K4S510432M-TC1H datasheet, PDF

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K4S510432M-TC1H: Description512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL; Categorystorage storage; File Size74KB，11 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4S510432M-TC1H Overview

512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL

K4S510432M-TC1H Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	TSOP2
package instruction	TSOP2, TSOP54,.46,32
Contacts	54
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	6 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PDSO-G54
JESD-609 code	e0
length	22.22 mm
memory density	536870912 bi
Memory IC Type	SYNCHRONOUS DRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	54
word count	134217728 words
character code	128000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSOP54,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.005 A
Maximum slew rate	0.31 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.16 mm

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K4S510432M

Preliminary

CMOS SDRAM

512Mbit SDRAM

32M x 4bit x 4 Banks

Synchronous DRAM

LVTTL

Revision 0.2

Dec. 2001

Samsung Electronics reserves the right to change products or specification without notice.

Rev. 0.2 Dec. 2001

K4S510432M-TC1H Related Products

	K4S510432M-TC1H	K4S510432M	K4S510432M-TC1L	K4S510432M-TC75	K4S510432M-TL1H	K4S510432M-TL1L	K4S510432M-TL75
Description	512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL	512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL	512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL	512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL	512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL	512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL	512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
Is it Rohs certified?	incompatible	-	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	SAMSUNG	-	SAMSUNG	SAMSUNG	SAMSUNG	-	SAMSUNG
Parts packaging code	TSOP2	-	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
package instruction	TSOP2, TSOP54,.46,32	-	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32
Contacts	54	-	54	54	54	54	54
Reach Compliance Code	unknow	-	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	-	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	6 ns	-	6 ns	5.4 ns	6 ns	6 ns	5.4 ns
Other features	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz	-	100 MHz	133 MHz	100 MHz	100 MHz	133 MHz
I/O type	COMMON	-	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	1,2,4,8	-	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8
JESD-30 code	R-PDSO-G54	-	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54
JESD-609 code	e0	-	e0	e0	e0	e0	e0
length	22.22 mm	-	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm
memory density	536870912 bi	-	536870912 bi	536870912 bi	536870912 bi	536870912 bi	536870912 bi
Memory IC Type	SYNCHRONOUS DRAM	-	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
memory width	4	-	4	4	4	4	4
Number of functions	1	-	1	1	1	1	1
Number of ports	1	-	1	1	1	1	1
Number of terminals	54	-	54	54	54	54	54
word count	134217728 words	-	134217728 words	134217728 words	134217728 words	134217728 words	134217728 words
character code	128000000	-	128000000	128000000	128000000	128000000	128000000
Operating mode	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	-	70 °C	70 °C	70 °C	70 °C	70 °C
organize	128MX4	-	128MX4	128MX4	128MX4	128MX4	128MX4
Output characteristics	3-STATE	-	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP2	-	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
Encapsulate equivalent code	TSOP54,.46,32	-	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	-	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	3.3 V	-	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	-	8192	8192	8192	8192	8192
Maximum seat height	1.2 mm	-	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
self refresh	YES	-	YES	YES	YES	YES	YES
Continuous burst length	1,2,4,8,FP	-	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP
Maximum standby current	0.005 A	-	0.005 A	0.005 A	0.005 A	0.005 A	0.005 A
Maximum slew rate	0.31 mA	-	0.31 mA	0.33 mA	0.31 mA	0.31 mA	0.33 mA
Maximum supply voltage (Vsup)	3.6 V	-	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	-	3 V	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	-	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	-	YES	YES	YES	YES	YES
technology	CMOS	-	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	-	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	-	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.8 mm	-	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	DUAL	-	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	10.16 mm	-	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm

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