EN29SL800T-70TCP datasheet, PDF

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EN29SL800T-70TCP: Description8 Megabit (1024K x 8-bit /512K x 16-Bit) Flash Memory Boot Sector Flash Memory, CMOS 1.8 Volt-only; File Size305KB，42 Pages; ManufacturerETC

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EN29SL800T-70TCP Overview

8 Megabit (1024K x 8-bit /512K x 16-Bit) Flash Memory Boot Sector Flash Memory, CMOS 1.8 Volt-only

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EN29SL800

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

Boot Sector Flash Memory, CMOS 1.8 Volt-only

FEATURES

•

Single power supply operation

- Full voltage range:1.65-2.2 volt for read and

write operations.

- Ideal for battery-powered applications.

•

Manufactured on 0.18 µm triple-metal double

poly triple-well CMOS Flash Technology

•

High performance

- Access times as fast as 70 ns

•

Low power consumption (typical values at 5

MHz)

- 7 mA typical active read current

- 15 mA typical program/erase current

- 0.2

µA

typical standby current

•

Flexible Sector Architecture:

- One 16-Kbyte, two 8-Kbyte, one 32-Kbyte,

and fifteen 64-Kbyte sectors (byte mode)

- One 8-Kword, two 4-Kword, one 16-Kword

and fifteen 32-Kword sectors (word mode)

•

Sector protection:

- Hardware locking of sectors to prevent

program or erase operations within individual

sectors

Additionally, temporary Sector Unprotect

allows code changes in previously locked

sectors.

•

High performance program/erase speed

- Byte/Word program time: 5µs/7µs typical

- Sector erase time: 500ms typical

•

JEDEC Standard Embedded Erase and

Program Algorithms

•

JEDEC standard DATA# polling and toggle

bits feature

•

Single Sector and Chip Erase

•

Sector Unprotect Mode

•

Erase Suspend / Resume modes:

Read or program another Sector during

Erase Suspend Mode

•

Low Vcc write inhibit < 1.2V

•

Minimum 1,000K endurance cycle

•

Package Options

- 48-pin TSOP (Type 1)

- 48-ball 6mm x 8mm FBGA

•

Commercial and industrial temperature

Range

GENERAL DESCRIPTION

The EN29SL800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory,

organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 5µs. The

EN29SL800 features 1.8V voltage read and write operation, with access time as fast as 70ns to

eliminate the need for WAIT statements in high-performance microprocessor systems.

The EN29SL800 has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)

controls, which eliminate bus contention issues. This device is designed to allow either single Sector

or full chip erase operation, where each sector can be individually protected against program/erase

operations or temporarily unprotected to erase or program. The device can sustain a minimum of

1,000K program/erase cycles on each sector.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. A, Issue Date: 2005/06/15

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