Switching Gas Discharge Tubes
Gas Plasma Voltage Dependent Switches
RoHS
XT Series
The XT Series is a 2-terminal bi-directional, voltage triggered
switch designed for Xenon HID 'hot re-strike' circuits such as
those found in automobiles. Switching voltages for the devices
are fixed depending on the part number selected. The gas
plasma trigger technology offers very fast switching speeds,
resulting in significantly better di/dt values when compared to
silicon based SIDAC devices. Due to the high switching voltage
of the devices, step-up transformer sizes and specifications can
be reduced saving cost, size and weight.
Features
•
RoHS
compliant
•
2 terminal configuration.
•
Very high switching speed once switching voltage has
been reached, resulting in high di/dt to be generated
enabling the best performance to be extracted from
ignition transformers.
•
High lifetime and stability.
•
Switching performance is virtually unaffected by changes
in ambient temperature.
•
Tape and Reel to EIA 481-1
Applications
•
This product is optimised for Xenon HID ‘Hot re-strike’
circuits which require a very high number of operations
at high current levels. The switching time is typically
10nS for the best possible efficiency
.
XT xxx SM.
8
+0.20
- 0.20
6
+0.20
- 0.20
60.0
XT xxx A.
+4
Dimensions in mm
ORDERING INFORMATION
XT
A
Mechanical Specifications:
Weight (ballast ciruit only):
1.42g (0.049oz.)
Materials:
Electrode Base: Copper alloy
Device Marking:
Electrode Plating material: Bright Sn
Body: Ceramic
Littelfuse ‘LF’ marking, voltage and
product code
VBO
Package Type
Packaging
A= Axial lead tape and reel
SM= Surface Mount
320
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Switching Gas Discharge Tubes
Gas Plasma Voltage Dependent Switches
XT Series
Device Ratings and Specifications
Part
Number
XT350
XT600
XT800
VBO(1) (7)
(V)
297 – 403
510 – 690
680 – 920
Max
Ignition
463
750
1000
VT
@ 5A
(V)
15
15
15
IDRM (2)
(A)
1.0
1.0
1.0
IBO (2)
(mA)
5
5
5
CO (4)
(pF)
1.5
1.5
1.5
VBO to VT
(nS)
25
25
25
RS
(M)
>1
>1
>1
7
SWITCH GAS
DISCHARGE TUBES
L
XT device
321
Electrical Life:
Switching Cycles (5) ………………………………………………………… 150,000
Maximum Ratings:
Max Switching Frequency(6) ………………………………………………………. 400 Hz
Storage Temperature TSTG ……………………………………………………… -40 - +150˚C
Operating Temperature
……………………………………………………… -40 - +150˚C
Notes:
(1) Measured on recommended test circuit (fig 1.)
(2) Measured @ 100 Volts DC
(3) Current required for transition to on-state
(4) Measured @ 1 MHz, zero Volt bias
(5) Measured on recommended test circuit (fig 2.)
(6) Duty Cycle: 1sec on, 10 sec off.
(7) Will retain these limits during life cycle
Definitions:
VBO
– Breakover Voltage
VT @ 5A
– Nominal Off-state Voltage at 5A
IDRM
– Off-state Current
IBO
– Nominal Breakover Current
Co
- Max Capacitance
VBO to VT
– Max switching time from VBO to VT
R1
R1
V
C2
XT device
V
C2
Fig 1.
Recommended breakover voltage test circuit
Fig 2.
Recommended life test circuit
V: open circuit DC voltage =500 (1000V for 600 and 800V parts)
R1 =10KΩ
C1 =680nF
L =0.5µH
Discharge current =500Amps ( approx )
V: open circuit DC voltage =500 (1000V for 600 and 800Vparts)
R1 =51KΩ
C1 =220nF
Discharge current =10 mAmps ( approx )
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Analog electronics
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