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EGP10G

Description
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
CategoryDiscrete semiconductor    diode   
File Size61KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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EGP10G Overview

1 A, 400 V, SILICON, SIGNAL DIODE, DO-41

EGP10G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
Humidity sensitivity level1
Number of components1
Maximum operating temperature150 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time0.05 µs
surface mountNO
EGP10A
THRU
EGP10M
1.0 AMP. Glass Passivated High Efficient Plastic Rectifiers
Voltage Range
50 to 1000 Volts
Current
1.0 Ampere
Features
Plastic material used carries Underwriters Laboratory
Classification 94V-0
Glass passivated cavity-free junction
Superfast recovery time for high efficiency
Low forward voltage, high current capability
Low leakage current
High surge current capability
High temperature soldering guaranteed:
300℃/10seconds, .375”(9.5mm) lead length at 5 lbs.,
(2.3kg) tension
DO-41
Mechanical Data
Cases: JEDEC DO-41 molded plastic over glass
body
Lead: Plated axial leads, solderable per MIL-STD-
750, Method 2026
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.012 ounce, 0.3 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
EGP EGP EGP
Type Number
10A 10B 10D
Maximum Recurrent Peak Reverse Voltage
V
RRM
50 100 200
Maximum RMS Voltage
V
RMS
35 70 140
Maximum DC Blocking Voltage
50 100 200
V
DC
Maximum Average Forward Rectified
Current .375” (9.5mm) Lead Length
@T
A
= 55℃
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.0A
Maximum DC Reverse Current @ T
A
=25℃
at Rated DC Blocking Voltage @ T
A
=125℃
Maximum Reverse Recovery Time ( Note 1 )
T
J
=25
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
EGP EGP EGP EGP EGP
Units
10F 10G 10J 10K 10M
300 400 600 800 1000
210 280 420 560 700
300 400 600 800 1000
1.0
30.0
V
V
V
A
A
I
(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θ
JA
T
J
0.95
1.25
5.0
100.0
50
1.7
V
uA
uA
75
15
70
-65 to + 150
-65 to + 150
nS
pF
℃/W
20
T
STG
Notes: 1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
3. Mount on Cu-Pad Size 5mm x 5mm on P.C.B.
- 584 -

EGP10G Related Products

EGP10G EGP10A EGP10F EGP10D EGP10B EGP10M EGP10J EGP10K
Description 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 300 V, SILICON, SIGNAL DIODE, DO-41 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 SIGNAL DIODE
Maker Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
Reach Compliance Code unknow unknown unknown unknown unknown unknow unknow unknow
Is it Rohs certified? conform to conform to conform to conform to conform to - conform to conform to
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE - SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 0.95 V 1.3 V 0.95 V 0.95 V - 1.7 V 1.7 V
Humidity sensitivity level 1 1 1 1 1 - 1 1
Number of components 1 1 1 1 1 - 1 1
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C - 150 °C 150 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A - 1 A 1 A
Maximum repetitive peak reverse voltage 400 V 50 V 300 V 200 V 100 V - 600 V 800 V
Maximum reverse recovery time 0.05 µs 0.05 µs 0.05 µs 0.05 µs 0.05 µs - 0.075 µs 0.075 µs
surface mount NO NO NO NO NO - NO NO
Base Number Matches - 1 1 1 1 - 1 1
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