The DG9431 is a single-pole/double-throw monolithic CMOS
analog device designed for high performance switching of
analog signals. Combining low power, high speed
(t
ON
: 35 ns, t
OFF
: 20 ns), low on-resistance (r
DS(on)
: 20
Ω)
and small physical size (TSOP-6), the DG9431 is ideal for
portable and battery powered applications requiring high
performance and efficient use of board space.
The DG9431 is built on Vishay Siliconix’s low voltage
BCD-15 process. Minimum ESD protection, per Method
3015.7, is 2000 V. An epitaxial layer prevents latchup.
Break-before -make is guaranteed for DG9431.
Each switch conducts equally well in both directions when
on, and blocks up to the power supply level when off.
As a committed partner to the community and the
environment, Vishay Siliconix manufactures this product
with the lead (Pb)-free device terminations. For analog
switching products manufactured with 100 % matte tin
device terminations, the lead (Pb)-free “-E3” suffix is being
used as a designator.
FEATURES
•
•
•
•
•
•
•
•
•
•
Low Voltage Operation (+ 2.7 to + 5 V)
Low On-Resistance - r
DS(on)
: 20
Ω
Fast Switching - t
ON
: 35 ns, t
OFF
: 20 ns
Low Leakage - I
COM(on)
: 200-pA max
Low Charge Injection - Q
INJ
: 1 pC
Low Power Consumption
TTL/CMOS Compatible
ESD Protection > 2000 V (Method 3015.7)
Available in TSOP-6 and SOIC-8
Lead (Pb)-Free Version is RoHS Compliant
Pb-free
Available
RoHS*
COMPLIANT
BENEFITS
•
•
•
•
Reduced Power Consumption
Simple Logic Interface
High Accuracy
Reduce Board Space (TSOP-6)
APPLICATIONS
•
•
•
•
•
•
•
Battery Operated Systems
Portable Test Equipment
Sample and Hold Circuits
Cellular Phones
Communication Systems
Military Radio
PBX, PABX Guidance and Control Systems
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TSOP-6
IN
V+
GND
1
2
3
Top View
6
5
4
NO
COM
NC
TRUTH TABLE
Logic
0
1
Logic "0"
≤
0.8 V
Logic "1"
≥
2.4 V
NC
ON
OFF
NO
OFF
ON
SOIC-8
NO
COM
NC
GND
1
2
3
4
Top View
8
7
6
5
V+
IN
*
*
ORDERING INFORMATION
Temp Range
Package
TSOP-6
- 40 to 85 °C
SOIC-8
Part Number
DG9431DV-T1
DG9431DV-T1-E3 (Lead (Pb)-free)
DG9431DY-T1
DG9431DY-T1-E3 (Lead (Pb)-free)
*Not Connected
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 70831
S-71009–Rev. D, 14-May-07
www.vishay.com
1
DG9431
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Reference V+ to GND
IN, COM, NC, NO
a
Continuous Current (Any Terminal)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
ESD (Method 3015.7)
Storage Temperature (D Suffix)
Power Dissipation (Packages)
b
8-Pin Narrow Body SOIC
c
Limit
- 0.3 to + 13
- 0.3 to (V+ + 0.3)
± 20
± 40
> 2000
- 65 to 125
400
Unit
V
mA
V
°C
mW
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/°C above 75 °C.
