PT150S16 datasheet, PDF - EEWORLD Datasheet

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PT150S16: Description3 PHASE, 150 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size116KB，3 Pages; ManufacturerNihon Inter Electronics Corporation; Websitehttp://www.niec.co.jp

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PT150S16 Overview

3 PHASE, 150 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE

PT150S16 Parametric

Parameter Name	Attribute value
Number of terminals	5
Number of components	6
Maximum average input current	150 A
state	ACTIVE
packaging shape	Rectangle
Package Size	Flange mounting
Terminal form	UNSPECIFIED
Terminal location	UPPER
Packaging Materials	UNSPECIFIED
structure	Bridge, 6 ELEMENTS
Shell connection	isolation
Diode component materials	silicon
Diode type	bridge rectifier diode
Phase	3
Maximum repetitive peak reverse voltage	1600 V
Maximum non-repetitive peak forward current	1200 A

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DIODE MODULE

FEATURES

* Isolated Base

* 3 Phase Bridge Circuit

* Designed Power Circuit Board

* High Surge Capability

* UL Recognized, File No. E187184

150A/1200V/1600V

PT150S12 PT150S16

OUTLINE DRAWING

TYPICAL APPLICATIONS

* Rectified For General Use

Maximum Ratings

Parameter

Repetitive Peak Reverse Voltage *1

Non Repetitive Peak Reverse Voltage *1

Approx Net Weight:370g

Symbol

V

RRM

V

RSM

Type / Grade

PT150S12

1200

1300

PT150S16

1600

1750

Max Rated

Value

Unit

V

Parameter

Average Rectified Output Current

Surge Forward Current *1

I Squared t *1

Operating JunctionTemperature Range

Storage Temperature Range

Isoration Voltage

Case mounting

Mounting torque

Terminals

I

O(AV)

I

FSM

I

2

t

Tjw

Tstg

Viso

Ftor

Conditions

3-Phase Full Wave Rectified

Tc=Tt(Terminal)=70°C

50 Hz Half Sine Wave,1Pulse

Non-repetitive

2msec to 10msec

Unit

A

150

1100

6000

A

2

s

-40 to +125

°C

-40 to +125

°C

Base Plate to Terminals, AC1min

2500

V

Greased

M5 Screw

2.4 to 2.8

N

•

m

M5

2.4 to 2.8

Electrical

•

Thermal Characteristics

Characteristics

Peak Reverse Current *1

Peak Forward Voltage *1

Thermal Resistance

*1: Value Per 1Arm

Symbol

Test Conditions

Max. Unit

10

1.35

0.14

0.06

mA

V

°C/W

I

RM

V

RM

= V

RRM,

Tj= 125°C

V

FM

I

FM

= 150A, Tj=25°C

Rth(j-c) Junction to Case (Total)

Base Plate to Heat Sink with Thermal

Rth(c-f)

Compound (Total)

PT150S16 Related Products

	PT150S16	PT150S12
Description	3 PHASE, 150 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE	3 PHASE, 150 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE
Number of terminals	5	5
Number of components	6	6
Maximum average input current	150 A	150 A
state	ACTIVE	ACTIVE
packaging shape	Rectangle	Rectangle
Package Size	Flange mounting	Flange mounting
Terminal form	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	UPPER
Packaging Materials	UNSPECIFIED	UNSPECIFIED
structure	Bridge, 6 ELEMENTS	Bridge, 6 ELEMENTS
Shell connection	isolation	isolation
Diode component materials	silicon	silicon
Diode type	bridge rectifier diode	bridge rectifier diode
Phase	3	3
Maximum repetitive peak reverse voltage	1600 V	1600 V
Maximum non-repetitive peak forward current	1200 A	1200 A

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