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DTD133HS

Description
Digital transistors (Includes resistors)
CategoryDiscrete semiconductor    The transistor   
File Size46KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

DTD133HS Overview

Digital transistors (Includes resistors)

DTD133HS Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 3
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)56
JESD-30 codeR-PSIP-T3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
VCEsat-Max0.3 V
DTD133HK / DTD133HS
Transistors
Digital transistors (Includes resistors)
DTD133HK / DTD133HS
Features
1) A built-in bias resistor allows inverter
circuit configuration without external resistors for input
(see equivalent circuit diagram).
2) The bias resistor consists of a thin-film resistor which
is completely isolated, providing the capability
to negative-bias the input, and avoiding parasitic
effects.
3) Operation starts by simply setting On/Off conditions,
simplifying the design of equipment using
the transistors.
4) High packing density.
External dimensions
(Unit : mm)
DTD133HK
(1)
0.4
(3)
1.6
2.8
0.15
0.3to0.6
0to0.1
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
(1) GND
(2) IN
(3) OUT
DTD133HS
3
Equivalent circuit
IN
R
1
R
2
4
2
(15Min.)
OUT
3Min.
0.45
GND
5
2.5
0.5 0.45
IN
GND
OUT
(1) (2) (3)
0.8
ROHM : SPT
EIAJ : SC-72
(1) GND
(2) OUT
(3) IN
Absolute maximum ratings
(Ta=25°C)
Parameter
Supply voltage
Input voltage
Output current
DTD133HK
Power
dissipation DTD133HS
Junction temperature
Storage temperature
Symbol
V
CC
V
I
I
C
Pd
Tj
Tstg
Limits
50
−6
to
+20
500
200
300
150
−55
to
+150
Unit
V
V
mA
mW
°C
°C
Package, marking, and packaging specifications
Part No.
Package
Marking
Packaging code
Basic ordering unit (pieces)
DTD133HK
SMT3
G08
T146
3000
DTD133HS
SPT
TP
5000
1.1
0.95 0.95
1.9
2.9
(2)
Taping specifications
Rev.A
1/2

DTD133HS Related Products

DTD133HS DTD133HK
Description Digital transistors (Includes resistors) Digital transistors (Includes resistors)
Is it Rohs certified? conform to conform to
Maker ROHM Semiconductor ROHM Semiconductor
package instruction IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant compli
ECCN code EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 3 DIGITAL, BUILT IN BIAS RESISTOR RATIO 3.03
Maximum collector current (IC) 0.5 A 0.5 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 56 56
JESD-30 code R-PSIP-T3 R-PDSO-G3
JESD-609 code e1 e1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.3 W 0.2 W
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal surface TIN SILVER COPPER Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE DUAL
Maximum time at peak reflow temperature 10 10
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON

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