IMX9
Transistors
General purpose transistor
(isolated dual transistors)
IMX9
Features
1) Two 2SD2114K chips in a SMT package.
2) Mounting possible with SMT3 automatic mounting
machine.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
External dimensions
(Units : mm)
2.9±0.2
1.9±0.2
0.95 0.95
(4)
(5)
(6)
1.1
+0.2
−0.1
0.8±0.1
+0.2
−0.1
2.8±0.2
0~0.1
Structure
Epitaxial planar type
NPN silicon transistor
The following characteristics apply to both Tr
1
and Tr
2
.
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol: X9
Absolute maximum ratings
(Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limits
25
20
12
500
300(TOTAL)
150
−55~+150
Unit
V
V
V
mA
mW
°C
°C
Equivalent circuit
(4)
(5)
(6)
Tr
1
Tr
2
∗
(3)
(2)
(1)
∗
200mW per element must not be exceeded.
Electrical characteristics
(Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Output On-resistance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Ron
Min.
25
20
12
−
−
−
560
−
−
−
Typ.
−
−
−
−
−
0.18
−
350
8
0.8
Max.
−
−
−
0.5
0.5
0.4
2700
−
−
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
Ω
I
C
=10µA
I
C
=1mA
I
E
=10µA
V
CB
=20V
V
EB
=10V
I
C
/I
B
=500mA/20mA
V
CE
=3V,
I
C
=10mA
V
CE
=10V,
I
E
=−50mA,
f=100MHz
V
CB
=10V,
I
E
=0A,
f=1MHz
I
B
=1mA,
V
i
=100mVrms,
f=1kHz
Conditions
0.3~0.6
(2) (1)
+0.1
+0.1
0.15
−0.06
0.3
−0.05
All terminals have same dimensions
(3)
1.6
IMX9
Transistors
Packaging specifications
Packaging type
Code
Part No.
IMX9
Basic ordering unit (pieces)
Taping
T110
3000
Electrical characteristic curves
2.0
COLLECTOR CURRENT : I
C
(mA)
1.6
2.0µA
1.8µA
1.4µA
1.2µA
800
1.2mA
1.0mA
COLLECTOR CURRENT : I
C
(mA)
1.6µA
COLLECTOR CURRENT : I
C
(mA)
Ta=25°C
1000
1.8mA 2.0mA
1.6mA
1.4mA
1000
500
200
100
50
20
10
5
2
1
0
0.2
0.4
0.6
0.8
Ta=100°C
25°C
−25°C
V
CE
=
3V
Measured using
pulse current.
1.2
1.0µA
0.8µA
600
0.8mA
0.6mA
0.8
0.6µA
0.4
0.4µA
0.2µA
0
0
I
B
=0
0.1
0.2
0.3
0.4
0.5
400
0.4mA
0.2mA
200
0
0
2
Ta=25°C
Measured using
I
B
=0mA
pulse current.
4
6
8
10
1.0
1.2
1.4
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter output
characteristics(Ι)
Fig.2 Grounded emitter output
characteristics (ΙΙ)
Fig.3 Grounded emitter propagation
characteristics
10000
5000
DC CURRENT GAIN : h
FE
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
2000
1000
500
200
100
50
20
10
1
2
5
10 20
DC CURRENT GAIN : h
FE
Ta=25°C
Measured using
pulse current.
V
CE
=
5V
10000
5000
2000
1000
500
200
100
50
20
Ta=100°C
25°C
−25°C
V
CE
=
3V
Measured using
pulse current.
2000
1000
500
200
100
50
20
10
5
2
1
2
5
10 20
I
C
/I
B
=
100
50
25
10
Ta=25°C
Measured using
pulse current.
3V
1V
50 100 200 500 1000
10
1
2
5
10 20
50 100 200
500 1000
50 100 200 5001000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector
current (Ι)
Fig.5 DC current gain vs.
collector current (ΙΙ)
Fig.6 Collector-emitter saturation
voltage vs. collector current (Ι)
IMX9
Transistors
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
BASE SATURATION VOLTAGE : V
BE(sat)
(mV)
BASE SATURATION VOLTAGE : V
BE(sat)
(mV)
2000
1000
500
200
100
50
20
10
5
2
1
2
5
10 20
Ta=100°C
25°C
−25°C
I
C
/I
B
=
25
Measured using
pulse current.
10000
5000
2000
1000
500
200
100
50
20
10
1
2
5
10 20
I
C
/I
B
=10
25
50
100
Ta
=
25°C
Pulsed
10000
5000
2000
1000
500
200
100
50
20
10
1
2
5 10
20
Ta=−25°C
25°C
100°C
l
C
/l
B
=10
Measured using
pulse current.
50 100 200 5001000
50 100 200
500 1000
50 100 200
5001000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
Fig.8 Base-emitter saturation
voltage vs. collector current (Ι)
Fig.9 Base-emitter saturation voltage
vs. collector current (ΙΙ)
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
10000
TRANSITION FREQUENCY : f
T
(MHz)
5000
2000
1000
500
200
100
50
20
10
−1 −2
200
100
50
20
10
5
2
1
0.1 0.2
0.5 1
2
5
10 20
50 100
ON RESISTANCE : Ron (Ω)
Ta=25°C
V
CE
=10V
Measured using
pulse current.
1000
500
100
Ta=25°C
f=1MHz
I
E
=0A
50
20
10
5
2
1
0.5
0.2
0.1
0.01 0.02 0.05 0.1 0.2
0.5
Ta=25°C
f=1kHz
Vi=100mV(rms)
R
L
=1kΩ
−5 −10 −20 −50 −100−200 −500−1000
EMITTER CURRENT : I
E
(mA)
1
2
5
10
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
BASE CURRENT : I
B
(mA)
Fig.10 Gain bandwidth product vs.
emitter current
Fig.11 Collector output capacitance
vs. collector-base voltage
Fig.12 Output-on resistance vs.
base current
Ron measurement circuit
R
L
=1kΩ
Input
Vi
1kHz
100mV(rms)
I
B
V
Output
V
0
Ron=
V
0
×R
L
Vi-V
0
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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