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SMAJ7.5CAe3/TR13

Description
ESD Suppressors / TVS Diodes Transient Voltage Suppressor
CategoryDiscrete semiconductor    diode   
File Size481KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
Download Datasheet Parametric View All

SMAJ7.5CAe3/TR13 Overview

ESD Suppressors / TVS Diodes Transient Voltage Suppressor

SMAJ7.5CAe3/TR13 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicrosemi
Parts packaging codeDO-214AC
package instructionR-PDSO-C2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum breakdown voltage9.21 V
Minimum breakdown voltage8.33 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation400 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityBIDIRECTIONAL
Maximum power dissipation1 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage7.5 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMATTE TIN
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperature40
SMAJ5.0e3 to SMAJ440CAe3
400W Transient Voltage Suppressor (TVS) protection device
Main product characteristics
V
WM
V
BR(min)
- V
BR(max)
I
PP
V
CL(MAX)
P
PP
5.0V – 440V
6.40V – 543V
41.7A – 0.6A
9.6V – 713V
400W
RoHS
COMPLIANT
DO-214AC (SMA)
Description and applications
This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or
radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response
time of clamping action is virtually instantaneous. As a result, they may also be used effectively for protection from
ESD or EFT per IEC61000-4-2 and IEC61000-4-4 or for inductive switching environments and induced RF. They can
also be used for protecting other sensitive components from secondary lightning effects per IEC61000-4-5 and class
levels defined herein. Microsemi also offers numerous other TVS products to meet higher and lower power demands
and special applications.
RoHS compliant (2002/95/EC), MSL level 1 (J-STD-020)
Qualified to automotive grade – AEC Q101
Bi-directional devices are denoted by the suffixes C or CA, electrical characteristics apply in both directions.
Maximum ratings and characteristics
(1)
Symbol
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
R
ΘJL
R
ΘJA
T
STG
T
J
(1)
(2)
(3)
(4)
(5)
Parameter
Peak power dissipation with a 10/1000µs waveform
(2)(3)
(fig.1)
Peak pulse current with a 10/1000µs waveform
(2)
(fig. 3)
Steady state power dissipation at T
L
= 75ºC, lead lengths 0.375”
(9.5mm)
(3)
Non repetitive peak forward surge current
(8.3ms single half sine wave) unidirectional only
(4)
Maximum instantaneous forward voltage at 25A for unidirectional
only
(5)
Typical thermal resistance junction to lead
Typical thermal resistance junction to ambient
Storage temperature
Junction temperature
Value
400
See next table
1.0
40
3.5 / 5.0
30
120
-55 to +150
-55 to +150
Unit
W
A
W
A
V
ºC/W
ºC/W
ºC
ºC
All ratings at 25ºC unless specified otherwise
Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25ºC per Fig. 2. rating is 300W above 78V.
Mounted on copper pad area of 0.2” x 0.2” (5.0mm x 5.0mm)
Mounted on minimum recommended pad layout
V
F
=3.5V for devices of V
BR
< 220V and V
F
=5.0V maximum for devices of V
BR
> 220V
Copyright
©
2010
Mar Rev C
www.Microsemi.com
1/6

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