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2SCR512P5T100

Description
Bipolar Transistors - BJT NPN 30V Vceo 2A Ic MPT3
Categorysemiconductor    Discrete semiconductor   
File Size2MB,8 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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Bipolar Transistors - BJT NPN 30V Vceo 2A Ic MPT3

2SCR512P5T100 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSC-62-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max30 V
Collector- Base Voltage VCBO30 V
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage200 mV
Maximum DC Collector Current2 A
Gain Bandwidth Product fT320 MHz
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
DC Current Gain hFE Max500 at 100 mA, 2 V
PackagingCut Tape
PackagingMouseReel
PackagingReel
Continuous Collector Current2 A
DC Collector/Base Gain hfe Min200 at 100 mA, 2 V
Pd - Power Dissipation500 mW (1/2 W)
Factory Pack Quantity1000
2SCR512P5
Midium Power Transistors (30V / 2V)
Datasheet
l
Outline
Parameter
Value
 
SOT-89
 
SC-62
 
 
V
CEO
I
C
30V
2A
MPT3
 
 
 
l
Features
l
Inner circuit
1)Low saturation voltage, typically
 
V
CE(sat)
=0.4V(Max.)
 
(I
C
/I
B
=700mA/35mA)
2)High speed switching
l
Application
LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING
l
Packaging specifications
Part No.
Package
SOT-89
(MPT3)
Package
size
4540
Taping
code
T100
Basic
Reel size Tape width ordering
(mm)
(mm)
unit.(pcs)
180
12
1000
Marking
2SCR512P5
NB
                                                                                         
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
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