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BSC100N03MS-G

Description
MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M
Categorysemiconductor    Discrete semiconductor   
File Size464KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSC100N03MS-G Overview

MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M

BSC100N03MS-G Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTDSON-8
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current44 A
Rds On - Drain-Source Resistance8.3 mOhms
Vgs th - Gate-Source Threshold Voltage1 V
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge23 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Pd - Power Dissipation30 W
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Height1.27 mm
Length5.9 mm
Transistor Type1 N-Channel
Width5.15 mm
Forward Transconductance - Min27 S
Fall Time5.4 ns
Rise Time4.8 ns
Factory Pack Quantity5000
Typical Turn-Off Delay Time8 ns
Typical Turn-On Delay Time8.5 ns
BSC100N03MS G
OptiMOS™3
M-Series Power-MOSFET
Features
• Optimized for 5V driver application (Notebook, VGA, POL)
• Low FOM
SW
for High Frequency SMPS
• 100% avalanche tested
• N-channel
• Very low on-resistance
R
DS(on)
@
V
GS
=4.5 V
• Excellent gate charge x
R
DS(on)
product (FOM)
• Qualified according to JEDEC
1)
for target applications
• Superior thermal resistance
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
BSC100N03MS G
Package
PG-TDSON-8
Marking
100N03MS
Product Summary
V
DS
R
DS(on),max
V
GS
=10 V
V
GS
=4.5 V
I
D
30
10
12
44
PG-TDSON-8
A
V
mW
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=4.5 V,
T
C
=25 °C
V
GS
=4.5 V,
T
C
=100 °C
V
GS
=4.5 V,
T
A
=25 °C,
R
thJA
=50 K/W
2)
Pulsed drain current
3)
Avalanche current, single pulse
4)
Avalanche energy, single pulse
Gate source voltage
1)
Value
44
28
41
25
Unit
A
12
176
40
10
±20
mJ
V
I
D,pulse
I
AS
E
AS
V
GS
T
C
=25 °C
T
C
=25 °C
I
D
=30 A,
R
GS
=25
W
J-STD20 and JESD22
Rev. 2.1
page 1
2013-05-21

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Description MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M
Configuration Single SINGLE WITH BUILT-IN DIODE
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