= 10 mA
I
R
= 1 mA
LM4041A, B, C
LM4041D, E
I
R
= 100
mA
DV
R
/DI
R
Reverse Breakdown Voltage
Change with Operating Current
I
R_MIN
≤
I
R
≤
1 mA
1 mA
≤
I
R
≤
15 mA
Z
R
Reverse Dynamic Impedance
I
R
= 1 mA,
f = 120 Hz,
I
AC
= 0.1 I
R
LM4041A, B, C
LM4041D, E
LM4041A, B, C
LM4041D, E
LM4041A, B
LM4041C
LM4041D, E
e
N
DV
R
V
HYST
2.500 V
V
R
Reverse Breakdown Voltage
T
A
= +25°C
LM4040A (0.1%)
LM4040B (0.2%)
LM4040C (0.5%)
LM4040D (1.0%)
LM4040E (2.0%)
V
R
Reverse Breakdown Voltage
Tolerance
LM4040A
LM4040B
LM4040C
LM4040D
LM4040E
2.498
2.496
2.490
2.475
2.450
2.500
2.500
2.500
2.500
2.500
±2
±4
±10
±25
±50
2.502
2.504
2.510
2.525
2.550
±19
±21
±29
±49
±74
mV
V
Wideband Noise
Reverse Breakdown Voltage
Long Term Stability
Thermal Hysteresis (Note 2)
I
R
= 100
mA,
10 Hz
≤
f
≤
10 KHz
T = 1000 h
DT
= −40°C to +125°C
1.2238
1.2226
1.219
1.213
1.200
1.225
1.225
1.225
1.225
1.225
±1.2
±2.4
±6
±12
±25
45
±20
±15
±15
±15
0.7
0.7
2.5
2.5
0.5
0.5
0.5
200
120
0.08
2.0
2.5
8
10
1.5
1.5
2.0
mV
RMS
ppm
%
W
mV
±100
±150
1.2262
1.2274
1.231
1.237
1.250
±9.2
±10.4
±14
±24
±36
65
mA
ppm/°C
mV
V
Parameter
Test Conditions
Min
Typ
Max
Units
1. Guaranteed by design.
2. Thermal hysteresis is defined as the difference in voltage measured at +25°C after cycling to temperature −40°C and the 25°C measure-
ment after cycling to temperature +125°C.
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LM4040, LM4041
Table 5. DC ELECTRICAL CHARACTERISTICS
(I
R
= 100
mA,
T
A
= −40°C to +85°C, unless otherwise noted. Typical values are at T
A
= +25°C.)
Limits
Symbol
2.500 V
I
R_MIN
DV
R
/DT
Minimum Operating Current
Reverse Breakdown Voltage
Temperature Coefficient
I
R
= 10 mA
I
R
= 1 mA
LM4040A, B, C
LM4040D, E
I
R
= 100
mA
DV
R
/DI
R
Reverse Breakdown Voltage
Change with Operating Current
I
R_MIN
≤
I
R
≤
1 mA
1 mA
≤
I
R
≤
15 mA
Z
R
Reverse Dynamic Impedance
I
R
= 1 mA,
f = 120 Hz,
I
AC
= 0.1 I
R
LM4040A, B, C
LM4040D, E
LM4040A, B, C
LM4040D, E
LM4040A, B
LM4040C
LM4040D, E
e
N
DV
R
V
HYST
3.000 V
V
R
Reverse Breakdown Voltage
T
A
= +25°C
LM4040A (0.1%)
LM4040B (0.2%)
LM4040C (0.5%)
LM4040D (1.0%)
LM4040E (2.0%)
V
R
Reverse Breakdown Voltage
Tolerance
LM4040A
LM4040B
LM4040C
LM4040D
LM4040E
I
R_MIN
DV
R
/DT
Minimum Operating Current
Reverse Breakdown Voltage
Temperature Coefficient
I
R
= 10 mA
I
R
= 1 mA
LM4040A, B, C
LM4040D, E
I
R
= 100 uA
DV
R
/DI
R
Reverse Breakdown Voltage
Change with Operating Current
I
R_MIN
≤
I
R
≤
1 mA
1mA
≤
I
R
≤
15 mA
LM4040A, B, C
LM4040D, E
LM4040A, B, C
LM4040D, E
2.997
2.994
2.985
2.970
2.940
3.000
3.000
3.000
3.000
3.000
±3
±6
±15
±30
±60
45
±20
±15
±15
±15
0.4
0.4
2.7
2.7
1.1
1.3
9
11
mV
±100
±150
3.003
3.006
3.015
3.030
3.060
±22
±26
±34
±59
±89
65
mA
ppm/°C
mV
V
Wideband Noise
Reverse Breakdown Voltage
Long Term Stability
Thermal Hysteresis (Note 2)
