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TV04A111JB-G

Description
ESD Suppressors / TVS Diodes TVS, BI-DIRECTIONAL 400W 110V 5%
CategoryCircuit protection   
File Size137KB,7 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
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TV04A111JB-G Overview

ESD Suppressors / TVS Diodes TVS, BI-DIRECTIONAL 400W 110V 5%

TV04A111JB-G Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerComchip Technology
Product CategoryESD Suppressors / TVS Diodes
RoHSIn Transition
PolarityBidirectional
Number of Channels1 Channel
Termination StyleSMD/SMT
Breakdown Voltage122 V
Working Voltage110 V
Clamping Voltage177 V
Ipp - Peak Pulse Current2.26 A
Cd - Diode Capacitance-
Package / CaseDO-214AC-2
Pd - Power Dissipation1 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity5000
Vf - Forward Voltage3.5 V
SMD Transient Voltage Suppressor
TV04A5V0-G Thru. TV04A441-G
Working Peak Reverse Voltage: 5.0 to 440 Volts
Power Dissipation: 400 Watts
RoHS Device
Features
-Ideal for surface mount applications.
-Easy pick and place.
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
-Typical IR less than 1μA above 10V.
-Fast response time: typically less than 1nS for
uni-direction, less than 5nS for bi-direction,
from 0V to BV min.
0.179(4.55)
0.162(4.10)
SMA/DO-214AC
0.064(1.63)
0.049(1.23)
0.109(2.76)
0.099(2.51)
0.206(5.22)
0.192(4.87)
0.012(0.30)
0.006(0.15)
Mechanical data
-Case: AMA/DO-214AC, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.064 grams
0.089(2.26)
0.077(1.96)
0.060(1.51)
0.030(0.75)
0.008(0.20) max
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
O
Characteristics
Peak power dissipation on 10/1000μS
waveform (Note1)
Peak pulse current on 10/1000μS
waveform (Note 1)
Steady state power dissipation at T
L
=75°C
Symbol
P
PPM
Value
400
Units
W
I
PPM
See Next Table
A
P
M(AV)
1.0
W
Peak forward surge current, 8.3mS single
half sine-wave unidirectional only (Note 2)
Maximum instantaneous forward voltage
at 25.0A for unidirectional only (Note 3)
Maximum operating junction temperature
Storage temperature range
Notes:
I
FSM
40
A
V
F
T
J
T
STG
3.5/5.0
-55 to +150
-55 to +150
V
°C
°C
1. Non-repetitive current pulse, per Fig. 5 and derated above T
A
=25°C, per Fig. 1.
2. Measured on 8.3mS single half sine-wave or equare wave,duty cycle=4 pulses per minute maximum.
3. VF<3.5V for devices of V
BR
<200V and V
F
<5.0V for devices of V
BR
>201V
REV:D
QW-BTV01
Page 1
Comchip Technology CO., LTD.
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