Philips Semiconductors
Product specification
Dual inverter
FEATURES
•
Wide supply voltage range from 1.65 V to 5.5 V
•
5 V tolerant input/output for interfacing with 5 V logic
•
High noise immunity
•
ESD protection:
– HBM EIA/JESD22-A114-B exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V.
• ±24
mA output drive (V
CC
= 3.0 V)
•
CMOS low power consumption
•
Latch-up performance exceeds 250 mA
•
Multiple package options
•
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C.
SYMBOL
t
PHL
/t
PLH
PARAMETER
propagation delay input nA to output nY
CONDITIONS
V
CC
= 1.8 V; C
L
= 30 pF; R
L
= 1 kΩ
V
CC
= 2.5 V; C
L
= 30 pF; R
L
= 500
Ω
V
CC
= 2.7 V; C
L
= 50 pF; R
L
= 500
Ω
V
CC
= 3.3 V; C
L
= 50 pF; R
L
= 500
Ω
V
CC
= 5.0 V; C
L
= 50 pF; R
L
= 500
Ω
C
I
C
PD
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
×
N +
∑(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
N = total load switching outputs;
∑(C
L
×
V
CC2
×
f
o
) = sum of outputs.
2. The condition is V
I
= GND to V
CC
.
input capacitance
power dissipation capacitance per gate
V
CC
= 3.3 V; notes 1 and 2
DESCRIPTION
74LVC2GU04
The 74LVC2GU04 is a high-performance, low-power,
low-voltage, Si-gate CMOS device, superior to most
advanced CMOS compatible TTL families.
Input can be driven from either 3.3 V or 5 V devices.
These features allow the use of these devices in a mixed
3.3 V and 5 V environment.
The 74LVC2GU04 provides two inverters. Each inverter is
a single stage with unbuffered output.
TYPICAL
2.3
1.8
2.6
2.3
1.7
5
7.8
ns
ns
ns
ns
ns
pF
pF
UNIT
2004 Sep 21
2
Philips Semiconductors
Product specification
Dual inverter
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
CC
V
I
V
O
T
amb
t
r
, t
f
PARAMETER
supply voltage
input voltage
output voltage
operating ambient temperature
input rise and fall times
V
CC
= 1.65 V to 2.7 V
V
CC
= 2.7 V to 5.5 V
active mode
CONDITIONS
0
0
−40
0
0
MIN.
1.65
74LVC2GU04
MAX.
5.5
5.5
V
CC
+125
20
10
V
V
V
UNIT
°C
ns/V
ns/V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
I
IK
V
I
I
OK
V
O
I
O
I
CC
, I
GND
T
stg
P
tot
Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
PARAMETER
supply voltage
input diode current
input voltage
output diode current
output voltage
output source or sink current
V
CC
or GND current
storage temperature
power dissipation
T
amb
=
−40 °C
to +125
°C
V
I
< 0 V
note 1
V
O
> V
CC
or V
O
< 0 V
active mode; note 1
V
O
= 0 V to V
CC
CONDITIONS
−
−0.5
−
−0.5
−
−
−65
−
MIN.
−0.5
MAX.
+6.5
−50
+6.5
±50
±50
±100
+150
300
V
mA
V
mA
mA
mA
°C
mW
UNIT
V
CC
+ 0.5 V
2004 Sep 21
5
Embedded System
京公网安备 11010802033920号
EEWORLD
