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30KPA170A-HRA

Description
ESD Suppressors / TVS Diodes 170Vso 189VAC 110A UNI-DIRECT
CategoryDiscrete semiconductor    diode   
File Size867KB,7 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
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30KPA170A-HRA Overview

ESD Suppressors / TVS Diodes 170Vso 189VAC 110A UNI-DIRECT

30KPA170A-HRA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLittelfuse
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresEXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, UL RECOGNIZED
Maximum breakdown voltage208.89 V
Minimum breakdown voltage189.9 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation30000 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation8 W
Maximum repetitive peak reverse voltage170 V
surface mountNO
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperature10
TVS Diodes
Axial Leaded – 30 kW > 30KPA-HRA series
30KPA-HRA Series
Descriptions
Uni-directional
RoHS
Pb
e3
The 30KPA-HRA High Reliability Series is designed
specifically to protect sensitive electronic equipment from
voltage transients induced by lightning and other transient
voltage events.
Bi-directional
Features
• 30 kW peak pulse
capability at 10/1000μs
waveform, repetition rate
(duty cycles):0.01%
• Glass passivated chip
junction in P600 package
• Fast response time:
typically less than 1.0ps
from 0 Volts to V
BR
min
• Excellent clamping
capability
• Typical failure mode is
short from over-specified
voltage or current
• Whisker test is conducted
based on JEDEC
JESD201A per its table 4a
and 4c
• IEC-61000-4-2 ESD
30kV(Air), 30kV (Contact)
• EFT protection of data
lines in accordance with
IEC 61000-4-4 (IEC801-4)
• Low incremental surge
resistance
Notes:
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E230531
Maximum Ratings and Thermal Characteristics
(T
A
=25
O
C unless otherwise noted)
Parameter
Peak Pulse Power Dissipation by
10/1000μs Test Waveform (Fig.2)
(Note 1)
Steady State Power Dissipation on
Infinite Heat Sink at T
L
=75ºC
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave Unidirectional
Only (Note 2)
Operating Junction and Storage
Temperature Range
Typical Thermal Resistance Junction
to Lead
Typical Thermal Resistance Junction
to Ambient
Symbol
P
PPM
P
D
I
FSM
T
J
, T
STG
R
ƟJL
R
ƟJA
Value
30
8.0
400
-55 to 175
8.0
40
Unit
kW
W
A
°C
°C/W
°C/W
• Typical I
R
less than 2μA
when V
BR
min>73V
• High temperature
to reflow soldering
guaranteed: 260°C/10sec
/ 0.375” (9.5mm) lead
,
length, 5 lbs., (2.3kg)
tension
• V
BR
@ T
J
= V
BR
@25°C
x (1+
α
T x (T
J
- 25))
(
α
T:Temperature
Coefficient, typical value
is 0.1%)
• UL Recognized compound
meeting flammability
rating V-0
• Lead-free matte tin plated
package
• Halogen free and RoHS
compliant
• Pb-free E3 means 2nd
level interconnect is Pb-
free and the terminal finish
material is tin(Sn) (IPC/
JEDEC J-STD-609A.01)
1.
For RTCA/DO-160G testing results, please see tables in the last section of this
datasheet
Notes:
1. Non-repetitive current pulse per Fig. 4 and derated above T
J
(initial) =25
O
C per Fig 3.
2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per
minute maximum.
Applications
TVS Components are ideal for the protection of I/O
interfaces, V
CC
bus and other vulnerable circuits used in
telecom, computer, industrial and consumer
electronic applications.
Functional Diagram
Bi-directional
Cathode
Uni-directional
Anode
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 05/07/18
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