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EMH7

Description
General purpose (dual digital transistors)
File Size47KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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EMH7 Overview

General purpose (dual digital transistors)

EMH7 / UMH7N
Transistors
General purpose (dual digital transistors)
EMH7 / UMH7N
Features
1) Two DTC143T chips in a EMT or UMT package.
External dimensions
(Unit : mm)
EMH7
1.6
0.5
1.0
0.5 0.5
Equivalent circuits
EMH7 / UMH7N
1pin mark
(6) (5) (4)
1.6
1.2
(1) (2) (3)
(3)
(2)
(1)
0.22
0.13
R
1
Each lead has same dimensions
R
1
(4) (5)
(6)
0.65
1.3
0.65
0.7
0.9
R
1
=4.7kΩ
(4)
(3)
UMH7N
0.2
(6)
Package, marking, and packaging specifications
Package
Marking
Code
Basic ordering unit (pieces)
EMT6
H7
TR
8000
UMT6
H7
TR
3000
ROHM : UMT6
EIAJ : SC-88
0.15
1.25
2.1
Type
EMH7
UMH7N
0.1Min.
0 to 0.1
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
120mW per element must not be exceeded.
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limits
50
50
5
100
150(TOTAL)
150
−55
to
+150
Unit
V
V
V
mA
mW
°C
°C
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
∗Transition
frequency of the device.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
R
1
Min.
50
50
5
100
3.29
Typ.
250
250
4.7
Max.
0.5
0.5
0.3
600
6.11
(1)
Each lead has same dimensions
Unit
V
V
V
µA
µA
V
MHz
kΩ
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=50V
V
EB
=4V
Conditions
I
C
/I
B
=5mA/0.25mA
V
CE
=5V,
I
C
=1mA
V
CE
=10V,
I
E
= −5mA,
f=100MHz
2.0
(5)
(2)
1/2

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