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EM4350A6WP27E: Description1 KBit READ / WRITE CONTACTLESS IDENTIFICATION DEVICE; File Size375KB，14 Pages; ManufacturerEMMICRO; Websitehttp://www.emmicroelectronic.com

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EM4350A6WP27E Overview

1 KBit READ / WRITE CONTACTLESS IDENTIFICATION DEVICE

EM4350A6WP27E Preview

EM MICROELECTRONIC

- MARIN SA

EM4150

EM4350

1 KBit READ / WRITE

CONTACTLESS IDENTIFICATION DEVICE

Description

The EM4150/EM4350 (previously named P4150/P4350)

is a CMOS integrated circuit intended for use in electronic

Read/Write RF Transponders. The chip contains 1 KBit of

EEPROM which can be configured by the user, allowing a

write inhibited area, a read protected area, and a read

area output continuously at power on. The memory can

be secured by using the 32 bit password for all write and

read protected operations. The password can be updated,

but never read. The fixed code serial number and device

identification are laser programmed making every chip

unique.

The EM4150 will transmit data to the transceiver by

modulating the amplitude of the electromagnetic field, and

receive data and commands in a similar way. Simple

commands will enable write to EEPROM, to update the

password, to read a specific memory area, and to reset

the logic.

The coil of the tuned circuit is the only external component

required, all remaining functions are integrated in the chip.

The only difference between EM4150 and EM4350 is that

EM4150 comes with standard sized pads, whereas

EM4350 comes with oversized (mega) pads, ideal for use

with bumps on die (Fig. 27).

Features

□

1 KBit of EEPROM organized in 32 words of 32 bits

32 bit Device Serial Number (Read Only Laser ROM)

32 bit Device Identification (Read Only Laser ROM)

Power-On Reset sequence

Power Check for EEPROM write operation

User defined Read Memory Area at Power On

User defined Write Inhibited Memory Area

User defined Read Protected Memory Area

Data Transmission performed by Amplitude

Modulation

Two Data Rate Options 2 KBd (Opt64) or 4 KBd

(Opt32)

Bit Period = 64 or 32 periods of field frequency

170 pF ± 2% on chip Resonant Capacitor

-40 to +85°C Temperature range

100 to 150 kHz Field Frequency range

On chip Rectifier and Voltage Limiter

No external supply buffer capacitance needed due to

low power consumption

Ticketing

Automotive Immobilizer with rolling code

High Security Hands Free Access Control

Industrial automation with portable database

Manufacturing automation

Prepayment Devices

Applications

□

Typical Operating Configuration

Pin Assignment

Coil 2

COIL2

EM4150

Coil 1

COIL1

EM4150

COIL 1

COIL 2

Typical value of inductance at 125 KHz is 9.5 mH

Fig. 1

Coil terminal / Clock input

Coil terminal

Fig. 2

2004, EM Microelectronic-Marin SA

www.emmicroelectronic.com

EM4150

EM4350

Absolute Maximum Ratings

Parameter

Maximum AC peak current

induced on COIL1 and COIL2

Power Supply

Maximum voltage other pads

Minimum voltage other pads

Storage temperature

Electrostatic discharge

maximum to MIL-STD-883C

method 3015

Symbol

COIL

max

min

store

ESD

Conditions

30 mA

-0.3 to 6.0V

+ 0.3V

– 0.3V

-55 to °125°C

1000V

Handling Procedures

This device has built-in protection against high static

voltages or electric fields; however, anti-static

precautions should be taken as for any other CMOS

component.

Unless otherwise specified, proper operation can only

occur when all terminal voltages are kept within the

supply voltage range.

Operating Conditions

Parameter

Operating

temperature

Maximum coil

current

AC Voltage on

coil

Supply frequency

Symbol

COIL

coil

100

150

Min

-40

Typ

Max

+85

Units

°C

Vpp

kHz

Stresses above these listed maximum ratings may cause

permanent damage to the device. Exposure beyond

specified operating conditions may affect device reliability

or cause malfunction.

Note 1): Maximum voltage is defined by forcing 10mA on Coil1-

Coil2

Tranceiver

Data to be sent

to transponder

Modulator

Transponder

Coil1

Oscillator

Antenna

Driver

EM4150

Coil2

Filter

and

Gain

Demodulator

Data decoder

Data received

from transponder

READ MODE

Signal on

Transponder coil

RECEIVE MODE

Signal on

Transceiver coil

Signal on

Transceiver coil

Signal on

Transponder coil

RF Carrier

Data

RF Carrier

Data

Fig. 3

2004, EM Microelectronic-Marin SA

www.emmicroelectronic.com

EM4150

EM4350

Electrical Characteristics

= 2.5V, V

= 0V, f

coil

= 125 kHz Sine wave, V

coil

= 1V

, T

= 25°C unless otherwise stated

Parameter

Symbol Test Conditions

Min

Supply voltage

2.0

2.6

DDee

Minimum EEPROM write

voltage

Power Check EEPROM write

PWcheck

= 3V

Supply current / read

Suppy current / write

Modulator ON voltage drop

Resonance Capacitor

Power On Reset level high

Clock extractor input min.

