BFY650B-11
HiRel
NPN Silicon Germanium RF Transistor
4
HiRel
Discrete and Microwave Semiconductor
For high power amplifiers
Ideal for low phase noise oscilators
Maximum available gain: G
ma
= 19 dB at 1.8 GHz
Noise figure F = 0.9 dB at 1.8 GHz
Hermetically sealed microwave package
Space Qualified
ESCC Detail Spec. No.: 5611/010
3
1
2
ESD: Electrostatic discharge
sensitive device,
observe handling precautions!
Type
Marking
Pin Configuration
1
2
E
3
B
4
E
Package
BFY650B-11
-
C
Micro-X
Maximum Ratings
Parameter
Collector-emitter voltage
T
a
> 0 °C
T
a
≤ 0 °C
Collector-base voltage
Emitter-base voltage
Collector current
1)
Base current
Junction temperature
Operating temperature range
Storage temperature range
Thermal Resistance
Junction-soldering point
2)
Notes.:
1)
For T
S
≤ 85°C. For T
S
> 85 °C derating is required
.
2) T
S
is measured on the emitter lead at the soldering point to the pcb.
IFAG PMM RPD D HIR
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V1, November 2012
Symbol
V
CEO
Values
4.0
3.7
Unit
V
V
V
V
mA
mA
C
C
C
V
CBO
V
EBO
I
C
I
B
T
j
T
op
T
stg
13
1.2
150
10
175
-65...+175
-65...+175
R
th JS
150
K/W
BFY650B-11
Electrical Characteristics
at T
A
=25°C; unless otherwise specified
Parameter
Symbol
min.
DC Characteristics
Collector-base cutoff current
V
CB
= 5 V, I
E
= 0
Collector-emitter cutoff current
V
CE
= 4.0 V, I
B
= 0.1 µA
Emitter-base cuttoff current
V
EB
= 1.2 V, I
C
= 0
DC current gain
I
C
= 80 mA, V
CE
= 3 V
h
FE
110
180
270
-
I
EBO
-
-
10
A
1)
Values
typ.
max.
Unit
I
CBO
I
CEX
-
-
10
µA
-
-
200
µA
AC Characteristics
Collector-base capacitance
V
CB
= 2 V, V
BE
= vbe = 0, f = 1 MHz
Collector-emitter capacitance
V
CE
= 2 V, V
BE
= vbe = 0, f = 1 MHz
Emitter-base capacitance
V
EB
= 0.5V, V
CB
= vcb = 0, f = 1 MHz
Noise Figure (Z
S
= Z
sopt)
I
C
= 10 mA, V
CE
= 3 V, f = 1.8 GHz
I
C
= 10 mA, V
CE
= 3 V, f = 6.0 GHz
Insertion power gain (Z
S
= Z
L
= 50
)
I
C
= 80 mA, V
CE
= 3 V, f = 1.8 GHz
I
C
= 80 mA, V
CE
= 3 V, f = 6.0 GHz
Power gain (Z
S
= Z
Sopt
, Z
L
= Z
Lopt
)
I
C
= 80 mA, V
CE
= 3 V, f = 1.8 GHz
Power gain (Z
S
= Z
Sopt
, Z
L
= Z
Lopt
)
I
C
= 80 mA, V
CE
= 3 V, f = 6.0 GHz
Notes.:
1) This Test assures V(BR)CE0 > 4.0V
C
CB
C
CE
C
EB
F
-
0.26
-
pF
-
0.55
-
pF
-
1.4
-
pF
dB
-
-
0.9
1.4
-
-
dB
-
-
16.5
6.7
19.2
-
-
dB
-
-
dB
-
9.3
-
|S
21e
|
2
G
ma2)
G
ma2)
2)
G
ma
½
S
21
(
k
k
2
1)
,
S
12
G
ms
½
S
21
S
12
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V1, November 2012
IFAG PMM RPD D HIR
BFY650B-11
Micro-X Package
4
Edition 2012-11
3
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© Infineon Technologies AG 2012
All Rights Reserved.
1
2
Attention please!
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or
hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual
property rights of an third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For
information on the types in question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in life-support devices or systems with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or to
support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
IFAG PMM RPD D HIR
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V1, November 2012
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