2SK3176
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS
V)
2SK3176
Switching Regulator, DC-DC Converter and Motor Drive
Applications
•
•
•
•
Low drain-source ON resistance: R
DS (ON)
= 38 mΩ (typ.)
High forward transfer admittance: |Y
fs
| = 30 S (typ.)
Low leakage current: I
DSS
= 100 mA (max) (V
DS
= 200 V)
Enhancement-mode: V
th
= 1.5 to 3.5 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
Drain current
Drain power dissipation
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
200
200
±20
30
120
150
925
30
15
150
−55
to 150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
Pulse (Note 1)
(Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
Weight: 4.6 g (typ.)
⎯
SC-65
2-16C1B
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
DD
=
50 V, T
ch
=
25°C (initial), L
=
1.66 mH, R
G
=
25
Ω,
I
AR
=
30 A
Note 3: Repetitive rating: pulse width limited by maximum junction temperature.
Note 4:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device.
Please handle with caution.
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
0.833
50.0
Unit
°C/W
°C/W
1
2009-09-29
2SK3176
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
t
f
t
off
Q
g
Q
gs
Q
gd
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
Test Condition
V
GS
= ±16
V, V
DS
=
0 V
V
DS
=
200 V, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
0 V
V
DS
=
10 V, I
D
=
1 mA
V
GS
=
10 V, I
D
=
15 A
V
DS
=
10 V, I
D
=
15 A
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
10 V
0V
4.7
Ω
I
D
=
15 A
R
L
=
6.7
Ω
V
OUT
Min
⎯
⎯
200
1.5
⎯
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
38
30
5400
580
1900
15
55
25
190
125
80
45
Max
±10
100
⎯
3.5
52
⎯
⎯
⎯
⎯
⎯
⎯
ns
⎯
⎯
⎯
⎯
⎯
nC
nC
nC
Unit
μA
μA
V
V
mΩ
S
pF
pF
pF
V
GS
V
DD
∼
100 V
−
Duty
≤
1%, t
w
=
10
μs
V
DD
∼
160 V, V
GS
=
10 V, I
D
=
30 A
−
V
DD
∼
160 V, V
GS
=
10 V, I
D
=
30 A
−
V
DD
∼
160 V, V
GS
=
10 V, I
D
=
30 A
−
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
⎯
⎯
I
DR
=
30 A, V
GS
=
0 V
I
DR
=
30 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/μs
I
DR
=
30 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/μs
Min
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
270
3.0
Max
30
90
−2.0
⎯
⎯
Unit
A
A
V
ns
μC
Marking
TOSHIBA
Note 5: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Product No.
(or abbreviation code)
Lot No.
K3176
Note 5
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2009-09-29
2SK3176
I
D
– V
DS
20
10
16
8
6
4
50
15
10
4.8
6
5
I
D
– V
DS
4.6
4.4
Common source
Tc
=
25°C
Pulse test
Drain current I
D
(A)
Drain current I
D
(A)
15
12
5
Common source
Tc
=
25°C
Pulse test
3.8
40 8
30
4.2
8
3.6
20
4
3.8
4
VGS
=
3.4 V
10
VGS
=
3.6 V
0
0
0.4
0.8
1.2
1.6
2.0
0
0
4
8
12
16
20
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
I
D
– V
GS
50
Common source
VDS
=
10 V
Pulse test
5
V
DS
– V
GS
Common source
Tc
=
25°C
Pulse test
40
V
DS
(V)
Drain-source voltage
4
Drain current I
D
(A)
30
3
20
25
10
100
0
0
Tc
= −55°C
2
ID
=
30 A
1
15
7.5
2
4
6
8
10
0
0
4
8
12
16
20
Gate-source voltage
V
GS
(V)
Gate-source voltage
V
GS
(V)
|Y
fs
| – I
D
100
Common source
VDS
=
10 V
Pulse test
Tc
= −55°C
10
5
3
25
R
DS (ON)
– I
D
0.5
0.3
Common source
Tc
=
25°C
Pulse test
Forward transfer admittance
|Y
fs
| (S)
30
100
Drain-source ON resistance
R
DS
(Ω)
50
0.1
0.05
0.03
VGS
=
10 V
15
1
0.3 0.5
1
3
5
10
30
50
100
0.01
1
3
5
10
30
50
100
Drain current I
D
(A)
Drain current I
D
(A)
3
2009-09-29
2SK3176
R
DS (ON)
– Tc
0.10
Common source
VGS
=
10 V
Pulse test
100
ID
=
30 A
15
7.5
0.06
50
30
Common source
Tc
=
25°C
Pulse test
I
DR
– V
DS
Drain-source ON resistance
R
DS (ON)
(Ω)
0.08
Drain reverse current I
DR
(A)
10
10
5
0.04
5
3
0.02
3
VGS
=
0 V
0
−80
−40
0
40
80
120
160
1
0
0.4
0.8
1.2
1.6
2.0
Case temperature Tc
(°C)
Drain-source voltage
V
DS
(V)
Capacitance – V
DS
5
10000
Ciss
V
th
– Tc
Common source
VDS
=
10 V
ID
=
1 mA
Pulse test
V
th
(V)
Gate threshold voltage
4
(pF)
3000
Capacitance C
3
1000
Coss
300
Common source
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
0.3
1
3
10
30
Crss
2
1
100
30
0.1
100
0
−80
−40
0
40
80
120
160
Drain-source voltage
V
DS
(V)
Case temperature Tc
(°C)
P
D
– Tc
250
200
Dynamic Input/Output
Characteristics
20
Common source
ID
=
30 A
Tc
=
25°C
Pulse test
15
80
VDD
=
40 V
100
160
Drain power dissipation P
D
(W)
V
DS
(V)
200
VDS
150
Drain-source voltage
10
100
50
VGS
5
50
0
0
40
80
120
160
200
0
0
40
80
120
160
0
200
Case temperature Tc
(°C)
Total gate charge Q
g
(nC)
4
2009-09-29
Gate-source voltage
150
V
GS
(V)
2SK3176
r
th
– t
w
3
Normalized transient thermal impedance
r
th
/R
th
(ch-c)
1
Duty
=
0.5
0.5
0.3
0.2
0.1
0.1
0.05
0.03
0.05
0.02
Single pulse
0.01
0.01
0.005
0.003
10
μ
100
μ
1m
10 m
100 m
PDM
t
T
Duty
=
t/T
Rth (ch-c)
=
0.833°C/W
1
10
Pulse width
t
w
(s)
Safe Operating Area
300
ID max (pulse)*
1000
E
AS
– T
ch
E
AS
(mJ)
Avalanche energy
100
800
Drain current I
D
(A)
100
μs*
50
30
1 ms*
ID max (continuous)
600
10
5
3
400
DC operation
Tc
=
25°C
200
1
0.5
*:
Single nonrepetitive
pulse Tc
=
25°C
linearly with increase in
temperature.
0.1
1
3
5
10
30
VDSS max
50
100
300 500
0
25
50
75
100
125
150
Channel temperature (initial) T
ch
(°C)
0.3 Curves must be derated
15 V
−15
V
B
VDSS
I
AR
V
DD
V
DS
Wave form
Drain-source voltage
V
DS
(V)
Test circuit
R
G
=
25
Ω
V
DD
=
50 V, L
=
1.66 mH
⎞
1
2
⎛
B
VDSS
⎟
Ε
AS
=
·L·I ·
⎜
⎜
B
2
−
V
DD
⎟
⎝
VDSS
⎠
5
2009-09-29
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