SSM07N70CP,R-A
N-channel Enhancement-mode Power MOSFET
Dynamic dv/dt rating
Repetitive Avalanche Rated
Fast Switching
Simple Drive Requirement
G
S
D
BV
DSS
R
DS(ON)
I
D
675V
1.2
Ω
7A
DESCRIPTION
The SSM07N70C series is
specially designed as a main switching device
for
universal 90~265VAC off-line AC/DC converter applications.
Both TO-220
and TO-262 type provide high blocking voltage to overcome
voltage surge
and sag in the toughest power system with the best
combination of fast
switching,ruggedized design and cost-effectiveness.
G
D
S
TO-220 (P)
The TO-220 and TO-262 packages
are widely
preferred for all
commercial
and
industrial applications. The device is well suited for switch-mode
power supplies,
AC-DC
converters and high-current high-speed switching
circuits.
G
D
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
GS
I
D
@ T
C
=25°C
I
D
@ T
C
=100°C
I
DM
P
D
@ T
C
=25°C
E
AS
I
AR
E
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Rating
675
±
30
7
4.4
18
89
0.7
140
7
7
-55 to 150
-55 to 150
S
TO-262 (R)
Units
V
V
A
A
A
W
W/°C
mJ
A
mJ
°C
°C
THERMAL DATA
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
1.4
62
Unit
°C/W
°C/W
3/21/2005 Rev.2.01
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SSM07N70CP,R-A
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=1mA
Min.
675
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.6
-
-
4.5
-
-
-
32
8.6
9
17
15
35
18
2075
120
8
Max. Units
-
-
1.2
4
-
10
100
±100
-
-
-
-
-
-
-
-
-
-
V
V/°C
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
∆
BV
DSS
/
∆
Tj
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Breakdown Voltage Temperature Coefficient
Reference to 25°C, I
D
=1mA
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
V
GS
=10V, I
D
=3.5A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=3.5A
V
DS
=675V, V
GS
=0V
V
DS
=480V
,
V
GS
=0V
V
GS
=
±
30V
I
D
=7A
V
DS
=480V
V
GS
=10V
V
DD
=300V
I
D
=7A
R
G
=10Ω, V
GS
=10V
R
D
=43Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
Notes:
1.Pulse width limited by safe operating area.
2.Starting T
j
=25
o
C , V
DD
=50V , L=5mH , R
G
=25Ω , I
AS
=7A.
3.Pulse width <300us , duty cycle <2%.
Parameter
Continuous Source Current ( Body Diode )
Test Conditions
V
D
=V
G
=0V , V
S
=1.5V
T
j
=25°C, I
S
=7A, V
GS
=0V
Min.
-
-
-
Typ.
-
-
-
Max. Units
7
18
1.5
A
A
V
Pulsed Source Current ( Body Diode )
1
Forward On Voltage
3
3/21/2005 Rev.2.01
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SSM07N70CP,R-A
12
T
C
=25
o
C
10
V
G
=10V
V
G
=6.0V
I
D
, Drain Current (A)
V
G
=5.5V
8
T
C
=150
o
C
V
G
=10V
V
G
=6.0V
I
D
, Drain Current (A)
8
6
V
G
=5.5V
V
G
=5.0V
6
V
G
=5.0V
4
4
2
2
V
G
=4.0V
V
G
=4.0V
0
0
5
10
15
20
25
0
0
10
20
30
40
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3
I
D
=3.5A
2.5
1.1
V
G
=10V
Normalized BV
DSS
(V)
Normalized R
DS(ON)
-50
0
50
100
150
2
1
1.5
1
0.9
0.5
0.8
0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
T
j
, Junction Temperature (
o
C)
Fig 3. Normalized BV
DSS
vs. Junction
Temperature
Fig 4. Normalized On-Resistance
vs. Junction Temperature
3/21/2005 Rev.2.01
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SSM07N70CP,R-A
8
100
7
80
6
I
D
, Drain Current (A)
5
60
4
P
D
(W)
40
20
0
3
2
1
0
25
50
75
100
125
150
0
50
100
150
T
c
, Case Temperature (
o
C)
Tc , Case Temperature(
o
C)
Fig 5. Maximum Drain Current vs.
Case Temperature
Fig 6. Typical Power Dissipation
100
1
Normalized Thermal Response (R
thjc
)
DUTY=0.5
0.2
10
I
D
(A)
10us
100us
1
0.1
0.1
0.05
P
DM
0.02
0.01
SINGLE PULSE
t
T
1ms
T
c
=25
o
C
Single Pluse
10ms
100ms
0
1
10
100
1000
10000
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
(V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
3/21/2005 Rev.2.01
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4 of 6
SSM07N70CP,R-A
16
10000
f=1.0MHz
14
I
D
=7A
V
DS
=320V
V
DS
=400V
Ciss
V
GS
, Gate to Source Voltage (V)
12
10
V
DS
=480V
8
C (pF)
Coss
100
6
4
Crss
2
0
0
5
10
15
20
25
30
35
40
45
50
1
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
(V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
5
4
10
T
j
= 150
o
C
I
S
(A)
1
T
j
= 25
o
C
V
GS(th)
(V)
3
2
0.1
1
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0
-50
0
50
100
150
V
SD
(V)
T
j
, Junction Temperature ( C)
o
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
3/21/2005 Rev.2.01
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