DH60-14A
Sonic Fast Recovery Diode
V
RRM
I
FAV
t
rr
=
=
=
1400 V
60 A
230 ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DH60-14A
Backside: cathode
3
1
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very short recovery time
●
Improved thermal behaviour
●
Very low Irm-values
●
Very soft recovery behaviour
●
Avalanche voltage rated for reliable
operation
●
Soft reverse recovery for low EMI/RFI
●
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode
●
Rectifiers in switch mode power
supplies (SMPS)
●
Uninterruptible power supplies (UPS)
Package:
TO-247
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160916c
© 2016 IXYS all rights reserved
DH60-14A
Fast Diode
Symbol
V
RSM
Definition
max. repetitive reverse blocking voltage
reverse current, drain current
Ratings
Conditions
min.
typ.
max. non-repetitive reverse blocking voltage
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 150 °C
d = 0.5
T
VJ
= 150 °C
max. Unit
1400
V
V
RRM
I
R
V
F
1400
200
2
2.04
2.57
2.03
2.73
60
1.28
12
0.25
V
V
R
= 1400 V
V
R
= 1400 V
I
F
=
I
F
=
60 A
60 A
µA
mA
V
V
V
V
forward voltage drop
I
F
= 120 A
I
F
= 120 A
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
C
J
I
RM
t
rr
average forward current
T
C
= 100 °C
rectangular
A
V
mΩ
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
max. reverse recovery current
0.3 K/W
K/W
415
700
32
60
70
230
350
W
A
pF
A
A
ns
ns
T
C
= 25°C
t = 10 ms; (50 Hz), sine; V
R
= 0 V
V
R
= 1200 V f = 1 MHz
I
F
=
60 A; V
R
= 1200 V
T
VJ
= 45°C
T
VJ
= 25°C
T
VJ
= 25 °C
T
VJ
= 100 °C
T
VJ
= 25 °C
T
VJ
= 100 °C
-di
F
/dt = 800 A/µs
reverse recovery time
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160916c
© 2016 IXYS all rights reserved
DH60-14A
Package
Symbol
I
RMS
TO-247
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
typ.
max.
70
Unit
A
T
VJ
T
op
T
stg
Weight
M
D
F
C
-55
-55
-55
6
0.8
20
150
125
150
1.2
120
°C
°C
°C
g
Nm
N
mounting torque
mounting force with clip
Product Marking
Logo
Part No.
Assembly Line
Assembly Code
Date Code
IXYS
XXXXXXXXX
Zyyww
abcd
Ordering
Standard
Ordering Number
DH60-14A
Marking on Product
DH60-14A
Delivery Mode
Tube
Quantity
30
Code No.
496537
Similar Part
DH60-16A
DH60-18A
Package
TO-247AD (2)
TO-247AD (2)
Voltage class
1600
1800
Equivalent Circuits for Simulation
I
* on die level
T
VJ
= 150 °C
V
0
R
0
threshold voltage
slope resistance *
Fast
Diode
V
0 max
R
0 max
1.28
9.5
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160916c
© 2016 IXYS all rights reserved
DH60-14A
Outlines TO-247
E
Q
A
A2
S
Ø
P
Ø
P1
D2
Sym.
Inches
min.
max.
Millimeter
min.
max.
D1
D
2x
E2
4
1
L1
L
2
3
E1
2x
b2
2x
b
C
A1
e
A
A1
A2
D
E
E2
e
L
L1
ØP
Q
S
b
b2
b4
c
D1
D2
E1
Ø P1
0.185 0.209
0.087 0.102
0.059 0.098
0.819 0.845
0.610 0.640
0.170 0.216
0.430 BSC
0.780 0.800
-
0.177
0.140 0.144
0.212 0.244
0.242 BSC
0.039 0.055
0.065 0.094
0.102 0.135
0.015 0.035
0.515
-
0.020 0.053
0.530
-
-
0.29
4.70
5.30
2.21
2.59
1.50
2.49
20.79 21.45
15.48 16.24
4.31
5.48
10.92 BSC
19.80 20.30
-
4.49
3.55
3.65
5.38
6.19
6.14 BSC
0.99
1.40
1.65
2.39
2.59
3.43
0.38
0.89
13.07
-
0.51
1.35
13.45
-
-
7.39
3
1
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160916c
© 2016 IXYS all rights reserved
DH60-14A
Fast Diode
140
120
100
30
I
F
= 60 A
20
40
T
VJ
= 100°C
V
R
= 1200 V
80
100
T
VJ
= 100°C
V
R
= 1200 V
I
F
80
[A]
60
40
T
VJ
= 125°C
20
0
T
VJ
= 25°C
0
1
2
3
Q
r
[µC]
I
RM
60
I
F
= 60 A
[A]
40
10
20
0
100
1000
0
0
400
800
1200
1600
V
F
[V]
Fig. 1 Typ. forward current
I
F
versus V
F
2.0
1400
-di
F
/dt
[A/µs]
Fig. 2 Typ. reverse recovery charge
Q
r
versus -di
F
/dt
150
-di
F
/dt
[A/µs]
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
2.5
T
VJ
= 100°C
1200
1.5
1000
V
R
= 1200 V
T
VJ
= 100°C
V
R
= 1200 V
120
2.0
t
fr
V
FR
90
I
F
= 60 A
1.5
t
rr
800
K
f
1.0
I
RM
Q
r
[µs]
[ns]
600
400
200
30
V
FR
[V]
60
t
fr
1.0
0.5
0.5
0.0
0
40
80
120
160
0
0
400
800
1200
1600
0
0
200
400
600
800
0.0
1000
T
VJ
[°C]
Fig. 4 Dynamic parameters
Q
r
, I
RM
versus T
VJ
-di
F
/dt
[A/µs]
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
di
F
/dt
[A/µs]
Fig. 6 Typ. peak forward voltage
V
FR
& typ. forward recovery
time t
fr
versus di
F
/dt
0.4
0.3
Z
thJC
0.2
[K/W]
0.1
i
1
2
3
R
i
i
0.021 0.0093
0.11
0.038
0.169 0.274
0.0
0.001
0.01
0.1
1
10
t
[s]
Fig. 7 Transient thermal resistance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160916c
© 2016 IXYS all rights reserved
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