MOSFET
MODULE
FEATURES
* Trench Gate MOS FET Module
Single 560A /150V
OUTLINE DRAWING
PHM5601
* Super Low Rds(ON) 2 milliohms( @560A )
* With Fast Recovery Source-Drain Diode
Circuit
TYPICAL APPLICATIONS
* Chopper Control For FORKLIFTs
MAXMUM RATINGS
Ratings
Drain-Source Voltage (V
GS
=0V)
Gate - Source Voltage
Continuous Drain Current
Duty=50%
D.C.
Approximate Weight : 650g
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
T
jw
T
stg
V
ISO
F
TOR
M4
M8
PHM5601
150
+/ - 20
560 (Tc=25°C)
440 (Tc=25°C)
1,120 Tc=25°C)
1,780 Tc=25°C)
-40 to +150
-40 to +125
2,500
3.0
1.4
10.5
Unit
V
V
A
A
W
°C
°C
V
N•m
Pulsed Drain Current
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminals to Base AC, 1 min.)
Module Base to Heatsink
Mounting Torque
Gate Terminals
Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS
(@Tc=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Gate-Source Threshold Voltage
Static Drain-Source On-Resistance
Drain-Source On-Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Rise Time
Turn-On Delay Time
Fall Time
Turn-Off Delay Time
I
DSS
I
GSS
V
GS(th)
r
DS(on)
V
DS(on)
g
fs
C
ies
C
oss
C
rss
t
r
t
d(on)
V
DS
=V
DSS
,V
GS
=0V
V
GS
=+/- 20V,V
DS
=0V
V
DS
=V
GS
, I
D
=16mA
V
GS
=10V, I
D
=560A
V
GS
=10V, I
D
=560A
V
DS
=15V, I
D
=560A
V
DS
=10V,V
GS
=0V,f=1MHz
V
DD
= 80V
I
D
=280A
V
GS
= -5V, +10V
R
G
= 1.2 ohm
Min.
-
-
1.0
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
2.0
1.6
1.0
-
110
13
13
400
380
170
1,100
Max.
3.2
3.2
3.2
2.0
1.2
-
-
-
-
-
-
-
-
Unit
mA
µA
V
m-ohm
V
S
nF
nF
nF
ns
t
f
t
d(off)
FREE WHEELING DIODES RATINGS & CHARACTERISTICS
(Tc=25°C)
Characteristic
Symbol
Test Condition
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
I
S
I
SM
V
SD
t
rr
Duty=50%.
D.C. (Terminal Temperature=80
°C
-
I
S
=560A
I
S
=560A, -dis/dt=1,100A/
µs
Min.
-
-
-
-
Typ.
-
-
1.6
130
Max.
560
450
1,120
2.0
-
Unit
A
A
V
ns
Unit
°C/W
THERMAL CHRACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heatsink
Symbol
R
th(j-c)
R
th(c-f)
Test Condition
Mounting surface flat, smooth, and greased
Min.
-
-
Typ.
-
-
Max.
0.07
0.035
Fig.1- Output Characteristics
(Typical)
1200
Fig.2- Drain to Source On Voltage
vs. Gate to Source Voltage
(Typical)
T
C
=25℃
2
1.8
V
GE
=10V
1000
4V
3V
250μs PULSE TEST
T
C
=25℃
250μs PULSE TEST
8V
Drain to Source Voltage V
DS
(V)
1.6
1.4
1.2
DrainCurrent I
D
(A)
800
I
D
=560A
1
0.8
0.6
0.4
0.2
600
400
I
D
=280A
I
D
=140A
200
2V
0 0
0.5
1
1.5
2
2.5
3
3.5
4
0
0
2
4
6
8
10
12
14
16
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Fig.3- Drain to Source On Voltage
vs. Junction Temperature
(Typical)
2.5
Fig.4- Capacitance vs. Drain to Source Voltage
(Typical)
150000
V
GS
=10V
250μs PULSE TEST
Drain to Source Voltage V
DS
(V)
2
125000
Ciss
V
GS
=0V
f=1MH
Z
T
C
=25℃
Capacitance C
(nF)
1.5
I
D
=560A
100000
75000
1
I
D
=280A
50000
Coss
25000
0.5
I
D
=140A
Crss
0
-50
0
50
100
150
0
0.5
1
2
5
10
20
50
80
Junction Temperature Tj
(℃)
Drain to Source Voltage V
DS
(V)
Fig.5- Gate Charge vs. Gate to Source Voltage
(Typical)
16
Fig.6- Series Gate Impedance vs. Switching Time
(Typical)
100
50
20
I
D
=560A
V
DD
=20V
14
V
DD
=40V
V
DD
=80V
I
D
=280A
T
C
=25℃
Gate to Source Voltage V
GS
(V)
Switching Time t
(μs)
12
10
8
6
4
2
0
V
DD
=80V
10
5
2
1
0.5
0.2
td(off)
tr
td(on)
tf
1
2
5
10
20
50
100
200
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0.1
Total Gate Charge Qg
(nC)
Series Gate Impedance R
G
(Ω)
Fig.7- Drain Current vs. Switching Time
(Typical)
1.2
Fig.8- Source to Drain Diode
Forward Characteristics
(Typical)
1200
1
td(off)
V
DD
=80V
R
G
=1.2Ω
T
C
=25℃
T
J
=125℃
T
J
=25℃
1000
Switching Time t
(μs)
Source Current I
S
(A)
0.8
800
0.6
600
0.4
td(on)
400
0.2
t
r
tf
200
0
0
100
200
300
400
500
600
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Drain Current I
D
(A)
Source to Drain Voltage V
SD
(V)
Fig.9- Reverse Recovery Characteristics
(Typical)
500
Peak Reverse Recovery Current I
RrM
(A)
Reverse Recovery Time trr
(ns)
-I
S
=800A
T
J
=125℃
200
trr
100
50
I
RrM
20
10
0
500
1000
1500
2000
2500
-di/dt
(A/μs)
Fig.10- Maximun Transient Thermal Impedance
1x10
-1
(℃/W)
Transient Thermal Impedance Rth
(J-C)
3x10
-2
1x10
-2
3x10
-3
1x10
-3 -5
10
10
-4
10
-3
10
-2
10
-1
1
10
1
SQUARE WAVE PULSE DURATION t
(s)
Test/Measurement
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