OM6052SJ datasheet, PDF - EEWORLD Datasheet

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OM6052SJ: DescriptionHIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on); CategoryDiscrete semiconductor The transistor; File Size17KB，2 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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OM6052SJ Overview

HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)

OM6052SJ Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	TO-267AA
package instruction	FLANGE MOUNT, R-MSFM-P3
Contacts	3
Reach Compliance Code	compli
Other features	HIGH RELIABILITY
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	30 A
Maximum drain current (ID)	30 A
Maximum drain-source on-resistance	0.16 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-267AA
JESD-30 code	R-MSFM-P3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	280 W
Maximum pulsed drain current (IDM)	80 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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OM6050SJ OM6052SJ OM6054SJ

OM6051SJ OM6053SJ OM6055SJ

HIGH CURRENT MOSFET IN ISOLATED, TO-267

HERMETIC PACKAGE, SIZE 7 DIE, LOW R

DS(on)

High Current, High Voltage 100V Thru 1000V,

Up To 100 Amp N-Channel, Size 7 MOSFETs,

High Energy Capability

FEATURES

•

Isolated Hermetic Metal Package

Size 7 Die, High Energy

Fast Switching, Low Drive Current

Ease Of Paralleling For Added Power

Low R

DS(on)

Available Screened To MIL-S-19500, TX, TXV And S Levels

DESCRIPTION

This series of hermetically packaged products feature the latest advanced MOSFET

and packaging technology. They are ideally suited for Military requirements where

small size, high performance and high reliability are required, and in applications such

as switching power supplies, motor controls, inverters, choppers, audio amplifiers and

high energy pulse circuits. This series also features avalanche high energy capability

at elevated temperatures.

MAXIMUM RATINGS

@ 25°C

PART NUMBER

OM6050SJ

OM6051SJ

OM6052SJ

OM6053SJ

OM6054SJ

OM6055SJ

SCHEMATIC

1

V

DS

100 V

200 V

500 V

600 V

800 V

1000 V

R

DS(on)

.014

.030

.160

.230

.500

.800

I

D

(Continuous)

100 A

55 A

30 A

25 A

18 A

10 A

3.1

MECHANICAL OUTLINE

ø.165

.155

.805

.795

.290

.260

.065

.055

.150

.950 .140

.930

.665

.645

1 2 3

3

.750

.500

.200

.065

ø.055

2

.200

.400

.160

TO-267

4 11 R0

3.1 - 105

OM6052SJ Related Products

	OM6052SJ	OM6050SJ	OM6051SJ	OM6053SJ	OM6055SJ	OM6054SJ
Description	HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)	HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)	HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)	HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)	HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)	HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)

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