Clock extractor input max.

EEPROM data endurance

EEPROM retention

prh

clkmin

clkmax

ret

Read Mode

Write mode (V

= 3V)

(COIL1–Vss)

and V

(COIL2-Vss)

coil

= 100µA

(COIL1–Vss)

and V

(COIL2-Vss)

coil

= 5mA

166.5

Rising Supply

Minimum voltage for Clock Extraction

Maximum voltage to detect modulation stop

Erase all / Write all at V

= 5V

= 55°C after 100'000 cycles (Note 1)

1.0

100'000

170

2.0

Typ

Max

5.5

Units

µA

cycles

years

3.0

5.0

0.50

2.50

173.5

2.6

Note 1:

Based on 1000 hours at 150°C

Timing Characteristics

= 2.5V, V

= 0V, f

coil

= 125 kHz Sine wave, V

coil

= 1V

, T

= 25°C unless otherwise stated

All timings are derived from the field frequency and are specified as a number of RF periods.

Parameters

Option : 64 clocks per bit

Read Bit Period

LIW/ACK/NACK pattern Duration

Read 1 Word Duration

Processing Pause Time

Write Access Time

Initialization Time

EEPROM write time

Option : 32 clocks per bit

Read Bit Period

LIW/ACK/NACK pattern Duration

Read 1 Word Duration

Processing Pause Time

Write Access Time

Initialization Time

EEPROM write time

Symbol

Opt64

trdb

tpatt

trdw

tpp

twa

tinit

twee

Opt32

trdb

tpatt

trdw

tpp

twa

tinit

twee

160

1600

1056

2624

RF periods

320

3200

2112

3200

RF periods

Test conditions

Value

Units

including LIW

VDD = 3 V

including LIW

VDD = 3 V

RF periods represent periods of the carrier frequency emitted by the transciever unit. For example, if 125 kHz is used :

The Read bit period (Opt64) would be : 1/125'000*64 = 512 µs, and the time to read 1 word : 1/125'000*3200 = 25.6 ms.

The Read bit period (Opt32) would be : 1/125'000*32 = 256 µs, and the time to read 1 word : 1/125'000*1600 = 12.8 ms.

ATTENTION

Due to amplitude modulation of the coil-signal, the clock-extractor may miss clocks or add spurious clocks close

to the edges of the RF-envelope. This desynchronisation will not be larger than ±3 clocks per bit and must be

taken into account when developing reader software.

2004, EM Microelectronic-Marin SA

www.emmicroelectronic.com

EM4150

EM4350

Block Diagram

Serial Data

Modulator

Encoder

ROM

Coil 2

Voltage

Regulation

EEPROM

VDD

Coil 1

AC/DC

converte

GND

Power

Control

Reset

Write Enable

Clock

Extractor

Sequencer

Control

Logic

Data

Extractor

Command

Decoder

Fig. 4

Functional Description

General

The EM4150 is supplied by means of an electromagnetic

field induced on the attached coil. The AC voltage is

rectified in order to provide a DC internal supply voltage.

When the DC voltage crosses the Power-On level, the

chip enters the Standard Read Mode and sends data

continuously. The data to be sent in this mode is user

defined by storing the first and last addresses to be

output. When the last address is sent, the chip will

continue with the first address until the transceiver sends

a request. In the read mode, a Listen Window (LIW) is

generated before each word. During this time, the

EM4150 will turn to the Receive Mode (RM) if it receives

a valid RM pattern. The chip then expects a valid

command.

Mode of Operation

Power-On

Init

Standard

Read Mode

Memory Organisation

The 1024 bit EEPROM is organised in 32 words of 32

bits. The first three words are assigned to the Password,

the Protection word, and the Control word. In order to

write one of these three words, it is necessary to send

the valid password. At fabrication, the EM4150 comes

with all bits of the password programmed to a logic "0".

The Password cannot be read out. The memory contains

two extra words of Laser ROM. These words are laser

programmed during fabrication for every chip, are unique

and cannot be altered.

Memory Map

Bit 0

Word 0

PASSWORD

PROTECTION WORD

CONTROL WORD

928 Bits of USER

EEPROM

DEVICE SERIAL NUMBER

DEVICE IDENTIFICATION

Laser

Bit 31

Get Command

Receive

Mode

request ?