SPECIFICATIONS (V+ = 3 V)
Test Conditions
Unless Otherwise Specified
V+ = 3 V, ± 10 %, V
IN
= 0.8 or 2.4 V
e
D Suffix
- 40 to 85 °C
Temp
a
Full
V
NO
or V
NC
= 1.5 V, V+ = 2.7 V
I
COM
= 5 mA
V
NO
or V
NC
= 1.5 V
V
NO
or V
NC
= 1 and 2 V
V
NO
or V
NC
= 1 V/2 V, V
COM
= 2 V/1 V
V
COM
= 1 V/2 V, V
NO
or V
NC
= 2 V/1 V
V
COM
= V
NO
or V
NC
= 1 V/2 V
Room
Full
Room
Room
Room
Full
Room
Full
Room
Full
Full
Room
Full
V
NO
or V
NC
= 1.5 V
Room
Full
Room
C
L
= 1 nF, V
gen
= 0 V, R
gen
= 0
Ω
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz
f = 1 MHz
Room
Room
Room
Room
2.7
V+ = 3.3 V, V
IN
= 0 or 3.3 V
3
- 100
- 5000
- 100
- 5000
- 200
- 10000
Min
c
0
30
0.4
4
5
5
10
Typ
b
Max
c
3
50
80
2
8
100
5000
100
5000
200
10000
µA
120
200
50
120
5
ns
pA
Ω
Unit
V
Parameter
Analog Switch
Analog Signal Range
d
Drain-Source On–Resistance
r
DS(on)
Match
d
r
DS(on)
Flatness
f
NO or NC Off Leakage
Current
g
COM Off Leakage Current
g
Channel-On Leakage Current
g
Digital Control
Input Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection
Off-Isolation
Source Off Capacitance
Channel-On Capacitance
Power Supply
Power Supply Range
Power Supply Current
Symbol
V
ANALOG
r
DS(on)
Δr
DS(on)
r
DS(on)
Flatness
I
NO/NC(off)
I
COM(off)
I
COM(on)
I
INL
or I
INH
t
ON
t
OFF
t
d
Q
INJ
OIRR
C
S(off)
C
D(on)
V+
I+
1
50
20
20
1
- 74
7
32
12
1
pC
dB
pF
V
µA
www.vishay.com
2
Document Number: 70831
S-71009–Rev. D, 14-May-07
DG9431
Vishay Siliconix
SPECIFICATIONS (V+ = 5 V)
Test Conditions
Unless Otherwise Specified
V+ = 5 V, ± 10 %, V
IN
= 0.8 or 2.4 V
e
D Suffix
- 40 to 85 °C
Temp
a
Full
V
NO
or V
NC
= 3.5 V, V+ = 4.5 V
I
COM
= 5 mA
V
NO
or V
NC
= 1.5 V
V
NO
or V
NC
= 1, 2 and 3 V
V
NO
or V
NC
= 1 V/4 V, V
COM
= 4 V/1 V
V
COM
= 1 V/4 V, V
NO
or V
NC
= 4 V/1 V
V
COM
= V
NO
or V
NC
= 1 V/4 V
Room
Full
Room
Room
Room
Full
Room
Full
Room
Full
Full
Room
Full
V
NO
or V
NC
= 3.0 V
Room
Full
Room
C
L
= 1 nF, V
gen
= 0 V, R
gen
= 0
Ω
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz
f = 1 MHz
Room
Room
Room
Room
2.7
V+ = 5.5 V, V
IN
= 0 or 5.5 V
3
- 100
- 5000
- 100
- 5000
- 200
- 10000
1
35
20
10
2
- 74
-7
32
12
1
5
pC
dB
pF
75
150
50
100
ns
Min
c
0
20
0.4
2
10
10
Typ
b
Max
c
5
30
50
2
6
100
5000
100
5000
200
10000
µA
pA
Ω
Unit
V
Parameter
Analog Switch
Analog Signal Range
d
Drain-Source On–Resistance
r
DS(on)
Match
d
r
DS(on)
Flatness
f
NO or NC Off Leakage Current
COM Off Leakage Current
Channel-On Leakage Current
Digital Control
Input Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection
Off-Isolation
NC and NO Capacitance
Channel-On Capacitance
Power Supply
Power Supply Range
Power Supply Current
Symbol
V
ANALOG
r
DS(on)
Δr
DS(on)
r
DS(on)
Flatness
I
NO/NC(off)
I
COM(off)
I
COM(on)
I
INL
or I
INH
t
ON
t
OFF
t
d
Q
INJ
OIRR
C
(off)
C
D(on)
V+
I+
V
µA
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. V
IN
= input voltage to perform proper function.
f. Difference of min and max values.
g. Guraranteed by 5-V leakage testing, not production tested.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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