GSOT03 to GSOT36
www.vishay.com
Vishay Semiconductors
Single-Line ESD Protection in SOT-23
FEATURES
3
• Single-line ESD protection device
• ESD immunity acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
1
2
20421
20512
• ESD capability according to AEC-Q101:
human body model: class H3B: > 8 kV
1
• Space saving SOT-23 package
• e3 - Sn
• AEC-Q101 qualified available
MARKING
(example only)
XX
XX
YYY
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
20357
YYY = type code (see table below)
XX = date code
DESIGN SUPPORT TOOLS
click logo to get started
Models
Available
ORDERING INFORMATION
ENVIRONMENTAL AND QUALITY CODE
PART
RoHS-COMPLIANT +
NUMBER
AEC-Q101
TIN
LEAD (Pb)-FREE
(EXAMPLE) QUALIFIED
PLATED
STANDARD
GREEN
GSOT05-
E
3
GSOT05-
G
3
GSOT05-
H
E
3
GSOT05-
H
G
3
GSOT05-
E
3
GSOT05-
G
3
GSOT05-
H
E
3
GSOT05-
H
G
3
PACKAGING CODE
3K PER 7" REEL
(8 mm TAPE),
15K/BOX = MOQ
-08
-08
-08
-08
-18
-18
-18
-18
10K PER 13" REEL
(8 mm TAPE),
10K/BOX = MOQ
ORDERING CODE
(EXAMPLE)
GSOT05-E3-08
GSOT05-G3-08
GSOT05-HE3-08
GSOT05-HG3-08
GSOT05-E3-18
GSOT05-G3-18
GSOT05-HE3-18
GSOT05-HG3-18
PACKAGE DATA
DEVICE
NAME
GSOT03
GSOT04
GSOT05
GSOT08
GSOT12
GSOT15
GSOT24
GSOT36
PACKAGE
NAME
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
TYPE
CODE
03
03G
04
04G
05
05G
08
08G
12
12G
15
15G
24
24G
36
36G
ENVIRONMENTAL
STATUS
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
WEIGHT
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
MOLDING
COMPOUND
FLAMMABILITY
RATING
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
MOISTURE
SENSITIVITY LEVEL
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
Rev. 2.5, 02-May-17
Document Number: 85807
1
For technical questions, contact:
ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
GSOT03 to GSOT36
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS GSOT03
PARAMETER
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
TEST CONDITIONS
Pin 3 to 1
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 3 to 1
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
I
PPM
P
PP
V
ESD
T
J
T
STG
VALUE
30
369
± 30
± 30
-40 to +125
-55 to +150
UNIT
A
W
kV
kV
°C
°C
ABSOLUTE MAXIMUM RATINGS GSOT04
PARAMETER
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
TEST CONDITIONS
Pin 3 to 1
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 3 to 1
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
I
PPM
P
PP
V
ESD
T
J
T
STG
VALUE
30
429
± 30
± 30
-40 to +125
-55 to +150
UNIT
A
W
kV
kV
°C
°C
ABSOLUTE MAXIMUM RATINGS GSOT05
PARAMETER
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
TEST CONDITIONS
Pin 3 to 1
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 3 to 1
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
I
PPM
P
PP
V
ESD
T
J
T
STG
VALUE
30
480
± 30
± 30
-40 to +125
-55 to +150
UNIT
A
W
kV
kV
°C
°C
ABSOLUTE MAXIMUM RATINGS GSOT08
PARAMETER
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
TEST CONDITIONS
Pin 3 to 1
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 3 to 1
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
I
PPM
P
PP
V
ESD
T
J
T
STG
VALUE
18
345
± 30
± 30
-40 to +125
-55 to +150
UNIT
A
W
kV
kV
°C
°C
Rev. 2.5, 02-May-17
Document Number: 85807
2
For technical questions, contact:
ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
GSOT03 to GSOT36
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS GSOT12
PARAMETER
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
TEST CONDITIONS
Pin 3 to 1
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 3 to 1
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
I
PPM
P
PP
V
ESD
T
J
T
STG
VALUE
12
312
± 30
± 30
-40 to +125
-55 to +150
UNIT
A
W
kV
kV
°C
°C
ABSOLUTE MAXIMUM RATINGS GSOT15
PARAMETER
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
TEST CONDITIONS
Pin 3 to 1
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 3 to 1
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
I
PPM
P
PP
V
ESD
T
J
T
STG
VALUE
8
230
± 30
± 30
-40 to +125
-55 to +150
UNIT
A
W
kV
kV
°C
°C
ABSOLUTE MAXIMUM RATINGS GSOT24
PARAMETER
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
TEST CONDITIONS
Pin 3 to 1
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 3 to 1
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
I
PPM
P
PP
V
ESD
T
J
T
STG
VALUE
5
235
± 30
± 30
-40 to +125
-55 to +150
UNIT
A
W
kV
kV
°C
°C
ABSOLUTE MAXIMUM RATINGS GSOT36
PARAMETER
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
TEST CONDITIONS
Pin 3 to 1
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 3 to 1
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
I
PPM
P
PP
V
ESD
T
J
T
STG
VALUE
3.5
248
± 30
± 30
-40 to +125
-55 to +150
UNIT
A
W
kV
kV
°C
°C
Rev. 2.5, 02-May-17
Document Number: 85807
3
For technical questions, contact:
ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
GSOT03 to GSOT36
www.vishay.com
BiAs-MODE
(1-line Bidirectional Asymmetrical protection mode)
With the GSOTxx one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and
pin 3 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is
between 0 V (ground level) and the specified maximum reverse working voltage (V
RWM
) the protection diode between pin 1 and
pin 3 offers a high isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the breakdown voltage level of the protection diode, the diode
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The
clamping voltage (V
C
) is defined by the breakdown voltage (V
BR
) level plus the voltage drop at the series impedance (resistance
and inductance) of the protection diode.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction
through the protection diode. The low forward voltage (V
F
) clamps the negative transient close to the ground level.
