EMX26
Transistors
General purpose transistors
(dual transistors)
EMX26
Features
1) Two 2SD2654 chips in a EMT package.
2) Mounting possible with EMT3 automatic mounting
machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
External dimensions
(Unit : mm)
EMX26
0.22
(4)
(5)
(6)
(3)
(2)
1.2
1.6
(1)
0.13
Each lead has same dimensions
ROHM : EMT6
Structure
Epitaxial planar type
NPN silicon transistor
Abbreviated symbol : X26
The following characteristics apply to both Tr
1
and Tr
2.
Equivalent circuit
EMX26
(3)
(2)
(1)
Tr
1
Tr
2
(4)
(5)
(6)
Absolute maximum ratings
(Ta=25°C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limits
60
50
12
0.15
0.2
Unit
V
V
V
A (DC)
A (Pulse)
∗1
mW
°C
°C
∗2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
150 (TOTAL)
150
−55
to
+150
∗1
Single pulse Pw=100ms.
∗2
120mW per element must not be exceeded.
0.5
0.5 0.5
1.0
1.6
1/3
EMX26
Transistors
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗
Measured using pulse current.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
60
50
12
−
−
−
820
−
−
Typ.
−
−
−
−
−
−
−
250
3.5
Max.
−
−
−
0.3
0.3
0.3
2700
−
∗
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
I
C
=10µA
I
C
=1mA
I
E
=10µA
V
CB
=50V
V
EB
=12V
Conditions
I
C
/I
B
=50mA/5mA
V
CE
/I
C
=5V/1mA
V
CE
=5V,
I
E
=−10mA,
f=100MHz
V
CB
=5V,
I
E
=0A,
f=1MHz
∗
∗
∗
Packaging specifications
Package
Code
Type
Taping
T2R
8000
Basic ordering
unit (pieces)
EMX26
Electrical characteristic curves
2.0
COLLECTOR CURRENT : I
C
(mA)
Ta=25°C
COLLECTOR CURRENT : I
C
(mA)
1.2µA
200
500µA
200
1.6
0.6µA
5
2
1
0.5
0.2
0
0.2
0.8
0.4µA
80
50µA
0.4
0.2µA
I
B
=0
40
Ta=25°C
Measured
using pulse current
4
8
I
B
=0
0
0
0.1
0.2
0.3
0.4
0.5
0
0
12
16
20
Ta=10
1.2
0.8µA
120
100
µA
10
0
°
C
25
°
C
−
25
°C
2.0µA
1.8µA
1.6µA
1.4µA
160
450µA
400µA
350µA
300µA
COLLECTOR CURRENT : I
C
(mA)
µ
A
250
A
200
µ
150
µ
A
V
CE
=5V
100
50
20
1.0µA
0.4
0.6
0.8
1.0
1.2
1.4
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter output
characteristics (
Ι
)
Fig.2 Grounded emitter output
characteristics (
ΙΙ
)
Fig.3 Grounded emitter propagation
characteristics
5000
DC CURRENT GAIN : h
FE
Ta=25°C
Measured
using pulse current
V
CE
=10V
5000
DC CURRENT GAIN : h
FE
Ta=100°C
25°C
V
CE
=5V
Measured
using pulse current
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
10000
10000
1000
500
200
100
50
20
10
5
2
1
0.2
0.5
1
2
5
10 20
I
C
/ I
B
=50
20
10
Ta=25°C
2000
1000
500
5V
2000
1000
500
200
100
50
20
−25°C
200
100
50
20
10
0.2
0.5
1
2
5
10 20
50 100 200
3V
10
0.2
0.5
1
2
5
10 20
50 100 200
50 100 200
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs.
collector current (
Ι
)
Fig.5 DC current gain vs.
collector current (
ΙΙ
)
Fig.6 Collector-emitter saturation voltage
vs. collector current (
Ι
)
2/3
EMX26
Transistors
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR SATURATION VOLTAGE : V
BE(sat)
(mV)
COLLECTOR SATURATION VOLTAGE : V
BE(sat)
(mV)
1000
500
200
100
50
20
10
5
2
1
0.2
0.5
1
2
5
10
20
−25°C
Ta=100°C
25°C
I
C
/ I
B
=10
10000
5000
2000
1000
500
50
I
C
/I
B
=10
20
Ta=25°C
10000
5000
2000
1000
500
100°C
Ta=
−25°C
25°C
I
C
/I
B
=10
200
100
50
20
10
0.2
0.5
1
2
5
10 20
50 100 200
200
100
50
20
10
0.2
0.5
1
2
5
10 20
50 100 200
50 100 200
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.7 Collector-emitter saturation voltage
vs. collector current (
ΙΙ
)
Fig.8 Base-emitter saturation voltage
vs. collector current (
Ι
)
Fig.9 Base-emitter saturation voltage
vs. collector current (
ΙΙ
)
COLLECTOR OUTPUT CAPACITANCE : C
ob
(pF)
1000
500
TRANSITION FREQUENCY : f
T
(MHz)
1000
500
200
100
100
Ta=25°C
f=1MHz
I
E
=0A
50
20
10
Ta=25°C
f=1kHz
V
i
=100mV(rms)
R
L
=1kΩ
200
100
50
20
10
5
Ta=25°C
V
CE
=5V
2
Measured
1
using pulse current
−1 −2
−5 −10 −20
Ron : (Ω)
50
20
10
5
2
1
0.1 0.2
0.5
1
2
5
10
20
50 100
5
2
1
0.5
0.2
0.1
0.01 0.02
0.05 0.1 0.2
0.5 1
2
5
10
−50 −100−200 −500 −1000
EMITTER CURRENT : I
E
(mA)
COLLRCTOR TO BASE VOLTAGE : V
CB
(V)
I
B
(mA)
Fig.10 Gain bandwidth product
vs. emitter current
Fig.11 Collector output capacitance
vs. collector-base voltage
Fig.12 Output on resistance
vs. base current
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
Microcontroller MCU
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