BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
Rev. 01 — 10 January 2006
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1:
Typical performance
T
case
= 25
°
C; in a common source class-AB test circuit; I
Dq
= 900 mA; typical values
Mode of operation f
(MHz)
2-carrier
W-CDMA
[1]
[1]
V
DS
(V)
28
P
L
(W)
G
p
(dB)
η
D
(%)
26
IMD3
(dBc)
−37
ACPR
(dBc)
−41
f
1
= 2135; f
2
= 2145
25 (AV) 13.5
10 MHz carrier spacing PAR 7 dB at 0.01 % probability on CCDF, 3GPP test model 1, 1 to 64 DPCH.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s
Typical 2-Carrier W-CDMA performance at a supply voltage of 28 V and an I
Dq
of
900 mA:
x
Load power = 25 W (AV)
x
Gain = 13.5 dB (typ)
x
Efficiency = 26 % (typ)
x
ACPR =
−41
dBc (typ)
x
IMD3 =
−37
dBc (typ)
s
Easy power control
s
Integrated ESD protection
s
Excellent ruggedness > 10 : 1 VSWR at 100 W CW
s
High efficiency
s
High peak power capability (> 150 W)
s
Excellent thermal stability
s
Designed for broadband operation (2000 MHz to 2200 MHz)
s
Internally matched for ease of use
Philips Semiconductors
BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
1.3 Applications
s
RF power amplifiers for W-CDMA base stations and multicarrier applications in the
2000 MHz to 2200 MHz frequency range.
2. Pinning information
Table 2:
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Symbol
BLF4G22-100 (SOT502A)
1
3
2
2
3
sym039
1
BLF4G22S-100 (SOT502B)
1
2
3
drain
gate
source
[1]
1
3
2
2
1
3
sym039
[1]
Connected to flange
3. Ordering information
Table 3:
Ordering information
Package
Name
BLF4G22-100
BLF4G22S-100
-
-
Description
flanged LDMOST ceramic package; 2 mounting
holes; 2 leads
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502A
SOT502B
Type number
4. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
−0.5
-
−65
-
Max
65
+15
12
+150
200
Unit
V
V
A
°C
°C
9397 750 14338
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
2 of 14
Philips Semiconductors
BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
5. Thermal characteristics
Table 5:
Symbol
R
th(j-case)
Thermal characteristics
Parameter
thermal resistance from
junction to case
Conditions
T
case
= 80
°C;
P
L
= 25 W;
2-carrier W-CDMA
Min
-
Typ
0.76
Max
0.85
Unit
K/W
6. Characteristics
Table 6:
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
rs
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
transfer conductance
Conditions
V
DS
= 10 V; I
D
= 180 mA
V
DS
= 28 V; I
D
= 900 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 6 V;
V
DS
= 10 V
V
GS
= 15 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 10 A
Min
65
2.5
2.7
-
27
-
-
-
-
Typ
-
3.1
3.2
-
30
-
9.0
0.09
2.5
Max
-
3.5
3.7
3
-
300
-
-
-
Unit
V
V
V
µA
A
nA
S
Ω
pF
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 0.9 mA
drain-source on-state resistance V
GS
= V
GS(th)
+ 6 V;
I
D
= 6 A
feedback capacitance
V
GS
= 0 V; V
DS
= 28 V;
f = 1 MHz
7. Application information
Table 7:
Application information
Mode of operation: 2-Carrier W-CDMA, PAR 7 dB at 0.01 % probability on CCDF, 3GPP test
model 1, 1-64 DPCH, f
1
= 2112.5 MHz, f
2
= 2122.5 MHz, f
3
= 2157.5 MHz, f
4
= 2167.5 MHz.
