Applications
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
HEXFET
®
Power MOSFET
IRF3707Z
IRF3707ZS
IRF3707ZL
Qg
9.7nC
PD - 95812A
V
DSS
R
DS(on)
max
30V
9.5m
:
Benefits
l
Low R
DS(on)
at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRF3707Z
D
2
Pak
IRF3707ZS
TO-262
IRF3707ZL
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
Pulsed Drain Current
Continuous Drain Current, V
GS
@ 10V
Max.
30
Units
V
A
g
@ 10V
g
i
42
i
59
230
57
28
± 20
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
W
W/°C
°C
0.38
-55 to + 175
300 (1.6mm from case)
10 lbf in (1.1 N m)
x
x
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Typ.
Max.
2.653
–––
62
40
Units
°C/W
eÃ
e
–––
0.50
–––
–––
Junction-to-Ambient (PCB Mount)
h
Notes
through
are on page 12
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1
12/4/03
IRF3707Z/S/L
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
81
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.023
7.5
10
1.80
-5.3
–––
–––
–––
–––
–––
9.7
2.8
1.0
3.4
2.5
4.4
6.2
9.8
41
12
3.6
1210
260
130
–––
–––
9.5
12.5
2.25
–––
1.0
150
100
-100
–––
15
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 15V
ns
nC
nC
V
DS
= 15V
V
GS
= 4.5V
I
D
= 17A
S
nA
V
mV/°C
µA
V
Conditions
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 21A
V
GS
= 4.5V, I
D
e
= 17A
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 17A
See Fig. 16
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 17A
Clamped Inductive Load
e
ƒ = 1.0MHz
Avalanche Characteristics
E
AS
I
AR
E
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Ã
d
Typ.
–––
–––
–––
Max.
40
23
5.7
Units
mJ
A
mJ
Repetitive Avalanche Energy
–––
–––
–––
–––
–––
–––
–––
–––
14
5.2
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
59
i
Conditions
MOSFET symbol
D
A
230
1.0
21
7.8
V
ns
nC
Ã
showing the
integral reverse
G
S
p-n junction diode.
T
J
= 25°C, I
S
= 17A, V
GS
= 0V
T
J
= 25°C, I
F
= 17A, V
DD
= 15V
di/dt = 100A/µs
e
e
2
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IRF3707Z/S/L
1000
TOP
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
1000
TOP
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
30V
10
10
3.0V
1
0.1
1
30µs PULSE WIDTH
Tj = 25°C
10
1
0.1
1
30µs PULSE WIDTH
Tj = 175°C
10
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
ID, Drain-to-Source Current
(Α)
ID = 42A
VGS = 10V
1.5
T J = 25°C
100
T J = 175°C
1.0
10.0
2
3
4
VDS = 10V
30µs PULSE WIDTH
5
6
7
8
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRF3707Z/S/L
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
6.0
ID= 17A
VGS, Gate-to-Source Voltage (V)
5.0
4.0
3.0
2.0
1.0
0.0
10000
C, Capacitance(pF)
VDS= 24V
VDS= 15V
1000
Ciss
Coss
100
Crss
10
1
10
100
0
2
4
6
8
10
12
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
100.00
T J = 175°C
T J = 25°C
10.00
ID, Drain-to-Source Current (A)
100
10
100µsec
1.00
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
10msec
0.10
VGS = 0V
0.0
0.5
1.0
1.5
2.0
0.01
VSD, Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF3707Z/S/L
60
50
ID, Drain Current (A)
2.5
Limited By Package
VGS(th) Gate threshold Voltage (V)
2.0
40
30
20
10
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
1.5
ID = 250µA
1.0
0.5
-75 -50 -25
0
25
50
75 100 125 150 175 200
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Threshold Voltage vs. Temperature
10
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
C
τ
τ
3
0.1
Ri (°C/W)
τi
(sec)
1.163
0.000257
1.073
0.419
0.001040
0.003089
τ
1
τ
2
0.01
Ci=
τi/Ri
Ci=
τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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