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DTB123YS

Description
Digital transistors (built-in resistor)
CategoryDiscrete semiconductor    The transistor   
File Size60KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

DTB123YS Overview

Digital transistors (built-in resistor)

DTB123YS Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresDIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.5
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)56
JESD-30 codeR-PSIP-T3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
VCEsat-Max0.3 V
DTB123YU / DTB123YK / DTB123YS
Transistors
Digital transistors (built-in resistor)
DTB123YU / DTB123YK / DTB123YS
Features
1) Built-in bias resistors enable the
configuration of an inverter circuit
without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-
film resistors with complete isola-
tion to allow positive biasing of the
input. They also have the advan-
tage of almost completely eliminat-
ing parasitic effects.
3) Only the on / off conditions need to
be set for operation, making device
design easy.
External dimensions
(Unit : mm)
(1)
0.3
(3)
1.25
2.1
0.2
0.15
(2)
1.3
2.0
DTB123YU
0.65 0.65
ROHM : UMT3
EIAJ : SC-70
0.1Min.
(1) GND
(2) IN
(3) OUT
Each lead ha same dimensions
Abbreviated symbol : F52
2.9
±
0.2
1.9
±
0.2
0.95 0.95
(1)
(2)
1.6
+0.1
−0.1
2.8
±
0.2
0.7
0.9
DTB123YK
1.1
+
0.2
0.1
0.8
±
0.1
0~0.1
(3)
0.15
+0.1
−0.06
0.4
+0.1
−0.05
All terminals have same dimensions
0.3~0.6
ROHM : SMT3
EIAJ : SC-59
(1) GND
(2) IN
(3) OUT
Abbreviated symbol : F52
(15Min.)
0.45
+0.15
−0.05
Equivalent circuit
ROHM : SPT
EIAJ : SC-72
5
3Min.
Structure
PNP digital transistor
(Built-in resistor type)
DTB123YS
3
±
0.2
4
±
0.2
2
±
0.2
2.5
+0.4
−0.1
0.5
+0.15
0.45
−0.05
(1) GND
(2) OUT
(3) IN
(1) (2) (3)
R
1
OUT
IN
R
2
GND(
+
)
IN
GND(
+
)
OUT
R
1
=2.2kΩ
R
2
=10kΩ
Rev.C
1/3

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