THYRISTOR MODULE
100A / 1200 to 1600V
PDT10012
PDH10012
PDT10016
PDH10016
FEATURES
* Isolated Base
* Dual Thyristors or Thyristor and Diode
Cascaded Circuit
* High Surge Capability
* UL Recognized, File No. E187184
OUTLINE DRAWING
PDT
φ
TYPICAL APPLICATIONS
* Rectified For General Use
PDH
Maximum Ratings
Parameter
Repetitive Peak Off-State Voltage
Non Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Reverse Voltage
Approx Net Weight:155g
Symbol
V
DRM
V
DSM
V
RRM
V
RSM
Grade
PDT/PDH10012
PDT/PDH10016
Unit
V
V
1200
1300
1200
1300
1600
1700
1600
1700
Max Rated
Value
Parameter
Average Rectified Output Current
RMS On-State Current
Surge On-State Current
I Squared t
Critical Rate of Turned-On Current
Peak Gate Power
Average Gate Power
Peak Gate Current
Peak Gate Voltage
Peak Gate Reverse Voltage
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
Case mounting
Mounting torque
Terminals
Value per 1 Arm
I
O(AV)
I
T(RMS)
I
TSM
I
2
t
di/dt
P
GM
P
G(AV)
I
GM
V
GM
V
RGM
Tjw
Tstg
Viso
Ftor
Conditions
50Hz Half Sine Wave condition
Tc=77°C
50 Hz Half Sine Wave,1Pulse
Non-Repetitive
2msec to 10msec
V
D
=2/3V
DRM
, I
TM
=2 I
O
, Tj=125°C
I
G
=200mA, di
G
/dt=0.2A/µs
•
Unit
A
A
A
A
2
s
A/µs
100
156
2000
20000
100
5
W
1
W
2
A
10
V
5
V
-40 to +125
°C
-40 to +125
°C
Base Plate to Terminals, AC1min
2500
V
M6 Screw
2.4 to 3.5
N
•
m
M5 Screw
2.4 to 2.8
FPGA/CPLD
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