DMN53D0U
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V
(BR)DSS
50V
R
DS(ON)
2Ω @ V
GS
= 5V
2.5Ω @ V
GS
= 2.5V
I
D
T
A
= +25°C
300 mA
200 mA
Features and Benefits
•
•
•
•
•
•
•
•
N-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
•
•
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
•
•
•
•
•
•
SOT23
D
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
UL
ESD protected
Top View
G
S
Top View
Equivalent Circuit
Ordering Information
Part Number
DMN53D0U-7
DMN53D0U-13
Notes:
(Note 4)
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Chengdu A/T Site
Date Code Key
Year
Code
Month
Code
Shanghai A/T Site
53D = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or
Y
= Year (ex: B = 2014)
M = Month (ex: 9 = September)
2014
B
Jan
1
Feb
2
2015
C
Mar
3
Apr
4
2016
D
May
5
Jun
6
2017
E
Jul
7
2018
F
Aug
8
Sep
9
2019
G
Oct
O
Nov
N
2020
H
Dec
D
May 2014
© Diodes Incorporated
DMN53D0U
Document number: DS37098 Rev. 2 - 2
1 of 6
www.diodes.com
DMN53D0U
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Continuous
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
50
±12
300
500
Unit
V
V
mA
NEW PRODUCT
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
520
246
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
50
⎯
⎯
0.4
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
37.1
8.4
4.0
0.6
0.1
0.1
2.1
2.8
21
14
Max
⎯
1
±10
1.0
2.0
2.5
3.0
1.4
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
µA
µA
V
Ω
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 50V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 5.0V, I
D
= 50mA
V
GS
= 2.5V, I
D
= 50mA
V
GS
= 1.8V, I
D
= 50mA
V
GS
= 0V, I
S
=115mA
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
V
DD
= 30V, V
GS
= 10V,
R
G
= 25Ω, I
D
= 200mA
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMN53D0U
Document number: DS37098 Rev. 2 - 2
2 of 6
www.diodes.com
May 2014
© Diodes Incorporated
DMN53D0U
2.0
V
GS
= 10V
V
GS
= 3.0V
V
GS
= 3.5V
1.5
V
DS
= 5.0V
1.2
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
1.5
V
GS
= 4.0V
0.9
1.0
V
GS
= 2.5V
0.6
T
A
= 150°C
NEW PRODUCT
0.5
V
GS
= 1.8V
V
GS
= 2.0V
0.3
V
GS
= 1.5V
T
A
= 85°C
T
A
= 125°C
T
A
= 25°C
T
A
= -55°C
0.0
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
2.5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
8
7
6
5
4
3
2
0
0
0.5
1
1.5
2
2.5
3
3.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
4
2
V
GS
= 1.8V
1.5
V
GS
= 2.5V
I
D
= 50mA
1
V
GS
= 5V
0.5
1
0
0
2
4
6
8
10 12 14 16 18
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
20
0
0.01
0.1
1
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
10
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
3
V
GS
= 4.5V
2.4
2.2
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
V
GS
= 2.5V
I
D
= 100mA
V
GS
= 5V
I
D
= 500mA
2.5
T
A
= 150°C
2
T
A
= 125°C
1.5
T
A
= 85°C
1
T
A
= 25°C
T
A
= -55°C
0.5
0
0
0.6
0.9
1.2
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
0.3
1.5
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6 On-Resistance Variation with Temperature
DMN53D0U
Document number: DS37098 Rev. 2 - 2
3 of 6
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May 2014
© Diodes Incorporated
DMN53D0U
2
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
1.8
1.5
1.2
0.9
I
D
= 250µA
I
D
= 1mA
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 7 On-Resistance Variation with Temperature
V
GS
= 5V
I
D
= 500mA
V
GS
= 2.5V
I
D
= 100mA
0.6
0.3
0
NEW PRODUCT
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
-50
1
f = 1MHz
I
S
, SOURCE CURRENT (A)
0.8
0.6
T
A
= 150°C
T
A
= 25°C
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
T
A
= 125°C
C
oss
0.4
T
A
= 85°C
T
A
= -55°C
C
rss
0.2
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
0
5
10
15
20
25
30
35
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
40
10
V
GS
GATE THRESHOLD VOLTAGE (V)
8
6
V
DS
= 10V
I
D
= 250mA
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
1.4
DMN53D0U
Document number: DS37098 Rev. 2 - 2
4 of 6
www.diodes.com
May 2014
© Diodes Incorporated
DMN53D0U
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
H
J
K
A ll 7 °
G A U G E P L A N E
0 . 2 5
K 1
a
A
M
L
L 1
NEW PRODUCT
C
B
D
F
G
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
8°
α
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
X
E
DMN53D0U
Document number: DS37098 Rev. 2 - 2
5 of 6
www.diodes.com
May 2014
© Diodes Incorporated
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