BUZ73-H3046 datasheet, PDF - EEWORLD Datasheet

BUZ73-H3046: DescriptionMOSFET N-Ch 200V 7A I2PAK-3; Categorysemiconductor Discrete semiconductor; File Size626KB，18 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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MOSFET N-Ch 200V 7A I2PAK-3

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Infineon
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-220-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	200 V
Id - Continuous Drain Current	7 A
Rds On - Drain-Source Resistance	400 mOhms
Vgs - Gate-Source Voltage	20 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Pd - Power Dissipation	40 W
Packaging	Tube
Height	15.65 mm
Length	10 mm
Transistor Type	1 N-Channel
Width	4.4 mm
Fall Time	30 nS
Rise Time	40 nS
Factory Pack Quantity	500
Typical Turn-Off Delay Time	55 nS
Unit Weight	0.084199 oz

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