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IRF3707ZL

Description
High Frequency Synchronous Buck Converters for Computer Processor Power
CategoryDiscrete semiconductor    The transistor   
File Size406KB,12 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRF3707ZL Overview

High Frequency Synchronous Buck Converters for Computer Processor Power

IRF3707ZL Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-262AA
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)40 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)59 A
Maximum drain current (ID)59 A
Maximum drain-source on-resistance0.0095 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)225
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)57 W
Maximum pulsed drain current (IDM)230 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Applications
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
HEXFET
®
Power MOSFET
IRF3707Z
IRF3707ZS
IRF3707ZL
Qg
9.7nC
PD - 95812A
V
DSS
R
DS(on)
max
30V
9.5m
:
Benefits
l
Low R
DS(on)
at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRF3707Z
D
2
Pak
IRF3707ZS
TO-262
IRF3707ZL
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
Pulsed Drain Current
Continuous Drain Current, V
GS
@ 10V
Max.
30
Units
V
A
™
g
@ 10V
g
i
42
i
59
230
57
28
± 20
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
W
W/°C
°C
0.38
-55 to + 175
300 (1.6mm from case)
10 lbf in (1.1 N m)
x
x
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Typ.
Max.
2.653
–––
62
40
Units
°C/W
e
–––
0.50
–––
–––
Junction-to-Ambient (PCB Mount)
h
Notes

through
‡
are on page 12
www.irf.com
1
12/4/03

IRF3707ZL Related Products

IRF3707ZL IRF3707ZS IRF3707Z
Description High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Synchronous Buck Converters for Computer Processor Power
Is it Rohs certified? incompatible incompatible incompatible
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3
Reach Compliance Code compli compli compli
ECCN code EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 40 mJ 40 mJ 40 mJ
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V 30 V
Maximum drain current (Abs) (ID) 59 A 59 A 59 A
Maximum drain current (ID) 59 A 59 A 59 A
Maximum drain-source on-resistance 0.0095 Ω 0.0095 Ω 0.0095 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSIP-T3 R-PSSO-G2 R-PSFM-T3
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Celsius) 225 225 225
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 57 W 57 W 57 W
Maximum pulsed drain current (IDM) 230 A 230 A 230 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO YES NO
Terminal surface TIN LEAD TIN LEAD Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 30 30 30
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Parts packaging code TO-262AA - TO-220AB
JEDEC-95 code TO-262AA - TO-220AB
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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