Ordering number : EN8718
ECH8621R
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
ECH8621R
Features
•
•
•
•
•
General-Purpose Switching Device
Applications
Low ON-resistance.
Best suited for lithium battery applications.
2.5V drive.
Composite type, facilitating high-density mounting.
Drain common specifications.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm
2
!0.8mm)
1unit
Mounted on a ceramic board (900mm
2
!0.8mm)
Conditions
Ratings
20
±12
8
40
1.4
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
RDS(on)4
Ciss
Coss
Crss
Conditions
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=4A
ID=4A, VGS=4.5V
ID=4A, VGS=4.0V
ID=4A, VGS=3.1V
ID=2A, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
Ratings
min
20
1
±10
0.5
6.6
11
11.2
12
13.2
11
15.5
16
18.5
22
1250
240
210
20
21
24
30
1.3
typ
max
Unit
V
µA
µA
V
S
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : WF
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82306 / 62006PE MS IM TB-00002065 No.8718-1/4
ECH8621R
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=4.5V, ID=8A
VDS=10V, VGS=4.5V, ID=8A
VDS=10V, VGS=4.5V, ID=8A
IS=8A, VGS=0V
Ratings
min
typ
544
2200
4400
3700
15
2.5
5
0.85
1.2
max
Unit
ns
ns
ns
ns
nC
nC
nC
V
Package Dimensions
unit : mm
7011A-003
Top View
0.25
Electrical Connection
8
7
6
5
2.9
0.15
8
5
0 to 0.02
1
2
3
4
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Top view
2.8
2.3
0.25
1
0.65
4
0.3
0.9
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Bottom View
0.07
SANYO : ECH8
Switching Time Test Circuit
VIN
4V
0V
VIN
ID=4A
RL=2.5Ω
VDD=10V
D
PW=10µs
D.C.≤1%
Rg
VOUT
G
ECH8621R
P.G
50Ω
S
Rg=1kΩ
No.8718-2/4
ECH8621R
10
9
8
ID -- VDS
4.5V
3 .5
V
14
ID -- VGS
VDS=10V
12
Drain Current, ID -- A
3.0V
Drain Current, ID -- A
7
6
5
4
3
2
10
2.5V
8
2.0V
1.5V
6
Ta=7
5
°
0
0.5
1.0
C
4
0
1.5
2.0
2.5
IT08315
1
0
0
0.5
1.0
1.5
VGS=1.0V
2.0
IT08314
Drain-to-Source Voltage, VDS -- V
30
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
40
RDS(on) -- Ta
Ta=25
°
C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
28
26
24
22
20
35
30
ID=4A
2A
25
18
16
14
12
10
2
3
4
5
6
7
8
9
10
IT11235
20
15
5V
=2.
S
, VG
V
2A
3.1
I D=
S=
, V G
4.0V
=4A
S=
ID
A, V G
4
V
I D=
=4.5
, VGS
4A
I D=
10
5
--50
0
50
100
25
°
C
150
2
--25
°
C
200
IT11236
Gate-to-Source Voltage, VGS -- V
3
y
fs -- ID
Ambient Temperature, Ta --
°C
10
7
5
3
2
IS -- VSD
VGS=0V
Forward Transfer Admittance,
y
fs -- S
VDS=10V
2
10
7
5
C
5
°
--2
=
Ta
C
75
°
°
C
25
Source Current, IS -- A
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0
0.2
3
2
5
°
C
25
°
C
1.0
0.1
0.001
2
3
5
7
1.0
2
3
5
Drain Current, ID -- A
2
10
IT08318
100
7
5
3
2
7
Ta=
7
0.4
--25
°
0.6
C
0.8
1.0
1.2
IT08319
SW Time -- ID
Diode Forward Voltage, VSD -- V
ASO
IDP=40A
≤10µs
Switching Time, SW Time -- ns
10000
7
5
3
2
tf
Drain Current, ID -- A
td (off)
1m
ID=8A
s
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
DC
op
10
10
ms
tr
era
0m
tio
s
n(
Ta
=
1000
7
5
3
2
0.1
2
3
5
7
1.0
2
3
5
7
10
Operation in this
area is limited by RDS(on).
25
°
C
)
td(on)
0.01
0.01
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm
2
!0.8mm)
1unit
2 3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
2 3
IT08322
Drain Current, ID -- A
IT11237
Drain-to-Source Voltage, VDS -- V
No.8718-3/4
ECH8621R
1.6
PD -- Ta
Mounted on a ceramic board
(900mm
2
!0.8mm)
1unit
Allowable Power Dissipation, PD -- W
1.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
To
t
al
D
1u
ni
iss
ip
t
at
io
n
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT08323
Note on usage : Since the ECH8621R is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of June, 2006. Specifications and information herein are subject
to change without notice.
PS No.8718-4/4
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