I
R
= 100
mA,
10 Hz
≤
f
≤
10 KHz
T = 1000 h
DT
= −40°C to +125°C
45
±20
±15
±15
±15
0.3
0.3
2.5
2.5
0.3
0.3
0.3
350
120
0.08
1.0
1.2
8
10
0.8
0.9
1.1
mV
RMS
ppm
%
W
mV
±100
±150
65
mA
ppm/°C
Parameter
Test Conditions
Min
Typ
Max
Units
1. Guaranteed by design.
2. Thermal hysteresis is defined as the difference in voltage measured at +25°C after cycling to temperature −40°C and the 25°C measure-
ment after cycling to temperature +125°C.
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LM4040, LM4041
Table 5. DC ELECTRICAL CHARACTERISTICS
(I
R
= 100
mA,
T
A
= −40°C to +85°C, unless otherwise noted. Typical values are at T
A
= +25°C.)
Limits
Symbol
3.000 V
Z
R
Reverse Dynamic Impedance
I
R
= 1 mA,
f = 120 Hz,
I
AC
= 0.1 I
R
LM4040A, B
LM4040C
LM4040D, E
e
N
DV
R
V
HYST
3.300 V
V
R
Reverse Breakdown Voltage
T
A
= +25°C
LM4040A (0.1%)
LM4040B (0.2%)
V
R
Reverse Breakdown Voltage
T
A
= +25°C
LM4040C (0.5%)
LM4040D (1.0%)
V
R
Reverse Breakdown Voltage
Tolerance
LM4040A
LM4040B
LM4040C
LM4040D
I
R_MIN
DV
R
/DT
Minimum Operating Current
Reverse Breakdown Voltage
Temperature Coefficient
I
R
= 10 mA
I
R
= 1 mA
LM4040A, B, C
LM4040D
I
R
= 100
mA
DV
R
/DI
R
Reverse Breakdown Voltage
Change with Operating Current
I
R_MIN
≤
I
R
≤
1 mA
1 mA
≤
I
R
≤
15 mA
Z
R
Reverse Dynamic Impedance
I
R
= 1 mA,
f = 120 Hz,
I
AC
= 0.1 I
R
LM4040A, B, C
LM4040D
LM4040A, B, C
LM4040D
LM4040A, B
LM4040C
LM4040D
e
N
DV
R
V
HYST
4.096 V
V
R
Reverse Breakdown Voltage
T
A
= +25°C
LM4040A (0.1%)
LM4040B (0.2%)
LM4040C (0.5%)
LM4040D (1.0%)
4.092
4.088
4.080
4.055
4.096
4.096
4.096
4.096
4.100
4.104
4.120
4.137
V
Wideband Noise
Reverse Breakdown Voltage
Long Term Stability
Thermal Hysteresis (Note 2)
I
R
= 100
mA,
10 Hz
≤
f
≤
10 KHz
T = 1000 h
DT
= −40°C to +125°C
3.297
3.294
3.285
3.270
3.300
3.300
3.300
3.300
±3
±6
±15
±30
45
±20
±15
±15
±15
0.3
0.3
2.5
2.5
0.3
0.3
0.3
350
120
0.08
1.0
1.2
8
10
0.8
0.9
1.1
mV
RMS
ppm
%
W
mV
±100
±150
3.303
3.306
3.315
3.330
±22
±26
±34
±59
65
mA
ppm/°C
mV
V
V
Wideband Noise
Reverse Breakdown Voltage
Long Term Stability
Thermal Hysteresis (Note 2)
I
R
= 100
mA,
10 Hz
≤
f
≤
10 KHz
T = 1000 h
DT
= −40°C to +125°C
0.4
0.4
0.4
350
120
0.08
0.9
0.9
1.2
mV
RMS
ppm
%
W
Parameter
Test Conditions
Min
Typ
Max
Units
1. Guaranteed by design.
2. Thermal hysteresis is defined as the difference in voltage measured at +25°C after cycling to temperature −40°C and the 25°C measure-
ment after cycling to temperature +125°C.
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