Symbol
G
p
IRL
η
D
IMD3
ACPR
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio
Conditions
P
L(AV)
= 25 W
P
L(AV)
= 25 W
P
L(AV)
= 25 W
P
L(AV)
= 25 W
Min
12.5
9
24
-
-
Typ
13.5
15
26
−37
−41
Max
-
-
-
−35
−39
Unit
dB
dB
%
dBc
dBc
third order intermodulation distortion P
L(AV)
= 25 W
7.1 Ruggedness in class-AB operation
The BLF4G22-100/BLF4G22S-100 are capable of withstanding a load mismatch
corresponding to VSWR > 10 : 1 through all phases under the following conditions:
V
DS
= 28 V; I
Dq
= 900 mA; P
L
= 100 W (CW).
9397 750 14338
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
3 of 14
Philips Semiconductors
BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
40
η
D
(%)
G
p
(dB)
30
001aac270
−15
ACPR,
IMD3
(dBc)
−25
η
D
IMD3
20
ACPR
−35
G
p
10
−45
0
0
10
20
30
−55
40
50
P
L(AV)
(W)
(1) 2-carrier W-CDMA performance; V
DS
= 28 V, I
Dq
= 900 mA; f
1
= 2135 MHz and f
2
= 2145 MHz;
PAR = 7 dB at 0.01 % on CCDF; 3GPP TM1, 64 DPCH.
Fig 1. 2-carrier W-CDMA ACPR, IMD3, power gain and drain efficiency as functions of
average load power; typical values
Table 8:
Typical impedance values
V
DS
= 28 V; I
Dq
= 900 mA; P
L
= 25 W (AV); T
case
= 25
°
C.
Frequency
(MHz)
2110
2140
2170
Table 9:
Code
[1]
A
B
C
D
E
[1]
[2]
Z
S
(Ω)
2.2 + j4.8
2.2 + j4.6
2.2 + j4.5
RF gain grouping
Gain (dB)
[2]
Min
12.5
13.0
13.5
14.0
14.5
Z
L
(Ω)
1.5
−
j2.6
1.5
−
j2.4
1.4
−
j2.2
Max
13.0
13.5
14.0
14.5
-
0.2 dB overlap is allowed for measurement reproducibility.
For 2-carrier W-CDMA at f
1
= 2157 MHz, f
2
= 2167.5 MHz.
9397 750 14338
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
4 of 14
Philips Semiconductors
BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
16
G
p
(dB)
14
001aac271
−20
IMD3
(dBc)
001aac272
(1)
(2)
(3)
(4)
−30
(5)
(1)
−40
(4)
(5)
−50
(2)
12
−60
(3)
10
1
10
10
2
P
L(PEP)
(W)
10
3
−70
1
10
10
2
P
L(PEP)
(W)
10
3
(1) I
Dq
= 600 mA
(2) I
Dq
= 750 mA
(3) I
Dq
= 900 mA
(4) I
Dq
= 1050 mA
(5) I
Dq
= 1200 mA
Two-tone measurement;
V
DS
= 28 V; f
1
= 2140.0 MHz; f
2
= 2140.1 MHz
(1) I
Dq
= 600 mA
(2) I
Dq
= 750 mA
(3) I
Dq
= 900 mA
(4) I
Dq
= 1050 mA
(5) I
Dq
= 1200 mA
Two-tone measurement;
V
DS
= 28 V; f
1
= 2140.0 MHz; f
2
= 2140.1 MHz
Fig 2. Power gain as a function of peak envelope load
power; typical values
001aac273
Fig 3. Third order intermodulation distortion as a
function of peak envelope power; typical values
10
11
t
50%
(hr)
10
10
001aac274
16
G
p
(dB)
14
10
9
P
1dB
= 135 W (= 52.1 dBm)
12
P
3dB
= 161 W (= 51.3 dBm)
10
8
10
7
10
0
40
80
120
160
200
P
L
(W)
10
6
100
140
180
220
T
j
(°C)
260
t
on
= 8
µs
t
off
= 1 ms
Fig 4. Pulsed peak power capability; typical values
Fig 5. t
50%
failures due to electromigration as a
function of junction temperature
9397 750 14338
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
5 of 14
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