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PT200S8

Description
DIODE MODULE 200A/800V
File Size125KB,3 Pages
ManufacturerNihon Inter Electronics Corporation
Websitehttp://www.niec.co.jp
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PT200S8 Overview

DIODE MODULE 200A/800V

DIODE MODULE
FEATURES
* Isolated Base
* 3 Phase Bridge Circuit
* Designed Power Circuit Board
* High Surge Capability
* UL Recognized, File No. E187184
200A/800V
PT200S8
OUTLINE DRAWING
TYPICAL APPLICATIONS
* Rectified For General Use
Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage *1
Non Repetitive Peak Reverse Voltage *1
Approx Net Weight:370g
Symbol
V
RRM
V
RSM
Type / Grade
PT200S8
800
1000
Unit
V
Max Rated
Value
Parameter
Average Rectified Output Current
Surge Forward Current *1
I Squared t *1
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
Case mounting
Mounting torque
Terminals
I
O(AV)
I
FSM
I
2
t
Tjw
Tstg
Viso
Ftor
Conditions
3-Phase Full Wave Rectified
Tc=Tt(Terminal)=103°C
50 Hz Half Sine Wave,1Pulse
Non-repetitive
2msec to 10msec
Unit
A
A
200
1850
170000
A
2
s
-40 to +150
°C
-40 to +125
°C
Base Plate to Terminals, AC1min
2000
V
Greased
M5 Screw
2.4 to 2.8
N
m
M5
2.4 to 2.8
Electrical
Thermal Characteristics
Characteristics
Peak Reverse Current *1
Peak Forward Voltage *1
Thermal Resistance
*1: Value Per 1Arm
Symbol
Test Conditions
Max. Unit
20
1.2
0.1
0.06
mA
V
°C/W
I
RM
V
RM
= V
RRM,
Tj= 150°C
V
FM
I
FM
= 200A, Tj=25°C
Rth(j-c) Junction to Case (Total)
Base Plate to Heat Sink with Thermal
Rth(c-f)
Compound (Total)
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