HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
V
DSS
I
D25
R
DS(on)
IXFH/IXFT 68N20
IXFH/IXFT 74N20
200 V 68 A 35 mW
200 V 74 A 30 mW
t
rr
£
200 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
£
I
DM
, di/dt
£
100 A/ms, V
DD
£
V
DSS
,
T
J
£
150°C, R
G
= 2
W
T
C
= 25°C
68N20
74N20
68N20
74N20
68N20
74N20
Maximum Ratings
200
200
±20
±30
68
74
272
296
68
74
45
5
360
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
g
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
S
G = Gate,
S = Source,
D = Drain,
TAB = Drain
(TAB)
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
Low
rated
package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
6
1.13/10 Nm/lb.in.
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
200
2
4
±100
T
J
= 25°C
T
J
= 125°C
200
1
30
35
V
V
nA
mA
mA
m
W
m
W
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
High power surface package
High power density
74N20
68N20
Pulse test, t
£
300
ms,
duty cycle d
£
2 %
© 2000 IXYS All rights reserved
97522C (8/00)
IXFH 68N20 IXFH 74N20
IXFT 68N20 IXFT 74N20
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
Characteristic Values
Min. Typ.
Max.
35
45
5400
1160
560
40
55
120
26
280
39
135
0.25
0.35
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A
1
2.2
2.54
A
2
2.2
2.6
b
1.0
1.4
b
1
1.65
2.13
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
ÆP
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
1
2
3
TO-247 AD (IXFH) Outline
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 2
W
(External)
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
(TO-247 Package)
IXFH68N20 & IXFH74N80 characteristic curves can be found in the IXFK72N20/
IXFK80N20 data sheet.
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
I
F
= 25A
-di/dt = 100 A/ms,
V
R
= 100 V
Test Conditions
V
GS
= 0 V
Repetitive;
pulse width limited by T
JM
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min.
Typ. Max.
68N20
74N20
68N20
74N20
68
74
272
296
1.5
200
0.85
8
A
A
A
A
V
ns
mC
A
TO-268 Outline
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
£
300
ms,
duty cycle d
£
2 %
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
ARM Technology
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