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PT150S12

Description
3 PHASE, 150 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size116KB,3 Pages
ManufacturerNihon Inter Electronics Corporation
Websitehttp://www.niec.co.jp
Download Datasheet Parametric Compare View All

PT150S12 Overview

3 PHASE, 150 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE

PT150S12 Parametric

Parameter NameAttribute value
Number of terminals5
Number of components6
Maximum average input current150 A
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formUNSPECIFIED
Terminal locationUPPER
Packaging MaterialsUNSPECIFIED
structureBridge, 6 ELEMENTS
Shell connectionisolation
Diode component materialssilicon
Diode typebridge rectifier diode
Phase3
Maximum repetitive peak reverse voltage1600 V
Maximum non-repetitive peak forward current1200 A
DIODE MODULE
FEATURES
* Isolated Base
* 3 Phase Bridge Circuit
* Designed Power Circuit Board
* High Surge Capability
* UL Recognized, File No. E187184
150A/1200V/1600V
PT150S12 PT150S16
OUTLINE DRAWING
TYPICAL APPLICATIONS
* Rectified For General Use
Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage *1
Non Repetitive Peak Reverse Voltage *1
Approx Net Weight:370g
Symbol
V
RRM
V
RSM
Type / Grade
PT150S12
1200
1300
PT150S16
1600
1750
Max Rated
Value
Unit
V
Parameter
Average Rectified Output Current
Surge Forward Current *1
I Squared t *1
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
Case mounting
Mounting torque
Terminals
I
O(AV)
I
FSM
I
2
t
Tjw
Tstg
Viso
Ftor
Conditions
3-Phase Full Wave Rectified
Tc=Tt(Terminal)=70°C
50 Hz Half Sine Wave,1Pulse
Non-repetitive
2msec to 10msec
Unit
A
A
150
1100
6000
A
2
s
-40 to +125
°C
-40 to +125
°C
Base Plate to Terminals, AC1min
2500
V
Greased
M5 Screw
2.4 to 2.8
N
m
M5
2.4 to 2.8
Electrical
Thermal Characteristics
Characteristics
Peak Reverse Current *1
Peak Forward Voltage *1
Thermal Resistance
*1: Value Per 1Arm
Symbol
Test Conditions
Max. Unit
10
1.35
0.14
0.06
mA
V
°C/W
I
RM
V
RM
= V
RRM,
Tj= 125°C
V
FM
I
FM
= 150A, Tj=25°C
Rth(j-c) Junction to Case (Total)
Base Plate to Heat Sink with Thermal
Rth(c-f)
Compound (Total)

PT150S12 Related Products

PT150S12 PT150S16
Description 3 PHASE, 150 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE 3 PHASE, 150 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE
Number of terminals 5 5
Number of components 6 6
Maximum average input current 150 A 150 A
state ACTIVE ACTIVE
packaging shape Rectangle Rectangle
Package Size Flange mounting Flange mounting
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
Packaging Materials UNSPECIFIED UNSPECIFIED
structure Bridge, 6 ELEMENTS Bridge, 6 ELEMENTS
Shell connection isolation isolation
Diode component materials silicon silicon
Diode type bridge rectifier diode bridge rectifier diode
Phase 3 3
Maximum repetitive peak reverse voltage 1600 V 1600 V
Maximum non-repetitive peak forward current 1200 A 1200 A
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