Yes

Execute Command

Write Word

Write Password

Selective Read

Reset

Control Word

0 - 7 First Word Read

8 - 15 Last Word Read

16 Password Check On/Off

17 Read After Write On/Off

18 - 31 User available

Protection Word

0 - 7 First Word Read Protected

8 - 15 Last Word Read Protected

16 - 23 First Word Write Inhibited

24 - 31 Last Word Write Inhibited

Password

Write Only - NO Read Access

Device Identification Word &

Serial Number Word

Laser Programmed - Read Only

Send word

On means bit set to logic '1'

Off means bit set to logic '0'

Fig. 6

Fig. 5

2004, EM Microelectronic-Marin SA

www.emmicroelectronic.com

EM4150

EM4350

Standard Read Mode

After a Power-On Reset and upon completion of a

command, the chip will execute the Standard Read

Mode, in which it will send data continuously, word by

word from the memory section defined between the First

Word Read (FWR) and Last Word Read (LWR). When

the last word is output, the chip will continue with the first

word until the transceiver sends a request. If FWR and

LWR are the same, the same word will be sent

repetitively. The Listen Window (LIW) is generated

before each word to check if the transceiver is sending

data. The LIW has a duration of 320 (160 opt 32) periods

of the RF field. FWR and LWR have to be programmed

as valid addresses (FWR

≤

LWR and

≤

33).

The words sent by the EM4150 comprise 32 data bits

and parity bits. The parity bits are not stored in the

EEPROM, but generated while the message is sent as

described below. The parity is even for rows and

columns, meaning that the total number of "1's" is even

(including the parity bit).

Receive Mode

To activate the Receive Mode, the Transceiver sends to

the chip the RM pattern (while in the modulated phase of

a Listen Window LIW). The EM4150 will stop sending

data upon reception of a valid RM. The chip then expects

a command. The RM pattern consists of 2 bits "0" sent

by the transceiver. The first bit "0" transmitted is to be

detected during the 64 (32 opt 32) periods where the

modulation is "ON" in LIW.

OUTPUT

WORD n

LIW

INPUT

COMMAND

RM : Two Consecutive bits set to logic "0"

Fig. 9

Commands

The commands are composed of nine bits : eight data

bits and one even parity bit (total amount of "ones" is

even including the parity bit).

COMMAND BITS

00000001 1

00010001 0

00010010 0

FUNCTION

WRITE PASSWORD

WRITE WORD

SELECTIVE READ MODE

RESET

Word Organisation (Words 0 to 32)

First bit output

Data

Row Even Parity

D16

D24

PC0

D17

D25

PC1

D10

D18

D26

PC2

D11

D19

D27

PC3

D12

D20

D28

PC4

D13

D21

D29

PC5

D14

D22

D30

PC6

D15

D23

D31

PC7

Column Even Parity

Last bit output

logic "0"

Fig. 7a

00001010 0

10000000 1

When a word is read protected, the output will consist of

45 bits set to logic "0". The password has to be used to

output correctly a read protected memory area.

Word Organisation (Word 33)

ID2

CK0

PC0

ID3 ID4

CK1 CK2

PC1 PC2

ID5 ID6

CK3 CK4

PC3 PC4

C5 ID0

ID7 ID8

CK5 CK6

PC5 PC6

ID1

ID9

CK7

PC7

First bit

Received

Parity bit

Fig. 10

C0 - C5

: P4150 Code set to Hexadecimal 32

ID0 - ID9

: Version Code

R0 - R7 / CK0 - CK7 : EM reserved, and Check bits

Selective Read Mode

The Selective Read Mode is used to read other data than

that defined between FWR and LWR. To enter Selective

Read Mode, the Transceiver has to send during LIW a

Receive mode pattern (RM) to turn the EM4150 in

Receive Mode. Then the Selective Read Mode

Command is sent by the transceiver followed by the First

and Last addresses to be read. The FWR and LWR are

then replaced by the new addresses and the chip is

operating in the same way as the Standard Read Mode.

The control word is not modified by this command, and

the next standard read mode operation will work with

original FWR and LWR (Selected area is read once and

then the chip returns to Standard Read Mode).

To read words which are Read Protected, a Login

command has to be sent by the transceiver prior to the

Selective Read command. The Login command is to be

used only once for all subsequent commands requiring a

password.

Fig. 7b

Read Sequence

POR

INIT

OUTPUT

LIW LIW

FWR

LIW FWR+1

LWR LIW LIW

FWR

LIW

D0-D7

P0 D8-D15

P1 D16-D23 P2 D24-D31 P3 PC0-PC7

"0"

T0 periods :

32 32

128

16 16

1 bit - 64 T0 periods (Opt64)

32 T0 periods (Opt32)

(Opt64)

(Opt32)

Data

Coded Data

T0 = Period of RF carrier frequency

Fig. 8

2004, EM Microelectronic-Marin SA

www.emmicroelectronic.com

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