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DMN2041LSD-13

Description
MOSFET MOSFET DUAL N-CHAN ENHANCE MODE
CategoryDiscrete semiconductor    The transistor   
File Size232KB,6 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
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DMN2041LSD-13 Overview

MOSFET MOSFET DUAL N-CHAN ENHANCE MODE

DMN2041LSD-13 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerDiodes Incorporated
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time15 weeks
Samacsys DescriptionDiodes Inc DMN2041LSD-13 Dual N-channel MOSFET Transistor, 7.63 A, 20 V, 8-Pin SOIC
Other featuresHIGH RELIABILITY
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)7.6 A
Maximum drain current (ID)7.63 A
Maximum drain-source on-resistance0.028 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1.16 W
Maximum pulsed drain current (IDM)30 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
DMN2041LSD
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
28mΩ @ V
GS
= 4.5V
I
D
max
T
A
= +25°C
7.63A
4.35A
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
20V
41mΩ @ V
GS
= 2.5V
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
SO-8
Applications
Power Management Functions
DC-DC Converters
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.072 grams (approximate)
D1
S1
G1
S2
G2
TOP VIEW
TOP VIEW
Internal Schematic
D2
D1
D1
D2
D2
G1
S1
N-Channel MOSFET
G2
S2
N-Channel MOSFET
Ordering Information
(Note 4)
Part Number
DMN2041LSD-13
Notes:
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
N2041LD
YY WW
1
4
1
N2041LD
YY WW
4
= Manufacturer’s Marking
N2041LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Chengdu A/T Site
Shanghai A/T Site
DMN2041LSD
Document number: DS31964 Rev. 3 - 2
1 of 6
www.diodes.com
February 2014
© Diodes Incorporated
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