Due to the different clamping levels in forward and reverse direction the GSOTxx clamping behavior is Bidirectional and
Asymmetrical (BiAs).
L1
3
Vishay Semiconductors
1
2
BiAs
Ground
20422
ELECTRICAL CHARACTERISTICS GSOT03
(T
amb
= 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER
Protection paths
Reverse stand-off voltage
Reverse voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at I
R
= 100 μA
at V
R
= 3.3 V
at I
R
= 1 mA
at I
PP
= 1 A
at I
PP
= I
PPM
= 30 A
at I
PP
= 1 A
at I
PP
= I
PPM
= 30 A
at V
R
= 0 V; f = 1 MHz
at V
R
= 1.6 V; f = 1 MHz
SYMBOL
N
channel
V
RWM
V
R
I
R
V
BR
V
C
V
F
C
D
MIN.
-
-
3.3
-
4
-
-
-
-
-
-
TYP.
-
-
-
-
4.6
5.7
10
1
4.5
420
260
MAX.
1
3.3
-
100
5.5
7.5
12.3
1.2
-
600
-
UNIT
lines
V
V
μA
V
V
V
V
V
pF
pF
ELECTRICAL CHARACTERISTICS GSOT04
(T
amb
= 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER
Protection paths
Reverse stand-off voltage
Reverse voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at I
R
= 20 μA
at V
R
= 4 V
at I
R
= 1 mA
at I
PP
= 1 A
at I
PP
= I
PPM
= 30 A
at I
PP
= 1 A
at I
PP
= I
PPM
= 30 A
at V
R
= 0 V; f = 1 MHz
at V
R
= 2 V; f = 1 MHz
SYMBOL
N
channel
V
RWM
V
R
I
R
V
BR
V
C
V
F
C
D
MIN.
-
-
4
-
5
-
-
-
-
-
-
TYP.
-
-
-
-
6.1
7.5
11.2
1
4.5
310
200
MAX.
1
4
-
20
7
9
14.3
1.2
-
450
-
UNIT
lines
V
V
μA
V
V
V
V
V
pF
pF
Rev. 2.5, 02-May-17
Document Number: 85807
4
For technical questions, contact:
ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
GSOT03 to GSOT36
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS GSOT05
(T
amb
= 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER
Protection paths
Reverse stand-off voltage
Reverse voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at I
R
= 10 μA
at V
R
= 5 V
at I
R
= 1 mA
at I
PP
= 1 A
at I
PP
= I
PPM
= 30 A
at I
PP
= 1 A
at I
PP
= I
PPM
= 30 A
at V
R
= 0 V; f = 1 MHz
at V
R
= 2.5 V; f = 1 MHz
SYMBOL
N
channel
V
RWM
V
R
I
R
V
BR
V
C
V
F
C
D
MIN.
-
-
5
-
6
-
-
-
-
-
-
TYP.
-
-
-
-
6.8
7
12
1
4.5
260
150
MAX.
1
5
-
10
8
8.7
16
1.2
-
350
-
UNIT
lines
V
V
μA
V
V
V
V
V
pF
pF
ELECTRICAL CHARACTERISTICS GSOT08
(T
amb
= 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER
Protection paths
Reverse stand-off voltage
Reverse voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at I
R
= 5 μA
at V
R
= 8 V
at I
R
= 1 mA
at I
PP
= 1 A
at I
PP
= I
PPM
= 18 A
at I
PP
= 1 A
at I
PP
= I
PPM
= 18 A
at V
R
= 0 V; f = 1 MHz
at V
R
= 4 V; f = 1 MHz
SYMBOL
N
channel
V
RWM
V
R
I
R
V
BR
V
C
MIN.
-
-
8
-
9
-
-
-
-
-
-
TYP.
-
-
-
-
10
10.7
15.2
1
3
160
80
MAX.
1
8
-
5
11
13
19.2
1.2
-
250
-
UNIT
lines
V
V
μA
V
V
V
V
V
pF
pF
Forward clamping voltage
V
F
Capacitance
C
D
ELECTRICAL CHARACTERISTICS GSOT12
(T
amb
= 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER
Protection paths
Reverse stand-off voltage
Reverse voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at I
R
= 1 μA
at V
R
= 12 V
at I
R
= 1 mA
at I
PP
= 1 A
at I
PP
= I
PPM
= 12 A
at I
PP
= 1 A
at I
PP
= I
PPM
= 12 A
at V
R
= 0 V; f = 1 MHz
at V
R
= 6 V; f = 1 MHz
SYMBOL
N
channel
V
RWM
V
R
I
R
V
BR
V
C
V
F
C
D
MIN.
-
-
12
-
13.5
-
-
-
-
-
-
TYP.
-
-
-
-
15
15.4
21.2
1
2.2
115
50
MAX.
1
12
-
1
16.5
18.7
26
1.2
-
150
-
UNIT
lines
V
V
μA
V
V
V
V
V
pF
pF
Rev. 2.5, 02-May-17
Document Number: 85807
5
For technical questions, contact:
ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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