512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL

| K4S510432M | K4S510432M-TC1H | K4S510432M-TC1L | K4S510432M-TC75 | K4S510432M-TL1H | K4S510432M-TL1L | K4S510432M-TL75 | |
|---|---|---|---|---|---|---|---|
| Description | 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL | 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL | 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL | 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL | 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL | 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL | 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL |
| Is it Rohs certified? | - | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Maker | - | SAMSUNG | SAMSUNG | SAMSUNG | SAMSUNG | - | SAMSUNG |
| Parts packaging code | - | TSOP2 | TSOP2 | TSOP2 | TSOP2 | TSOP2 | TSOP2 |
| package instruction | - | TSOP2, TSOP54,.46,32 | TSOP2, TSOP54,.46,32 | TSOP2, TSOP54,.46,32 | TSOP2, TSOP54,.46,32 | TSOP2, TSOP54,.46,32 | TSOP2, TSOP54,.46,32 |
| Contacts | - | 54 | 54 | 54 | 54 | 54 | 54 |
| Reach Compliance Code | - | unknow | unknow | unknow | unknow | unknow | unknow |
| ECCN code | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| access mode | - | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
| Maximum access time | - | 6 ns | 6 ns | 5.4 ns | 6 ns | 6 ns | 5.4 ns |
| Other features | - | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| Maximum clock frequency (fCLK) | - | 100 MHz | 100 MHz | 133 MHz | 100 MHz | 100 MHz | 133 MHz |
| I/O type | - | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| interleaved burst length | - | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 |
| JESD-30 code | - | R-PDSO-G54 | R-PDSO-G54 | R-PDSO-G54 | R-PDSO-G54 | R-PDSO-G54 | R-PDSO-G54 |
| JESD-609 code | - | e0 | e0 | e0 | e0 | e0 | e0 |
| length | - | 22.22 mm | 22.22 mm | 22.22 mm | 22.22 mm | 22.22 mm | 22.22 mm |
| memory density | - | 536870912 bi | 536870912 bi | 536870912 bi | 536870912 bi | 536870912 bi | 536870912 bi |
| Memory IC Type | - | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM |
| memory width | - | 4 | 4 | 4 | 4 | 4 | 4 |
| Number of functions | - | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of ports | - | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | - | 54 | 54 | 54 | 54 | 54 | 54 |
| word count | - | 134217728 words | 134217728 words | 134217728 words | 134217728 words | 134217728 words | 134217728 words |
| character code | - | 128000000 | 128000000 | 128000000 | 128000000 | 128000000 | 128000000 |
| Operating mode | - | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| Maximum operating temperature | - | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| organize | - | 128MX4 | 128MX4 | 128MX4 | 128MX4 | 128MX4 | 128MX4 |
| Output characteristics | - | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| encapsulated code | - | TSOP2 | TSOP2 | TSOP2 | TSOP2 | TSOP2 | TSOP2 |
| Encapsulate equivalent code | - | TSOP54,.46,32 | TSOP54,.46,32 | TSOP54,.46,32 | TSOP54,.46,32 | TSOP54,.46,32 | TSOP54,.46,32 |
| Package shape | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | - | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE |
| Peak Reflow Temperature (Celsius) | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| power supply | - | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| Certification status | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| refresh cycle | - | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 |
| Maximum seat height | - | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
| self refresh | - | YES | YES | YES | YES | YES | YES |
| Continuous burst length | - | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP |
| Maximum standby current | - | 0.005 A | 0.005 A | 0.005 A | 0.005 A | 0.005 A | 0.005 A |
| Maximum slew rate | - | 0.31 mA | 0.31 mA | 0.33 mA | 0.31 mA | 0.31 mA | 0.33 mA |
| Maximum supply voltage (Vsup) | - | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| Minimum supply voltage (Vsup) | - | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
| Nominal supply voltage (Vsup) | - | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| surface mount | - | YES | YES | YES | YES | YES | YES |
| technology | - | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | - | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal surface | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | - | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal pitch | - | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
| Terminal location | - | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| Maximum time at peak reflow temperature | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| width | - | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm |