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P100CH06EN0

Description
Silicon Controlled Rectifier, 336000mA I(T), 600V V(DRM),
CategoryAnalog mixed-signal IC    Trigger device   
File Size862KB,6 Pages
ManufacturerIXYS
Related ProductsFound1parts with similar functions to P100CH06EN0
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P100CH06EN0 Overview

Silicon Controlled Rectifier, 336000mA I(T), 600V V(DRM),

P100CH06EN0 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codecompli
Nominal circuit commutation break time10 µs
Critical rise rate of minimum off-state voltage100 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Maximum holding current600 mA
Maximum leakage current20 mA
On-state non-repetitive peak current1800 A
Maximum on-state voltage2.32 V
Maximum on-state current336000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage600 V
surface mountNO
Trigger device typeSCR
Base Number Matches1

P100CH06EN0 Related Products

P100CH06EN0 P100CH08EN0
Description Silicon Controlled Rectifier, 336000mA I(T), 600V V(DRM), Silicon Controlled Rectifier, 336000mA I(T), 800V V(DRM),
Reach Compliance Code compli compli
Nominal circuit commutation break time 10 µs 10 µs
Critical rise rate of minimum off-state voltage 100 V/us 100 V/us
Maximum DC gate trigger current 200 mA 200 mA
Maximum DC gate trigger voltage 3 V 3 V
Maximum holding current 600 mA 600 mA
Maximum leakage current 20 mA 20 mA
On-state non-repetitive peak current 1800 A 1800 A
Maximum on-state voltage 2.32 V 2.32 V
Maximum on-state current 336000 A 336000 A
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C
Off-state repetitive peak voltage 600 V 800 V
surface mount NO NO
Trigger device type SCR SCR
Base Number Matches 1 1

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