PJA733
PNP Epitaxial Silicon Transistor
AUDIO FREQUENCY AMPLIFIER
HIGH FREQUENCY OS C.
•
Complement to PJC945
TO-92
SOT-23
ABSOLUTE MAXIMUM RATINGS
(Ta = 25
°
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
Ic
P
C
Tj
Tstg
Rating
-50
-45
-5
-100
450
150
-55 ~150
Unit
V
V
V
mA
mW
°C
°C
Device
PJA733CT
PJA733CX
Operating Temperature
-20℃½+85℃
Package
TO-92
SOT-23
P in : 1. Base
2. Emitter
3.Collector
P in : 1. Emitter
2. Colletor
3. Base
ORDERING INFORMATION
ELECTRICAL CHARACTERISTICS
(Ta = 25
°
C)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current-Gain-Bandwidth Product
Output Capacitance
Noise Figure
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
CEO
h
FE
V
CE (SAT)
V
BE (SAT)
V
BE (on)
f
T
C
Ob
NF
Test
Condition
Ic = -100µA, I
E
= 0
Ic =-1.0mA, I
B
=0
I
E
=
_
100µA, I
C
= 0
V
CB
= 45V,I
E
=0
V
EB
=3V,I
C
=0
V
CE
=40V,I
B
=0
V
CE
=6V,I
c
=1.0 mA
I
C
=-100mA,I
B
=-5mA
I
C
=-100mA,I
B
=-5mA
I
C
=-2mA,V
CE
=-5V
V
CE
=-5V,I
C
=-10mA
f=1MH
Z
V
CB
=-10V,I
E
=0
V
CE
=-5V,I
C
=
_
0.2mA
f=1KH
Z
,Rs=1KΩ
Min
-50
-40
-5
Typ
Max
Unit
V
V
V
nA
nA
-50
-50
70
200
-0.2
-0.82
-0.65
190
4.5
0.7
700
-0.7
-1.0
-0.75
7.0
10
-0.6
100
V
V
V
MHz
pF
dB
h
FE
(2)
CLASSIFICATION
R
70-140
Q
120-240
P
200-400
K
350-700
Classification
h
FE
1-3
2002/01.rev.A
PJA733
PNP Epitaxial Silicon Transistor
STATIC CHARACTERISTIC
BASE-EMITTER VOLTAGE
DC CURRENT GAIN
CURRENT GAIN-BANDWIDTH PRODUCT
BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
COLLECTOR OUTPUT CAPACITANCE
2-3
2002/01.rev.A
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